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1. 发明授权

US4379943A Current enhanced photovoltaic device 失效
标题翻译：电流增强型光伏器件
公开(公告)号：US4379943A
公开(公告)日：1983-04-12
申请号：US330571
申请日：1981-12-14
申请人： Chi C. Yang , Arun Madan , Stanford R. Ovshinsky , David Adler
发明人： Chi C. Yang , Arun Madan , Stanford R. Ovshinsky , David Adler
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20 , H01L31/06 , H01L31/18
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies. The devices are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphous semiconductor alloys including a first intrinsic layer, adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layer. The second intrinsic layer preferably includes silicon and fluorine while the first intrinsic amorphous alloy layer does not include fluorine. The first intrinsic layer may be formed by the glow discharge decomposition of silane gas alone. The thicknesses of the first and second intrinsic layers are adjusted so as to match the respective potential drops thereof with the first intrinsic layer being relatively thin as compared to the second intrinsic layer.
摘要翻译：本公开涉及具有增强的短路电流和效率的光伏器件。这些器件通过在先前沉积的掺杂非晶半导体合金层上沉积本体非晶半导体合金制成，该本体非晶半导体合金包括由非蚀刻起始材料的沉积和不同的第二本征层形成的与掺杂层相邻的第一本征层在第一本征层的组成中。第二本征层优选包括硅和氟，而第一本征非晶合金层不包括氟。第一本征层可以由单独的硅烷气体的辉光放电分解形成。第一本征层和第二本征层的厚度被调整以使其相应的电位滴与第二本征层相比第一本征层相对较薄。

2. 发明授权

US4839312A Fluorinated precursors from which to fabricate amorphous semiconductor material 失效
标题翻译：用于制造非晶半导体材料的氟化前体
公开(公告)号：US4839312A
公开(公告)日：1989-06-13
申请号：US23756
申请日：1987-03-09
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L31/20 , Y02E10/50 , Y02P70/521
摘要： A method producing a solid semiconductor film characterized by a low density of defect states in the energy gap thereof by the glow discharge deposition of a precursor gaseous mixture which includes a gas chosen from the group consisting essentially of hydrogen, fluorine, or combinations thereof and a compound chosen from the group consisting essentially of SiH.sub.3 F, SiH.sub.2 F.sub.2, SiHF.sub.3, SiHCl.sub.3, SiH.sub.2 Cl.sub.2, SiH.sub.3 Cl, SiCl.sub.3 F, SiCl.sub.2 F.sub.2, SiClF.sub.3, or combinations thereof.
摘要翻译：一种制造固体半导体膜的方法，其特征在于通过前驱体气体混合物的辉光放电沉积在其能隙中具有低密度的缺陷状态，其包括选自基本上由氢，氟或其组合组成的组的气体，以及选自基本上由SiH 3 F，SiH 2 F 2，SiHF 3，SiHCl 3，SiH 2 Cl 2，SiH 3 Cl，SiCl 3 F，SiCl 2 F 2，SiClF 3或其组合组成的组的化合物。

3. 发明授权

US4703336A Photodetection and current control devices 失效
标题翻译：光电检测和电流控制装置
公开(公告)号：US4703336A
公开(公告)日：1987-10-27
申请号：US853264
申请日：1986-04-17
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L27/14
CPC分类号： H01L29/04 , H01L21/02425 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/20 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photodetection device and a current control device, both including means responsive to the intensity of incident radiation for providing an output signal corresponding thereto. The responsive means includes a thin semiconductor film comprising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations and an energy gap. At least one compensating element is introduced into that matrix for reducing the density of states in the energy gap thereof.
摘要翻译：光检测装置和电流控制装置都包括响应入射辐射强度的装置，用于提供对应于其的输出信号。响应装置包括薄的半导体膜，其包括具有电子构造和能隙的固体非晶硅或无定形锗主体基质。至少一个补偿元件被引入到该矩阵中以减小其能隙中的状态密度。

4. 发明授权

US4409605A Amorphous semiconductors equivalent to crystalline semiconductors 失效
公开(公告)号：US4409605A
公开(公告)日：1983-10-11
申请号：US427688
申请日：1982-09-29
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L31/20 , Y02E10/50 , Y02P70/521
摘要： An amorphous semiconductor body, most advantageously a glow discharge deposited silicon-containing host matrix film, is provided containing at least fluorine as a compensating or altering agent, and most preferably at least one complementary compensating or altering agent, such as hydrogen, both of which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. The silicon and/or other elements of the host matrix film are deposited by the glow discharge decomposition of gaseous compounds preferably with fluorine as one element of a compound, the hydrogen and other compensating and altering material being preferably a molecular gas or an element of a compound of silicon or other host matrix element.

5. 发明授权

US4710786A Wide band gap semiconductor alloy material 失效
标题翻译：宽带隙半导体合金材料
公开(公告)号：US4710786A
公开(公告)日：1987-12-01
申请号：US872075
申请日：1986-06-09
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L31/20 , Y02E10/50 , Y02P70/521
摘要： A wide band amorphous semiconductor alloy including a host matrix of silicon and incorporating therein carbon or nitrogen and a plurality of different and complimentary density of states reducing elements.
摘要翻译：一种宽带非晶半导体合金，其包括硅主体基体并且其中包含碳或氮并且具有多个不同且互补的状态的还原元件。

6. 发明授权

US4520380A Amorphous semiconductors equivalent to crystalline semiconductors 失效
标题翻译：非晶半导体等效于晶体半导体
公开(公告)号：US4520380A
公开(公告)日：1985-05-28
申请号：US540153
申请日：1983-10-07
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： H01L21/205 , H01L29/04 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L31/20 , Y02E10/50 , Y02P70/521
摘要： An amorphous semiconductor body, most advantageously a glow discharge deposited silicon-containing host matrix film, is provided containing at least fluorine as a compensating or altering agent, and most preferably at least one complementary compensating or altering agent, such as hydrogen, both of which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. The silicon and/or other elements of the host matrix film are deposited by the glow discharge decomposition of gaseous compounds preferably with fluorine as one element of a compound, the hydrogen and other compensating and altering material being preferably a molecular gas or an element of a compound of silicon or other host matrix element.
摘要翻译：提供非晶半导体体，最有利地是辉光放电沉积的含硅主体基质膜，至少含有氟作为补偿或改变剂，最优选至少一种互补的补偿或改变剂，例如氢，两者均为将非晶半导体材料的能隙中的局部缺陷状态降低至单独无法实现的程度。主体基质膜的硅和/或其他元素通过气体化合物的辉光放电分解沉积，优选以氟作为化合物的一种元素，氢和其它补偿和改性材料优选为分子气体或硅或其他主体基质元素的化合物。

7. 发明授权

US4226898A Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process 失效
标题翻译：与通过辉光放电工艺生产的晶体半导体相当的无定形半导体
公开(公告)号：US4226898A
公开(公告)日：1980-10-07
申请号：US887353
申请日：1978-03-16
申请人： Stanford R. Ovshinsky , Arun Madan
发明人： Stanford R. Ovshinsky , Arun Madan
IPC分类号： C23C16/50 , G03G5/082 , H01L21/02 , H01L21/205 , H01L29/04 , H01L29/26 , H01L31/00 , H01L31/20 , H01L45/00
CPC分类号： C23C16/50 , C23C16/24 , C23C16/28 , G03G5/08235 , G03G5/0825 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L29/04 , H01L31/20 , H01L31/202 , H01L21/02576 , H01L21/02579 , Y02E10/50 , Y02P70/521 , Y10S148/061
摘要： A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises depositing on a substrate a solid amorphous semiconductor film including at least one element, by glow discharge decomposition of a compound containing said at least one element and at least one alterant element in an atmosphere separately containing at least one different alterant element, wherein the plurality of different alterant elements comprise at least fluorine and are incorporated in said amorphous semiconductor film during the deposition thereof yielding an altered amorphous semiconductor material having reduced density of localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell application are obtained and modifiers or dopants can be effectively added to produce p-type or n-type amorphous semiconductor films so that the films function like similar crystalline semiconductors.
摘要翻译：制造具有期望的光电导和/或其它性质的非晶半导体膜等的方法包括通过使包含所述至少一种元素的化合物的辉光放电分解和在分开含有至少一种不同的改变元素的气氛中的至少一个可变元素，其中所述多个不同的改变元素至少包含氟，并且在沉积期间并入所述非晶半导体膜中，产生具有降低的局部化的密度的改变的非晶半导体材料在其能隙中状态，从而获得大大增加用于太阳能电池应用的扩散长度，并且可以有效地添加改性剂或掺杂剂以产生p型或n型非晶半导体膜，使得膜类似于类似的结晶半导体。

8. 发明授权

US4698234A Vapor deposition of semiconductor material 失效
标题翻译：半导体材料的蒸镀
公开(公告)号：US4698234A
公开(公告)日：1987-10-06
申请号：US897449
申请日：1986-10-17
申请人： Stanford R. Ovshinsky , Subhendu Guha , Prem Nath , Chi C. Yang , Jeffrey Fournier , James Kulman
发明人： Stanford R. Ovshinsky , Subhendu Guha , Prem Nath , Chi C. Yang , Jeffrey Fournier , James Kulman
IPC分类号： H01L31/04 , H01L21/205 , B05D3/06
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
摘要翻译：用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

9. 发明授权

US4637895A Gas mixtures for the vapor deposition of semiconductor material 失效
标题翻译：用于半导体材料气相沉积的气体混合物
公开(公告)号：US4637895A
公开(公告)日：1987-01-20
申请号：US718661
申请日：1985-04-01
申请人： Stanford R. Ovshinsky , Subhendu Guha , Prem Nath , Chi C. Yang , Jeffrey Fournier , James Kulman
发明人： Stanford R. Ovshinsky , Subhendu Guha , Prem Nath , Chi C. Yang , Jeffrey Fournier , James Kulman
IPC分类号： H01L31/04 , H01L21/205 , C09K11/07
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
摘要翻译：用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

10. 发明授权

US4891074A Multiple cell photoresponsive amorphous alloys and devices 失效
标题翻译：多单元光响应非晶合金和器件
公开(公告)号：US4891074A
公开(公告)日：1990-01-02
申请号：US710947
申请日：1985-03-13
申请人： Stanford R. Ovshinsky , David Adler
发明人： Stanford R. Ovshinsky , David Adler
IPC分类号： C23C14/00 , C23C14/06 , C23C16/24 , H01L25/04 , H01L29/16 , H01L31/0376 , H01L31/07 , H01L31/20
CPC分类号： H01L31/076 , C23C14/0026 , C23C14/06 , C23C16/24 , H01L29/1604 , H01L31/03762 , H01L31/043 , H01L31/07 , H01L31/202 , H01L2924/0002 , Y02E10/548 , Y02P70/521
摘要： The production of improved multiple cell photoresponsive amorphous devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys in one or more cells of the device. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous cells containing silicon and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as carbon or nitrogen to increase the band gap. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of fluorine bonding and electronegativity to the cell alloy acts as a compensating or altering element to reduce the density of states in the energy gap thereof. The fluorine bond strength allows the adjusting element(s) to be added to the alloy cells to adjust the band gap without reducing the electronic qualities of the cell alloy. Hydrogen also acts as a compensating or altering element to compliment fluorine when utilized therewith. The compensating or altering element(s) can be added to the alloy during deposition of the cells or following deposition. The addition of the adjusting element(s) to the cell alloys adjusts the band gap to a selected optimum wavelength threshold for particular cells to increase the photoabsorption efficiency to enhance the device photoresponsive without adding states in the gap of the cells which decrease the efficiency of the devices. The adjusting element(s) can be added in varying amounts, in discrete layers or in substantially constant amounts in the cell alloys.
摘要翻译：改进的多单元光响应非晶体器件如光伏，感光器件等的生产; 通过将一个或多个带隙调节元件添加到该器件的一个或多个单元中的合金，可以实现改进的波长阈值特性。至少将调整元素添加到含硅和氟，优选氢的非晶体的活性光响应区域中。一个调节元件是锗，其带隙与材料的带隙相比较窄，而调节元件并入其中。可以使用其它调节元件，例如碳或氮来增加带隙。硅和调节元件通过气相沉积，溅射或辉光放电分解同时组合并沉积为非晶态合金。向电池合金中添加氟键和电负性作为补偿或改变元素，以降低其间隙中的状态密度。氟键强度允许调节元件添加到合金电池中以调节带隙，而不降低电池合金的电子质量。当与其一起使用时，氢也充当补偿或改变元素以补充氟。补偿或更换元件可以在沉积电池或沉积之后添加到合金中。将调节元件添加到电池合金中将带隙调整到特定电池的选定的最佳波长阈值，以增加光吸收效率以增强器件的光响应，而不会在电池间隙中增加状态，从而降低电池的效率设备。调节元件可以以不同的量以不连续的层或基本恒定的量添加到电池合金中。

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