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1. 发明申请

US20100200411A1 METHOD AND APPARATUS FOR THE SOLUTION DEPOSITION OF OXIDE 审中-公开
标题翻译：用于溶解氧化物沉积的方法和装置
公开(公告)号：US20100200411A1
公开(公告)日：2010-08-12
申请号：US12369022
申请日：2009-02-11
申请人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
发明人： Shengzhong Liu , Chaolan Hu , Yanhua Zhou , Arindam Banerjee , Jeffrey Yang , Subhendu Guha
IPC分类号： C25D5/10
CPC分类号： C25D5/022 , C25D5/18 , C25D5/20 , C25D9/08 , C25D17/00
摘要： A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.
摘要翻译：在溶液沉积工艺中，将诸如透明导电氧化物材料的金属和氧材料电沉积到衬底上。控制工艺参数以便导致适合用于高效光伏器件的后反射器结构的高质量材料层的沉积。沉积可以与操作以限制的掩模构件一起进行金属和氧气材料沉积到衬底的特定部分。在特定情况下，沉积可以以连续的卷对卷方式实施。还公开了通过本方法制造的半导体器件和半导体器件的部件以及用于执行该过程的装置。

2. 发明申请

US20100117172A1 THIN FILM SEMICONDUCTOR ALLOY MATERIAL PREPARED BY A VHF ENERGIZED PLASMA DEPOSITION PROCESS 审中-公开
标题翻译：由甚高频能量等离子体沉积工艺制备的薄膜半导体合金材料
公开(公告)号：US20100117172A1
公开(公告)日：2010-05-13
申请号：US12267149
申请日：2008-11-07
申请人： Baojie Yan , Xixiang Xu , Guozhen Yue , Subhendu Guha , Chi Yang
发明人： Baojie Yan , Xixiang Xu , Guozhen Yue , Subhendu Guha , Chi Yang
IPC分类号： H01L33/00 , H01L21/36
CPC分类号： H01L21/0262 , C23C16/22 , C23C16/5096 , H01J37/32091 , H01J37/32761 , H01J2237/2001 , H01L21/02532 , H01L21/02592 , H01L21/02595
摘要： A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material.
摘要翻译：通过VHF通电等离子体沉积工艺制造薄膜，氢化硅基半导体合金材料，其中处理气体在等离子体中分解，以将薄膜材料沉积到基底上。该过程在0.5-2.0托的范围内的工艺气体压力下进行，衬底温度不超过300℃，衬底 - 阴极间距在10-50毫米的范围内。沉积速率至少为每秒5埃。还公开了包括半导体材料的光伏器件。

3. 发明申请

US20090075483A1 ULTRA LIGHTWEIGHT PHOTOVOLTAIC DEVICE AND METHOD FOR ITS MANUFACTURE 失效
标题翻译：超轻型照明设备及其制造方法
公开(公告)号：US20090075483A1
公开(公告)日：2009-03-19
申请号：US11254838
申请日：2005-10-20
申请人： Subhendu Guha , Arindam Banerjee , Kevin Beernink , Todd Johnson , Ginger Pietka , Gregory DeMaggio , Shengzhong (Frank) Liu , Jeffrey Yang
发明人： Subhendu Guha , Arindam Banerjee , Kevin Beernink , Todd Johnson , Ginger Pietka , Gregory DeMaggio , Shengzhong (Frank) Liu , Jeffrey Yang
IPC分类号： H01L21/311 , H01L31/04
CPC分类号： H01L31/18 , H01L31/0392 , Y02E10/50
摘要： An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.
摘要翻译：诸如光电器件的超轻量半导体器件被制造在不可蚀刻的阻挡层上，其被设置在可蚀刻的衬底上。该装置与合适的蚀刻剂接触足以消除基底厚度的至少一部分的时间。阻挡层防止在蚀刻过程中损坏光伏材料。通过该方法制造的光伏器件具有超过300w / kg的特定功率水平。

4. 发明申请

US20050164474A1 Method for depositing high-quality microcrystalline semiconductor materials 失效
标题翻译：沉积高品质微晶半导体材料的方法
公开(公告)号：US20050164474A1
公开(公告)日：2005-07-28
申请号：US10765435
申请日：2004-01-27
申请人： Subhendu Guha , Chi Yang , Baojie Yan
发明人： Subhendu Guha , Chi Yang , Baojie Yan
IPC分类号： C23C16/24 , C23C16/455 , H01L21/205 , H01L31/18 , H01L31/20 , H01L21/20
CPC分类号： C23C16/45523 , C23C16/24 , H01L21/02532 , H01L21/0262 , H01L31/1816 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
摘要翻译：微晶半导体材料层的等离子体沉积的方法是通过对包含半导体材料的前体的工艺气体和具有电磁能量的稀释剂进行激励，从而产生等离子体来进行的。等离子体将一层微晶半导体材料沉积到基底上。处理气体中稀释剂的浓度随着沉积的微晶半导体材料层的厚度而变化。还公开了该方法用于制备N-I-P型光伏器件的用途。

5. 发明授权

US5476798A Plasma deposition process with substrate temperature control 失效
标题翻译：等离子体沉积工艺与衬底温度控制
公开(公告)号：US5476798A
公开(公告)日：1995-12-19
申请号：US157322
申请日：1993-11-26
申请人： Subhendu Guha
发明人： Subhendu Guha
IPC分类号： H01L21/205 , H01L31/04 , H01L31/20
CPC分类号： H01L31/206 , H01L21/02532 , H01L21/0262 , H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： In a glow discharge deposition process for the preparation of hydrogenated, Group IV semiconductor alloys, the substrate is maintained at a temperature which is positively correlated with the deposition rate and which is high enough to impart sufficient kinetic energy to the layer to activate the removal of undesirable morphologies, but low enough to prevent degradation of the layer caused by the excessive loss of hydrogen.
摘要翻译：在用于制备氢化IV族半导体合金的辉光放电沉积工艺中，衬底保持在与沉积速率正相关的温度，并且足够高以赋予层足够的动能以激活去除但不足的形态，但足够低以防止由于过度的氢气损失引起的层的降解。

6. 发明授权

US5298086A Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby 失效
标题翻译：用于制造改进的效率串联光伏器件的方法及其制造的器件
公开(公告)号：US5298086A
公开(公告)日：1994-03-29
申请号：US990085
申请日：1992-12-14
申请人： Subhendu Guha , Chi C. Yang
发明人： Subhendu Guha , Chi C. Yang
IPC分类号： H01L31/04 , H01L31/076 , H01L31/20 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： The thicknesses of the intrinsic layers of the cells comprising a tandem photovoltaic device are selected so that the cell having the highest quality semiconductor material produces the lowest photocurrent. That cell will then be the dominant cell in the tandem device and its material properties will contribute disproportionately to the overall properties of the tandem device.
摘要翻译：选择包括串联光伏器件的电池的本征层的厚度，使得具有最高质量半导体材料的电池产生最低的光电流。然后，该电池将成为串联装置中的主要电池，并且其材料性质将不利地影响串联装置的整体性能。

7. 发明授权

US4775425A P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same 失效
标题翻译： P型和n型微晶半导体合金材料，包括带隙加宽元件，利用其的器件
公开(公告)号：US4775425A
公开(公告)日：1988-10-04
申请号：US77722
申请日：1987-07-27
申请人： Subhendu Guha , Stanford R. Ovshinsky
发明人： Subhendu Guha , Stanford R. Ovshinsky
IPC分类号： H01L31/04 , H01L21/205 , H01L29/30 , H01L31/0368 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/076 , H01L31/0368 , H01L31/075 , H01L31/20 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S420/903
摘要： An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

8. 发明授权

US4609771A Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material 失效
标题翻译：串联结太阳能电池器件结合改进的微晶p掺杂半导体合金材料
公开(公告)号：US4609771A
公开(公告)日：1986-09-02
申请号：US701320
申请日：1985-02-13
申请人： Subhendu Guha , James Kulman
发明人： Subhendu Guha , James Kulman
IPC分类号： H01L31/04 , C23C16/22 , H01L21/205 , H01L29/04 , H01L31/0368 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/076 , C23C16/22 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L29/04 , H01L31/03687 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A p-doped microcrystalline silicon alloy material incorporated into a tandem photovoltaic device.
摘要翻译：并入到串联光伏器件中的p掺杂的微晶硅合金材料。

9. 发明授权

US4547621A Stable photovoltaic devices and method of producing same 失效
标题翻译：稳定的光伏器件及其制造方法
公开(公告)号：US4547621A
公开(公告)日：1985-10-15
申请号：US623860
申请日：1984-06-25
申请人： Michael Hack , Subhendu Guha
发明人： Michael Hack , Subhendu Guha
IPC分类号： H01L31/04 , H01L31/052 , H01L31/065 , H01L31/06
CPC分类号： H01L31/065 , H01L31/0547 , Y02E10/52
摘要： An improved photovoltaic device characterized by long term stability in its photoconversion ability. The device is adapted to absorb incident light throughout a substantial portion of the bulk of the photoactive region thereof in a substantially uniform manner. Said uniform absorption of light is provided by grading the band gap of at least a portion of the semiconductor material of the photoactive region thereof such that the graded portions most proximate the light incident surface of the photovoltaic device have a wider band gap than do those portions more distal from the light incident surface. The band gap gradation may be smooth or stepped, and may be accomplished by compositional variation of the semiconductor materials forming the photoactive region. A method for fabricating the stable photovoltaic device of the instant invention is also provided.
摘要翻译：一种改进的光电器件，其特征在于其光转换能力的长期稳定性。该装置适于以基本均匀的方式吸收入射光的大部分光活性区域的大部分。通过对其光活性区域的半导体材料的至少一部分的带隙进行分级来提供光的均匀吸收，使得最靠近光伏器件的光入射表面的渐变部分具有比这些部分更宽的带隙远离光入射面。带隙层级可以是平滑的或阶梯状的，并且可以通过形成光活性区域的半导体材料的组成变化来实现。还提供了用于制造本发明的稳定光伏器件的方法。

10. 发明授权

US07902049B2 Method for depositing high-quality microcrystalline semiconductor materials 失效
标题翻译：沉积高品质微晶半导体材料的方法
公开(公告)号：US07902049B2
公开(公告)日：2011-03-08
申请号：US10765435
申请日：2004-01-27
申请人： Subhendu Guha , Chi C. Yang , Baojie Yan
发明人： Subhendu Guha , Chi C. Yang , Baojie Yan
IPC分类号： H01L21/00
CPC分类号： C23C16/45523 , C23C16/24 , H01L21/02532 , H01L21/0262 , H01L31/1816 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
摘要翻译：微晶半导体材料层的等离子体沉积的方法是通过对包含半导体材料的前体的工艺气体和具有电磁能量的稀释剂进行激励，从而产生等离子体来进行的。等离子体将一层微晶半导体材料沉积到基底上。工艺气体中稀释剂的浓度随着沉积的微晶半导体材料层的厚度而变化。还公开了该方法用于制备N-I-P型光伏器件的用途。

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