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1. 发明申请

US20090203282A1 Gate controlled field emission triode and process for fabricating the same 有权
标题翻译：门控场发射三极管及其制造方法
公开(公告)号：US20090203282A1
公开(公告)日：2009-08-13
申请号：US12386161
申请日：2009-04-14
申请人： Tseung-Yuan Tseng , Chia-Ying Lee , Seu-Yi Li , Pang Lin , Tseung-Yuen Tseng
发明人： Tseung-Yuan Tseng , Chia-Ying Lee , Seu-Yi Li , Pang Lin , Tseung-Yuen Tseng
IPC分类号： H01J9/00
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.
摘要翻译：本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法，其与半导体制造工艺相关，并且获得了栅极控制的场致发射三极管。该方法包括提供半导体衬底，分别在半导体衬底上沉积电介质层和导电层，限定电介质层和导电层上的发射极阵列的位置，将沉积超薄ZnO膜作为接种层衬底，通过使用水热法生长ZnO纳米线作为发射极阵列，并蚀刻除发射极阵列之外的区域，然后获得栅极控制的场致发射三极管。

2. 发明授权

US08267734B2 Gate controlled field emission triode and process for fabricating the same 有权
标题翻译：门控场发射三极管及其制造方法
公开(公告)号：US08267734B2
公开(公告)日：2012-09-18
申请号：US12386161
申请日：2009-04-14
申请人： Chia-Ying Lee , Seu-Yi Li , Pang Lin , Tseung-Yuan Tseng
发明人： Chia-Ying Lee , Seu-Yi Li , Pang Lin , Tseung-Yuan Tseng
IPC分类号： H01J9/00
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.
摘要翻译：本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法，其与半导体制造工艺相关，并且获得了栅极控制的场致发射三极管。该方法包括提供半导体衬底，分别在半导体衬底上沉积电介质层和导电层，限定电介质层和导电层上的发射极阵列的位置，将沉积超薄ZnO膜作为接种层衬底，通过使用水热法生长ZnO纳米线作为发射极阵列，并蚀刻除发射极阵列之外的区域，然后获得栅极控制的场致发射三极管。

3. 发明申请

US20070284573A1 Gate controlled field emission triode and process for fabricating the same 失效
标题翻译：门控场发射三极管及其制造方法
公开(公告)号：US20070284573A1
公开(公告)日：2007-12-13
申请号：US11642271
申请日：2006-12-20
申请人： Tseung-Yuen Tseng , Chia-Ying Lee , Seu-Yi Li , Pang Lin
发明人： Tseung-Yuen Tseng , Chia-Ying Lee , Seu-Yi Li , Pang Lin
IPC分类号： H01L29/12 , H01L21/00
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.
摘要翻译：本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法，其与半导体制造工艺相关，并且获得了栅极控制的场致发射三极管。该方法包括提供半导体衬底，分别在半导体衬底上沉积电介质层和导电层，限定电介质层和导电层上的发射极阵列的位置，将沉积超薄ZnO膜作为接种层衬底，通过使用水热法生长ZnO纳米线作为发射极阵列，并蚀刻除发射极阵列之外的区域，然后获得栅极控制的场致发射三极管。

4. 发明授权

US07704114B2 Gate controlled field emission triode and process for fabricating the same 失效
标题翻译：门控场发射三极管及其制造方法
公开(公告)号：US07704114B2
公开(公告)日：2010-04-27
申请号：US11642271
申请日：2006-12-20
申请人： Tseung-Yuen Tseng , Chia-Ying Lee , Seu-Yi Li , Pang Lin
发明人： Tseung-Yuen Tseng , Chia-Ying Lee , Seu-Yi Li , Pang Lin
IPC分类号： H01J9/00
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.
摘要翻译：本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法，其与半导体制造工艺相关，并且获得了栅极控制的场致发射三极管。该方法包括提供半导体衬底，分别在半导体衬底上沉积电介质层和导电层，限定电介质层和导电层上的发射极阵列的位置，将沉积超薄ZnO膜作为接种层衬底，通过使用水热法生长ZnO纳米线作为发射极阵列，并蚀刻除发射极阵列之外的区域，然后获得栅极控制的场致发射三极管。

5. 发明申请

US20130280909A1 METAL CUT PROCESS FLOW 有权
标题翻译：金属切割工艺流程
公开(公告)号：US20130280909A1
公开(公告)日：2013-10-24
申请号：US13451605
申请日：2012-04-20
申请人： Yuan-Hsiang Lung , Kuei-Shun Chen , Meng-Wei Chen , Chia-Ying Lee
发明人： Yuan-Hsiang Lung , Kuei-Shun Chen , Meng-Wei Chen , Chia-Ying Lee
IPC分类号： H01L21/306 , G03F1/70
CPC分类号： H01L21/31144 , G03F1/70 , H01L21/76816
摘要： A method for optimizing masks used for forming conductive features and a method for creating the mask features on an IC device are disclosed. An exemplary embodiment includes receiving a design database including a plurality of conductive features. First and second features suitable for joining are identified from the plurality of conductive features. A joined feature corresponding to the first and the second features is characterized. A cut shape configured to separate the first and second features from the joined feature is also characterized. The joined feature is categorized into a first conductive mask, the cut shape is categorized into a cut mask, and a third feature is categorized into a second conductive mask. The categorized shapes and features of the first conductive mask, the second conductive mask, and the cut mask are provided for manufacturing a mask set corresponding to the categorized shapes and features.
摘要翻译：公开了一种用于优化用于形成导电特征的掩模的方法和用于在IC器件上产生掩模特征的方法。示例性实施例包括接收包括多个导电特征的设计数据库。从多个导电特征中识别适合于接合的第一和第二特征。表征与第一和第二特征对应的连接特征。被配置为将第一和第二特征与接合的特征分离的切割形状也被表征。连接的特征被分类为第一导电掩模，切割形状被分为切割掩模，第三特征被分类为第二导电掩模。提供第一导电掩模，第二导电掩模和切割掩模的分类形状和特征，用于制造对应于分类形状和特征的掩模组。

6. 发明授权

US08278842B2 Lamp set 有权
标题翻译：灯套
公开(公告)号：US08278842B2
公开(公告)日：2012-10-02
申请号：US12564455
申请日：2009-09-22
申请人： Chia-Ying Lee , Jian-Ming Peng
发明人： Chia-Ying Lee , Jian-Ming Peng
IPC分类号： H05B41/36
CPC分类号： H05B33/0845 , H05B37/0272
摘要： A lamp set includes a control device and a first lighting device. The control device includes an energy-generating unit for providing an energy distribution. The first lighting device includes a pre-processing unit, a first lighting element, and a controller. The controller is coupled to the pre-processing unit and the first lighting element. The pre-processing unit is used to sense the energy distribution or to receive information included in the energy distribution thus to allow the controller to control luminance of the first lighting element according to the energy distribution.
摘要翻译：灯组包括控制装置和第一照明装置。控制装置包括用于提供能量分布的能量产生单元。第一照明装置包括预处理单元，第一照明元件和控制器。控制器耦合到预处理单元和第一照明元件。预处理单元用于感测能量分布或接收包括在能量分布中的信息，从而允许控制器根据能量分布来控制第一照明元件的亮度。

7. 发明授权

US07944779B2 Multifunction time display device 有权
标题翻译：多功能时间显示装置
公开(公告)号：US07944779B2
公开(公告)日：2011-05-17
申请号：US12566244
申请日：2009-09-24
申请人： Chia-Ying Lee , Yen-Chiu Hsu , Ai-Ling Lu , Mei-Lin Chan
发明人： Chia-Ying Lee , Yen-Chiu Hsu , Ai-Ling Lu , Mei-Lin Chan
IPC分类号： G04C23/18
CPC分类号： G04C23/02 , G04C23/14
摘要： A multifunction time display device includes a main body, a first element, a second element, and an indication element. The main body includes a casing, and the casing possesses a transparent portion. The first element moves inside the casing as time goes by. The second element is removably attached to any position of the transparent portion of the casing. The indication element is triggered when the first element moves to overlap the second element.
摘要翻译：多功能时间显示装置包括主体，第一元件，第二元件和指示元件。主体包括壳体，壳体具有透明部分。随着时间的推移，第一个元素在套管内移动。第二元件可移除地附接到壳体的透明部分的任何位置。当第一元素移动以与第二元素重叠时，指示元件被触发。

8. 发明申请

US20100074061A1 Multifunction Time Display Device 有权
标题翻译：多功能时间显示设备
公开(公告)号：US20100074061A1
公开(公告)日：2010-03-25
申请号：US12566244
申请日：2009-09-24
申请人： Chia-Ying Lee , Yen-Chiu Hsu , Ailing Lu , Mei-Lin Chan
发明人： Chia-Ying Lee , Yen-Chiu Hsu , Ailing Lu , Mei-Lin Chan
IPC分类号： G04B19/00 , G04B19/32
CPC分类号： G04C23/02 , G04C23/14
摘要： A multifunction time display device includes a main body, a first element, a second element, and an indication element. The main body includes a casing, and the casing possesses a transparent portion. The first element moves inside the casing as time goes by. The second element is removably attached to any position of the transparent portion of the casing. The indication element is triggered when the first element moves to overlap the second element.
摘要翻译：多功能时间显示装置包括主体，第一元件，第二元件和指示元件。主体包括壳体，壳体具有透明部分。随着时间的推移，第一个元素在套管内移动。第二元件可移除地附接到壳体的透明部分的任何位置。当第一元素移动以与第二元素重叠时，指示元件被触发。

9. 发明申请

US20100046163A1 PORTABLE ELECTRONIC DEVICE 审中-公开
标题翻译：便携式电子设备
公开(公告)号：US20100046163A1
公开(公告)日：2010-02-25
申请号：US12543988
申请日：2009-08-19
申请人： Ching-Hao YU , Martijn Baller , Yen-Liang Chen , Yung-Chie Huang , Meng-Hsuan Shih , Wei-Chun Chien , Chien-Hsu Hou , Chi-Chen Lin , Jia-Rong Lin , Chia-Ying Lee
发明人： Ching-Hao YU , Martijn Baller , Yen-Liang Chen , Yung-Chie Huang , Meng-Hsuan Shih , Wei-Chun Chien , Chien-Hsu Hou , Chi-Chen Lin , Jia-Rong Lin , Chia-Ying Lee
IPC分类号： H05K7/00
CPC分类号： G06F1/1662 , G06F1/1616
摘要： A portable electronic device includes a casing, a covering layer, and a key. The casing has an opening. The covering layer covers at least one portion of the casing and covers the opening. The key is disposed at the opening and at least one portion of the key is embedded into the opening of the casing to allow one portion of the covering layer to be sandwiched between the key and the casing.
摘要翻译：便携式电子设备包括壳体，覆盖层和键。外壳有开口。覆盖层覆盖壳体的至少一部分并覆盖开口。键设置在开口处，并且钥匙的至少一部分嵌入到壳体的开口中，以允许覆盖层的一部分夹在键和壳体之间。

10. 发明申请

US20090167691A1 Foldable Electronic Device 审中-公开
标题翻译：可折叠电子设备
公开(公告)号：US20090167691A1
公开(公告)日：2009-07-02
申请号：US12337953
申请日：2008-12-18
申请人： Shun-Lung Wang , Wen-Chieh Tseng , Chia-Lin Tai , Chia-Ying Lee , Ching-Ke Lin
发明人： Shun-Lung Wang , Wen-Chieh Tseng , Chia-Lin Tai , Chia-Ying Lee , Ching-Ke Lin
IPC分类号： G06F3/02
CPC分类号： G06F1/1679 , G06F1/1616 , G06F1/1667
摘要： A foldable electronic device includes a main portion, a display portion, a gear set, a saw teeth member and a connection member. The main portion has a top surface. A keyboard is pivotally connected with the top surface of the main portion. The display portion is pivotally connected with the main portion by a rotation shaft such that the display portion is operable to be folded against or unfolded away the top surface. The rotation shaft drives the gear set. The saw teeth member engages with the gear set. The connection member has an end pivotally connected with a bottom surface of the keyboard and an opposite end pivotally connected with the saw teeth member. When the display portion swivels relative to the main portion, the rotation shaft drives the gear set, the saw teeth member and the connection member to move simultaneously so as to swivel the keyboard relative to the top surface.
摘要翻译：可折叠电子装置包括主要部分，显示部分，齿轮组，锯齿部件和连接部件。主要部分具有顶部表面。键盘与主要部分的顶表面枢转连接。显示部分通过旋转轴与主要部分枢转地连接，使得显示部分可操作地折叠抵靠或展开离开顶部表面。旋转轴驱动齿轮组。锯齿构件与齿轮组接合。连接构件具有与键盘的底面可枢转地连接的端部和与锯齿构件枢转地相连的相对端。当显示部分相对于主要部分旋转时，旋转轴驱动齿轮组，锯齿部件和连接部件同时移动，以使键盘相对于顶面旋转。

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