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    • 7. 发明授权
    • Flash memory
    • 闪存
    • US08338880B2
    • 2012-12-25
    • US12834228
    • 2010-07-12
    • Guan-Wei WuI-Chen YangYao-Wen ChangTao-Cheng Lu
    • Guan-Wei WuI-Chen YangYao-Wen ChangTao-Cheng Lu
    • H01L29/66H01L29/788H01L29/792
    • H01L29/792G11C16/0475H01L29/4234H01L29/42352
    • A flash memory and a manufacturing method and an operating method thereof are provided. The flash memory includes a substrate, a charge-trapping structure, a first gate, a second gate, a third gate, a first doped region and a second doped region. The substrate has a protrusion portion. The charge-trapping structure is disposed over the substrate. The first gate and the second gate are disposed respectively over the charge-trapping structure at two sides of the protrusion portion. The top surfaces of the first gate and the second gate are lower than the top surface of the charge-trapping structure located on the top of the protrusion portion. The third gate is disposed over the charge-trapping structure located on the top of the protrusion portion. The first doped region and the second doped region are disposed respectively in the substrate at two sides of the protrusion portion.
    • 提供闪速存储器及其制造方法及其操作方法。 闪速存储器包括衬底,电荷俘获结构,第一栅极,第二栅极,第三栅极,第一掺杂区域和第二掺杂区域。 基板具有突起部。 电荷捕获结构设置在衬底上。 第一栅极和第二栅极分别设置在突出部分的两侧的电荷捕获结构的上方。 第一栅极和第二栅极的顶表面比位于突起部分顶部的电荷捕获结构的顶表面低。 第三栅极设置在位于突起部分的顶部上的电荷捕获结构之上。 第一掺杂区域和第二掺杂区域分别设置在基板的突出部分的两侧。