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1. 发明授权

US08823176B2 Discontinuous/non-uniform metal cap structure and process for interconnect integration 有权
标题翻译：不连续/不均匀的金属帽结构和互连整合的过程
公开(公告)号：US08823176B2
公开(公告)日：2014-09-02
申请号：US12247632
申请日：2008-10-08
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L29/40 , H01L23/532 , H01L21/768 , H01L21/02
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, e.g., exists as nuclei or islands on the surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.
摘要翻译：提供一种互连结构，其包括至少存在于嵌入在互连电介质材料中的至少一种导电材料的上表面的至少一部分上的含贵金属的盖。在一个实施方案中，含贵金属的帽是不连续的，例如以至少一种导电材料的表面上的核或岛状存在。在另一个实施方案中，含贵金属的盖在至少一种导电材料的表面上具有不均匀的厚度。

2. 发明申请

US20120329271A1 DISCONTINUOUS/NON-UNIFORM METAL CAP STRUCTURE AND PROCESS FOR INTERCONNECT INTEGRATION 审中-公开
标题翻译：不连续/非均匀金属盖结构和互连整合的过程
公开(公告)号：US20120329271A1
公开(公告)日：2012-12-27
申请号：US13600773
申请日：2012-08-31
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.
摘要翻译：提供一种制造互连结构的方法，其包括提供具有约3.0或更小介电常数的介电材料和嵌入其中的至少一种导电材料，所述至少一种导电材料具有与上表面共面的上表面的介电材料; 并且在所述至少一种导电材料的上表面上直接形成含贵金属的帽，其中所述贵金属帽是不连续的或不均匀的。

3. 发明授权

US08889546B2 Discontinuous/non-uniform metal cap structure and process for interconnect integration 有权
标题翻译：不连续/不均匀的金属帽结构和互连整合的过程
公开(公告)号：US08889546B2
公开(公告)日：2014-11-18
申请号：US13600773
申请日：2012-08-31
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L21/4763 , H01L23/532 , H01L23/528 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.
摘要翻译：提供一种制造互连结构的方法，其包括提供具有约3.0或更小介电常数的介电材料和嵌入其中的至少一种导电材料，所述至少一种导电材料具有与上表面共面的上表面的介电材料; 并且在所述至少一种导电材料的上表面上直接形成含贵金属的帽，其中所述贵金属帽是不连续的或不均匀的。

4. 发明申请

US20100084767A1 DISCONTINUOUS/NON-UNIFORM METAL CAP STRUCTURE AND PROCESS FOR INTERCONNECT INTEGRATION 有权
标题翻译：不连续/非均匀金属盖结构和互连整合的过程
公开(公告)号：US20100084767A1
公开(公告)日：2010-04-08
申请号：US12247632
申请日：2008-10-08
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a noble metal-containing cap that is present at least on some portion of an upper surface of at least one conductive material that is embedded within an interconnect dielectric material is provided. In one embodiment, the noble metal-containing cap is discontinuous, e.g., exists as nuclei or islands on the surface of the at least one conductive material. In another embodiment, the noble metal-containing cap has a non-uniform thickness across the surface of the at least one conductive material.
摘要翻译：提供一种互连结构，其包括至少存在于嵌入在互连电介质材料中的至少一种导电材料的上表面的至少一部分上的含贵金属的盖。在一个实施方案中，含贵金属的帽是不连续的，例如以至少一种导电材料的表面上的核或岛状存在。在另一个实施方案中，含贵金属的盖在至少一种导电材料的表面上具有不均匀的厚度。

5. 发明申请

US20090278229A1 EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS 有权
标题翻译：电气保险丝应用的有效互连结构
公开(公告)号：US20090278229A1
公开(公告)日：2009-11-12
申请号：US12119125
申请日：2008-05-12
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
IPC分类号： H01L23/525 , H01L21/768
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L21/76844 , H01L21/76888 , H01L23/5226 , H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.
摘要翻译：提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。电介质覆盖层位于电介质材料和导电材料的顶部。在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

6. 发明授权

US07893520B2 Efficient interconnect structure for electrical fuse applications 有权
标题翻译：电熔丝应用的高效互连结构
公开(公告)号：US07893520B2
公开(公告)日：2011-02-22
申请号：US12119125
申请日：2008-05-12
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
IPC分类号： H01L29/00
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L21/76844 , H01L21/76888 , H01L23/5226 , H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.
摘要翻译：提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。电介质覆盖层位于电介质材料和导电材料的顶部。在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

7. 发明申请

US20110092031A1 EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS 有权
标题翻译：电气保险丝应用的有效互连结构
公开(公告)号：US20110092031A1
公开(公告)日：2011-04-21
申请号：US12976445
申请日：2010-12-22
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
IPC分类号： H01L21/283
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L21/76844 , H01L21/76888 , H01L23/5226 , H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.
摘要翻译：提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。电介质覆盖层位于电介质材料和导电材料的顶部。在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

8. 发明授权

US08133767B2 Efficient interconnect structure for electrical fuse applications 有权
标题翻译：电熔丝应用的高效互连结构
公开(公告)号：US08133767B2
公开(公告)日：2012-03-13
申请号：US12976445
申请日：2010-12-22
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu
IPC分类号： H01L21/82
CPC分类号： H01L23/53295 , H01L21/76805 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L21/76844 , H01L21/76888 , H01L23/5226 , H01L23/5256 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.
摘要翻译：提供了一种半导体结构，其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。互连结构具有高的电迁移率，而与互连结构相比，熔丝结构具有较低的电迁移电阻。熔丝结构包括嵌入在互连电介质内的导电材料，其中导电材料的上表面具有存在于其中的高浓度的氧。电介质覆盖层位于电介质材料和导电材料的顶部。在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。因此，当电流被提供给熔丝结构时，导电材料的电迁移发生，并且随着时间的推移，在引导熔丝元件的导电材料中形成开口。

9. 发明申请

US20130221527A1 METALLIC CAPPED INTERCONNECT STRUCTURE WITH HIGH ELECTROMIGRATION RESISTANCE AND LOW RESISTIVITY 有权
标题翻译：具有高电阻率和低电阻率的金属插接式互连结构
公开(公告)号：US20130221527A1
公开(公告)日：2013-08-29
申请号：US13404875
申请日：2012-02-24
申请人： Chih-Chao Yang , Chao-Kun Hu
发明人： Chih-Chao Yang , Chao-Kun Hu
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53223 , H01L21/76849 , H01L21/76882 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a metallic cap that covers 80 to 99% of the entire surface of an underlying conductive metal feature is provided utilizing a metal reflow process. Laterally extending portions of the conductive metal feature are located on vertical edges of the metallic cap, and each of the laterally extending portions of the conductive metal feature has an uppermost surface that is coplanar with an uppermost surface of the metallic cap.
摘要翻译：使用金属回流工艺来提供包括覆盖下面的导电金属特征的整个表面的80-99％的金属盖的互连结构。导电金属特征的横向延伸部分位于金属盖的垂直边缘上，并且导电金属特征的每个横向延伸部分具有与金属盖的最上表面共面的最上表面。

10. 发明申请

US20120199976A1 INTERCONNECT STRUCTURE HAVING A VIA WITH A VIA GOUGING FEATURE AND DIELECTRIC LINER SIDEWALLS FOR BEOL INTEGRATION 审中-公开
标题翻译：具有威盛特征的绝缘结构和用于BEOL整合的电介质衬里
公开(公告)号：US20120199976A1
公开(公告)日：2012-08-09
申请号：US13448780
申请日：2012-04-17
申请人： Chih-Chao Yang , Chao-Kun Hu
发明人： Chih-Chao Yang , Chao-Kun Hu
IPC分类号： H01L23/532
CPC分类号： H01L21/76808 , H01L21/76805 , H01L21/76831 , H01L21/76835 , H01L2221/1036 , Y10T29/49204
摘要： An interconnect structure including a lower interconnect level with a first dielectric layer having a first conductive material embedded therein; a dielectric capping layer located on the first dielectric layer and some portions of the first conductive material; an upper interconnect level including a second dielectric layer having at least one via opening filled with a second conductive material and at least one overlying line opening filled with the second conductive material disposed therein, wherein the at least one via opening is in contact with the first conductive material in the lower interconnect level by a via gouging feature; a dielectric liner on sidewalls of the at least one via opening; and a first diffusion barrier layer on sidewalls and a bottom of both the at least one via opening and the at least one overlying line opening. A method of forming the interconnect structure is also provided.
摘要翻译：一种互连结构，包括具有嵌入其中的第一导电材料的第一介电层的下部互连电平; 位于所述第一电介质层上的电介质覆盖层和所述第一导电材料的一些部分; 上部互连级别，包括具有填充有第二导电材料的至少一个通孔开口的第二介电层和填充有设置在其中的第二导电材料的至少一个覆盖的线路开口，其中所述至少一个通孔与第一导电材料接触导电材料在下互连级别通过通孔气刨特征; 在所述至少一个通孔开口的侧壁上的电介质衬垫; 以及在所述至少一个通孔开口和所述至少一个覆盖线开口的侧壁和底部上的第一扩散阻挡层。还提供了形成互连结构的方法。

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