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    • 1. 发明授权
    • Semiconductor chip package manufacturing method and structure thereof
    • 半导体芯片封装制造方法及其结构
    • US07790505B2
    • 2010-09-07
    • US11871319
    • 2007-10-12
    • Chian-Chi LinChih-Huang ChangYueh-Lung Lin
    • Chian-Chi LinChih-Huang ChangYueh-Lung Lin
    • H01L21/00
    • H01L27/14618H01L27/14632H01L27/14687H01L2224/02371H01L2924/15311
    • A semiconductor chip package manufacturing method and a structure thereof are provided. The manufacturing method includes: providing a base having an image sensor chip and an encapsulant, in which the image sensor chip has pads and an active area; placing a transparent insulator on the active area; forming an insulation layer on an upper surface of the base; opening a plurality of openings to expose the pads; forming a plurality of through holes penetrating the insulation layer and the encapsulant outside of the image sensor chips; forming a metal layer on surfaces of the insulation layer, the openings, the pads and the through holes, and on a lower surface of the base, so as to extend the pads to the lower surface of the base; patterning the metal layer to expose a top area of the transparent insulator and remove a partial area of the metal layer on the lower surface of the base to form contacts; and sawing the base to form a package structure containing a single image sensor chip.
    • 提供半导体芯片封装的制造方法及其结构。 该制造方法包括:提供具有图像传感器芯片和密封剂的基座,其中图像传感器芯片具有焊盘和有源区域; 在有源区域放置透明绝缘体; 在所述基座的上表面上形成绝缘层; 打开多个开口以露出所述垫; 在所述图像传感器芯片外部形成穿过所述绝缘层和所述密封剂的多个通孔; 在绝缘层,开口,焊盘和通孔的表面上以及在基底的下表面上形成金属层,以将焊盘延伸到基座的下表面; 图案化金属层以暴露透明绝缘体的顶部区域并去除基底的下表面上的金属层的部分区域以形成接触; 并锯切基底以形成包含单个图像传感器芯片的封装结构。
    • 6. 发明申请
    • Three-dimensional package and method of making the same
    • 三维包装及其制作方法
    • US20070172986A1
    • 2007-07-26
    • US11645177
    • 2006-12-26
    • Min-Lung HuangWei-Chung WangPo-Jen ChengKuo-Chung YeeChing-Huei SuJian-Wen LoChian-Chi Lin
    • Min-Lung HuangWei-Chung WangPo-Jen ChengKuo-Chung YeeChing-Huei SuJian-Wen LoChian-Chi Lin
    • H01L21/00
    • H01L25/0657H01L21/76898H01L25/50H01L2224/48145H01L2225/06506H01L2225/06524H01L2225/06541H01L2924/01019H01L2924/01078H01L2924/00012
    • The present invention relates to a three-dimensional package and a method of making the same. The three-dimensional package structure comprises a first wafer, at least one first hole, a first isolation layer, a first conductive layer, a first metal, a first solder, a second wafer, at least one second hole, a second isolation layer, a second conductive layer, a second metal and a second space. The first wafer has at least one first pad and a first protection layer exposing the first pad. The first hole penetrates the first wafer. The first isolation layer is disposed on the side wall of the first hole. The lower end of the first conductive layer extends below the surface of the first wafer. The first metal is disposed in the first hole, and is electrically connected to the first pad via the first conductive layer. The first solder is disposed on the first metal in the first hole, wherein the melting point of the first solder is lower than that of the first metal. The second wafer has at least one second pad and a second protection layer exposing the second pad. The second hole penetrates the second wafer. The second isolation layer is disposed on the side wall of the second hole. The lower end of the second conductive layer extends below the surface of the second wafer and contacts the upper end of the first solder. The second metal is disposed in the second hole and is electrically connected to the second pad via the second conductive layer. The second space is disposed on the second metal in the second hole.
    • 本发明涉及三维包装及其制造方法。 三维封装结构包括第一晶片,至少一个第一孔,第一隔离层,第一导电层,第一金属,第一焊料,第二晶片,至少一个第二孔,第二隔离层, 第二导电层,第二金属和第二空间。 第一晶片具有至少一个第一焊盘和暴露第一焊盘的第一保护层。 第一个孔穿透第一个晶片。 第一隔离层设置在第一孔的侧壁上。 第一导电层的下端延伸到第一晶片的表面下方。 第一金属设置在第一孔中,并且经由第一导电层电连接到第一焊盘。 第一焊料设置在第一孔中的第一金属上,其中第一焊料的熔点低于第一焊料的熔点。 第二晶片具有至少一个第二焊盘和暴露第二焊盘的第二保护层。 第二孔穿透第二晶片。 第二隔离层设置在第二孔的侧壁上。 第二导电层的下端延伸到第二晶片的表面下方并接触第一焊料的上端。 第二金属设置在第二孔中,并通过第二导电层与第二焊盘电连接。 第二空间设置在第二孔中的第二金属上。