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1. 发明申请

US20100297835A1 METHODS FOR FABRICATING COPPER INDIUM GALLIUM DISELENIDE (CIGS) COMPOUND THIN FILMS 审中-公开
标题翻译：生产铜绿宝石（CIGS）复合薄膜的方法
公开(公告)号：US20100297835A1
公开(公告)日：2010-11-25
申请号：US12567762
申请日：2009-09-26
申请人： Chia-Chih Chuang , Jhe-Wei Guo , Yu Huang
发明人： Chia-Chih Chuang , Jhe-Wei Guo , Yu Huang
IPC分类号： H01L21/20 , H01L31/18
CPC分类号： H01L21/02491 , H01L21/02422 , H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： A method for fabricating a copper-indium-gallium-diselenide (CIGS) compound thin film is provided. In this method, a substrate is first provided. An adhesive layer is formed over the substrate. A metal electrode layer is formed over the adhesive layer. A precursor stacked layer is formed over the metal electrode layer, wherein the precursor stacked layer includes a plurality of copper-gallium (CuGa) alloy layers and at least one copper-indium (CuIn) alloy layer sandwiched between the plurality of CuGa alloy layers. An annealing process is performed to convert the precursor stacked layer into a copper-indium-gallium (CuInGa) alloy layer. A selenization process is performed to convert the CuInGa alloy layer into a copper-indium-gallium-diselenide (CuInGaSe) compound thin film.
摘要翻译：提供了一种制造铜 - 镓 - 二硒化铜（CIGS）复合薄膜的方法。在该方法中，首先提供基板。在衬底上形成粘合剂层。在粘合剂层上形成金属电极层。在金属电极层上方形成前体层叠层，其中前体堆叠层包括夹在多个CuGa合金层之间的多个铜 - 镓（CuGa）合金层和至少一个铜 - 铟（CuIn）合金层。进行退火处理以将前体堆叠层转换成铜铟镓（CuInGa）合金层。进行硒化处理以将CuInGa合金层转化为铜铟镓二硒化物（CuInGaSe）复合薄膜。

2. 发明申请

US20130008380A1 APPARATUS FOR FABRICATING IB-IIIA-VIA2 COMPOUND SEMICONDUCTOR THIN FILMS 审中-公开
标题翻译：用于制备IB-IIIA-VIA2化合物半导体薄膜的装置
公开(公告)号：US20130008380A1
公开(公告)日：2013-01-10
申请号：US13610798
申请日：2012-09-11
申请人： Chia-Chih CHUANG , Yu Huang
发明人： Chia-Chih CHUANG , Yu Huang
IPC分类号： H01L21/203
CPC分类号： H01L21/02568 , C23C14/0623 , C23C14/228 , C23C14/24 , H01L21/02614
摘要： An apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films is provided, including a reaction chamber, a pressure control unit connected with the reaction chamber, a pedestal disposed in the reaction chamber wherein the at least one substrate includes elements of group IB and group IIIA, a first group VIA element supply unit connecting with the reaction chamber for providing vaporized first group VIA elements into the reaction chamber, and a plasma unit disposed in the reaction chamber. In one embodiment, during a reaction in the reaction chamber, the vaporized first group VIA elements flow through the high density plasma region and transform into ionized first group VIA elements, and the ionized first group VIA elements diffuse into the at least one substrate comprising elements of group IB and group IIIA to form a IB-IIIA-VIA2 compound semiconductor thin film thereover.
摘要翻译：提供一种用于制造IB-IIIA-VIA2化合物半导体薄膜的装置，包括反应室，与反应室连接的压力控制单元，设置在反应室中的基座，其中至少一个基板包括组1B和组IIIA，与反应室连接的用于将蒸发的第一组VIA元件提供到反应室中的第一组VIA元件供应单元和设置在反应室中的等离子体单元。在一个实施方案中，在反应室中的反应期间，蒸发的第一组VIA元素流过高密度等离子体区域并转化成电离的第一组VIA元素，并且离子化的第一组VIA元素扩散到至少一个包含元素的IB和IIIA族以形成IB-IIIA-VIA2化合物半导体薄膜。

3. 发明申请

US20100173482A1 METHOD AND APPARATUS FOR FABRICATING IB-IIIA-VIA2 COMPOUND SEMICONDUCTOR THIN FILMS 审中-公开
标题翻译：用于制备IB-IIIA-VIA2复合半导体薄膜的方法和装置
公开(公告)号：US20100173482A1
公开(公告)日：2010-07-08
申请号：US12502140
申请日：2009-07-13
申请人： Chia-Chih Chuang , Yu Huang
发明人： Chia-Chih Chuang , Yu Huang
IPC分类号： H01L21/20 , C23C14/54
CPC分类号： H01L21/02568 , C23C14/0623 , C23C14/228 , C23C14/24 , H01L21/02614
摘要： Methods and apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films are provided. A method for fabricating IB-IIIA-VIA2 compound semiconductor thin films includes providing a substrate with a precursor film thereover, wherein the precursor film includes elements of group IB and group IIIA. An annealing process is performed on the substrate and the precursor film thereover and forms a group IB-IIIA alloy thin film over the substrate. A surface treatment is performed by transporting ionized group VIA elements to the group IB-IIIA alloy thin film to react therewith to thereby form an IB-IIIA-VIA2 compound semiconductor thin film.
摘要翻译：提供了制造IB-IIIA-VIA2化合物半导体薄膜的方法和装置。一种制造IB-IIIA-VIA2化合物半导体薄膜的方法包括在其上提供前体膜的衬底，其中前体膜包括IB族和IIIA族的元素。在衬底和前体膜上进行退火处理，并在衬底上形成IB-IIIA族合金薄膜。通过将离子化VIA族元素输送到IB-IIIA族合金薄膜进行表面处理，与其反应从而形成IB-IIIA-VIA2化合物半导体薄膜。

4. 发明授权

US10956523B2 Method and system for providing a highly-personalized recommendation engine 有权
公开(公告)号：US10956523B2
公开(公告)日：2021-03-23
申请号：US16129453
申请日：2018-09-12
申请人： Yu Huang , Fang Chen
发明人： Yu Huang , Fang Chen
IPC分类号： G06F16/9535 , G06K9/00 , G06N3/08 , G06F16/51 , G06F16/583 , G06K9/62
摘要： Various embodiments of a deep learning (DL)-based face perception engine for constructing, providing, and applying a highly-personalized face perception model for an individual through a deep learning process are disclosed. In some embodiments, a disclosed face perception engine includes a deep neural network configured for training a personalized face perception model for a unique individual based on a standard set of training images and a corresponding set of decisions on the set of training images provided by the unique individual. When sufficiently trained using the standard set of training images and the corresponding set of decisions, the personalized face perception model for the unique individual perceives a new face photo/image as if through the eyes of that unique individual. Hence, the trained face perception model can be used an “agent” or “representative” of the associated person in making very personal decisions, such as to decide if a given face photo/image includes a desirable face in the eyes of that person.

5. 发明授权

US09269154B2 Method and system for image processing to classify an object in an image 有权
标题翻译：用于对图像中的对象进行分类的图像处理方法和系统
公开(公告)号：US09269154B2
公开(公告)日：2016-02-23
申请号：US12686902
申请日：2010-01-13
申请人： Yu Huang , Hongbing Li , Jun Tian , Hong Heather Yu
发明人： Yu Huang , Hongbing Li , Jun Tian , Hong Heather Yu
IPC分类号： G06K9/62 , G06T7/00 , G06K9/32 , G06K9/46 , H04N21/643 , H04N21/8545
CPC分类号： G06T7/0081 , G06K9/3241 , G06K9/4642 , G06K9/4652 , G06K9/6267 , G06T7/11 , G06T7/194 , G06T2207/10024 , G06T2207/30221 , H04N21/23418 , H04N21/23614 , H04N21/4725 , H04N21/64322 , H04N21/8545
摘要： In an image processing method, an object is located within an image. An area around the object is determined and divided into at least first and second portions based upon image information within the area. The object can then be classified based upon both image information in the first portion of the area and image information in the second portion of the area.
摘要翻译：在图像处理方法中，对象位于图像内。基于该区域内的图像信息确定对象周围的区域，并将其划分为至少第一和第二部分。然后可以基于区域的第一部分中的图像信息和区域的第二部分中的图像信息来对对象进行分类。

6. 发明授权

US08815123B2 Fabrication method for ibiiiavia-group amorphous compound and ibiiiavia-group amorphous precursor for thin-film solar cells 有权
标题翻译：用于薄膜太阳能电池的ibiiiavia-group无定形化合物和ibiiiavia-group无定形前体的制造方法
公开(公告)号：US08815123B2
公开(公告)日：2014-08-26
申请号：US12418591
申请日：2009-04-04
申请人： Yu Huang , Chiou Yen Chiou , Bing Joe Hwang , Hsuan-Fu Wang , Shih-Hong Chang , Chih-Lung Lin , Chih-Chung Wu
发明人： Yu Huang , Chiou Yen Chiou , Bing Joe Hwang , Hsuan-Fu Wang , Shih-Hong Chang , Chih-Lung Lin , Chih-Chung Wu
IPC分类号： H01B1/00 , H01B1/12 , B05D5/12 , C08F2/46 , C08J7/18 , B21D53/06 , B21K21/00 , B23P15/26 , C23C16/00 , H01L21/02 , C01B19/00 , H01L31/032 , H01B1/02
CPC分类号： C01B19/002 , C01B19/007 , C01B19/008 , C01P2002/30 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/52 , H01B1/026 , H01L21/02565 , H01L21/02568 , H01L21/0259 , H01L21/02628 , H01L31/0322 , Y02E10/541 , Y10T29/49355
摘要： A method for fabricating an IBIIIAVIA-group amorphous compound used for thin-film solar cells is provided. A mixture solution including elements of Group IB, IIIA, VIA or combinations thereof is provided. The mixture solution is heated and filtered. IBIIIAVIA-group amorphous powders are acquired after drying the heated and filtered mixture solution.
摘要翻译：提供了一种用于制造用于薄膜太阳能电池的IBIIIAVIA-组非晶化合物的方法。提供了包含IB，IIIA，VIA族元素或其组合的混合溶液。将混合溶液加热并过滤。干燥加热过滤的混合溶液后获得IBIIIAVIA-组无定形粉末。

7. 发明申请

US20130270177A1 Dehydration Processes Using Membranes with Hydrophobic Coating 有权
标题翻译：使用具有疏水性涂层的膜的脱水工艺
公开(公告)号：US20130270177A1
公开(公告)日：2013-10-17
申请号：US13916435
申请日：2013-06-12
申请人： Yu Huang , Richard W. Baker , Tiem Aldajani , Jennifer Ly
发明人： Yu Huang , Richard W. Baker , Tiem Aldajani , Jennifer Ly
IPC分类号： B01D71/36
CPC分类号： B01D71/36 , B01D53/268 , B01D61/362 , B01D69/12 , B01D71/12 , B01D71/32 , B01D71/38 , B01D71/80 , B01D2325/20
摘要： Processes for removing water from organic compounds, especially polar compounds such as alcohols. The processes include a membrane-based dehydration step, using a membrane that has a dioxole-based polymer selective layer or the like and a hydrophilic selective layer, and can operate even when the stream to be treated has a high water content, such as 10 wt % or more. The processes are particularly useful for dehydrating ethanol.
摘要翻译：从有机化合物，特别是极性化合物如醇中除去水的方法。该方法包括使用具有二氧杂环烯基聚合物选择层等的膜和亲水选择层的膜基脱水步骤，即使待处理流体具有高含水量，例如10 wt％以上。该方法特别适用于乙醇脱水。

8. 发明授权

US08280688B2 Compactor independent direct diagnosis of test hardware 有权
标题翻译：压缩机独立直接诊断测试硬件
公开(公告)号：US08280688B2
公开(公告)日：2012-10-02
申请号：US12790049
申请日：2010-05-28
申请人： Yu Huang , Wu-Tung Cheng , Janusz Rajski
发明人： Yu Huang , Wu-Tung Cheng , Janusz Rajski
IPC分类号： G06F11/30 , G06F11/00
CPC分类号： G01R31/318547 , G06F11/267 , G06F11/27
摘要： Methods, apparatus, and systems for performing fault diagnosis are disclosed herein. In one exemplary embodiment, a failure log is received comprising entries indicative of compressed test responses to chain patterns and compressed test responses to scan patterns. A faulty scan chain in the circuit-under-test is identified based at least in part on one or more of the entries indicative of the compressed test responses to chain patterns. One or more faulty scan cell candidates in the faulty scan chain are identified based at least in part on one or more of the entries indicative of the compressed test responses to scan patterns. The one or more identified scan cell candidates can be reported. Computer-readable media comprising computer-executable instructions for causing a computer to perform any of the disclosed methods are also provided. Likewise, computer-readable media storing lists of fault candidates identified by any of the disclosed methods are also provided.
摘要翻译：本文公开了用于执行故障诊断的方法，装置和系统。在一个示例性实施例中，接收到故障日志，其包括指示对链模式的压缩测试响应的条目和对扫描模式的压缩测试响应。至少部分地基于指示压缩的测试对链模式的测试响应的一个或多个条目来识别被测电路中的有缺陷的扫描链。至少部分地基于指示对扫描模式的压缩测试响应的一个或多个条目来识别故障扫描链中的一个或多个错误的扫描小区候选。可以报告一个或多个识别的扫描单元候选。还提供了包括用于使计算机执行任何所公开的方法的计算机可执行指令的计算机可读介质。同样，还提供了存储通过任何所公开的方法识别的故障候选列表的计算机可读介质。

9. 发明授权

US08263815B2 Membrane augmented distillation to separate solvents from water 有权
标题翻译：膜增量蒸馏以将溶剂与水分离
公开(公告)号：US08263815B2
公开(公告)日：2012-09-11
申请号：US12674808
申请日：2008-08-27
申请人： Yu Huang , Richard W. Baker , Ramin Daniels , Tiem Aldajani , Jennifer H. Ly , Franklin R. Alvarez , Leland M. Vane
发明人： Yu Huang , Richard W. Baker , Ramin Daniels , Tiem Aldajani , Jennifer H. Ly , Franklin R. Alvarez , Leland M. Vane
IPC分类号： C07C27/34 , B01D3/14
CPC分类号： B01D3/14 , B01D3/002 , B01D3/145 , B01D53/226 , B01D2311/04 , B01D2317/022 , B01D2311/2669 , B01D2311/26
摘要： Processes for removing water from organic solvents, such as ethanol. The processes include distillation to form a rectified overhead vapor, compression of the rectified vapor, and treatment of the compressed vapor by two sequential membrane separation steps.
摘要翻译：从有机溶剂如乙醇中除去水的方法。这些方法包括蒸馏以形成整流的塔顶蒸气，压缩整流的蒸气，以及通过两个顺序的膜分离步骤处理压缩蒸气。

10. 发明授权

US07915151B2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices 有权
标题翻译：掺杂的细长半导体，生长这样的半导体，包括这种半导体的器件和制造这样的器件
公开(公告)号：US07915151B2
公开(公告)日：2011-03-29
申请号：US11543353
申请日：2006-10-04
申请人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01G9/20 , H01L21/20 , H01L21/36
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
摘要翻译：体积掺杂半导体，其为以下至少一个：单晶，细长体积掺杂半导体，其沿着其纵向轴线的任何点具有小于500纳米的最大横截面尺寸，具有至少一部分具有小于500纳米的最小宽度的单体和体掺杂半导体。这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度小于20纳米，或小于10纳米，甚至小于5纳米。这样的半导体可以在生长期间被掺杂。这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组装技术来从这种半导体制造设备。

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