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1. 发明申请

US20060084869A1 Method and apparatus for enhancing image quality of a two-dimensional ultrasound image 有权
标题翻译：用于提高二维超声图像的图像质量的方法和装置
公开(公告)号：US20060084869A1
公开(公告)日：2006-04-20
申请号：US11198174
申请日：2005-08-08
申请人： Cheol Kim , Young Song , Eun Yang , Jong Ra , Yong Kim , Dong Yu
发明人： Cheol Kim , Young Song , Eun Yang , Jong Ra , Yong Kim , Dong Yu
IPC分类号： A61B8/00
CPC分类号： G06T5/002 , G06T5/003 , G06T2207/10132 , G06T2207/20016 , G06T2207/30004
摘要： The present invention relates a method and an apparatus for enhancing ultrasound image quality through a post-processing. A method for enhancing an image quality of a two-dimensional (2D) ultrasound image, comprises the steps of: a) decomposing the 2D ultrasound image into a plurality of images having a multi-resolution by N levels, wherein N is a positive integer; b) determining characteristics of each pixel in the decomposed image; c) performing an enhancement process for the decomposed image based on the pixel characteristics; d) performing 1st-level composition for the decomposed image; and e) repeatedly performing steps b) to d) until a size of the composed image is identical to that of the 2D ultrasound image.
摘要翻译：本发明涉及通过后处理来提高超声图像质量的方法和装置。一种用于增强二维（2D）超声图像的图像质量的方法，包括以下步骤：a）将2D超声图像分解成具有多分辨率N个等级的多个图像，其中N是正整数 ; b）确定分解图像中每个像素的特征; c）基于像素特性对所分解的图像执行增强处理; d）执行用于分解图像的1 - 级组合物; 以及e）重复执行步骤b）至d），直到合成图像的尺寸与2D超声波图像的尺寸相同。

2. 发明申请

US20060184021A1 Method of improving the quality of a three-dimensional ultrasound doppler image 审中-公开
标题翻译：提高三维超声多普勒图像质量的方法
公开(公告)号：US20060184021A1
公开(公告)日：2006-08-17
申请号：US11330260
申请日：2006-01-12
申请人： Cheol Kim , Jong Ra , Young Song , Jung Lim , Eun Yang , Donghoon Yu , Jae Lee
发明人： Cheol Kim , Jong Ra , Young Song , Jung Lim , Eun Yang , Donghoon Yu , Jae Lee
IPC分类号： A61B8/00
CPC分类号： G06K9/40 , G06K2209/05 , G06T5/002 , G06T5/20 , G06T2207/10024 , G06T2207/10136 , G06T2207/30101
摘要： The present invention relates to a method of improving a 3D ultrasound color Doppler image through a post-processing. A method of processing an ultrasound image, includes the following steps: a) recognizing a target object from an inputted ultrasound image based on an object recognition algorithm using connectivity of the target object; b) setting at least one object region by using the connectivity of the recognized target object; c) calculating a structure matrix by using voxel gradients of the object region; d) calculating a diffusion matrix from the structure matrix; and e) acquiring a processed ultrasound image by applying the diffusion matrix and the voxel gradients to the inputted ultrasound image.
摘要翻译：本发明涉及通过后处理改善3D超声彩色多普勒图像的方法。一种处理超声图像的方法包括以下步骤：a）基于使用目标对象的连接性的对象识别算法从输入的超声图像中识别目标对象; b）通过使用所识别的目标对象的连接来设置至少一个对象区域; c）通过使用对象区域的体素梯度来计算结构矩阵; d）从结构矩阵计算扩散矩阵; 以及e）通过将扩散矩阵和体素梯度应用于输入的超声图像来获取处理的超声图像。

3. 发明申请

US20070016073A1 Apparatus and method for processing an ultrasound spectrum image 有权
标题翻译：用于处理超声波光谱图像的装置和方法
公开(公告)号：US20070016073A1
公开(公告)日：2007-01-18
申请号：US11413157
申请日：2006-04-28
申请人： Hye Kim , Ki Lee , Sung Kim , Eun Yang , Cheol Kim
发明人： Hye Kim , Ki Lee , Sung Kim , Eun Yang , Cheol Kim
IPC分类号： A61B6/00
CPC分类号： G01S7/52077 , A61B8/06 , G01S7/52026 , G01S15/584 , G01S15/8979 , G06K9/0055
摘要： There is provided a method of processing an ultrasound spectrum image. According to such method, a spectrum image is formed based on ultrasound data and then the noise is removed from the spectrum image. The noise-removed spectrum image is matched with one or more spectrum models representing specific spectrum types. Then, whether or not the noise-removed spectrum image contains an aliasing is checked. If the noise-removed spectrum image contains the aliasing, then the aliasing is removed from the noise-removed spectrum image to provide a noise-removed spectrum image without the aliasing. Thereafter, contour tracing is performed on the noise-removed spectrum image without the aliasing to detect contour points. Further, peak tracing is performed on the noise-removed spectrum image without the aliasing to detect peaks.
摘要翻译：提供了一种处理超声波频谱图像的方法。根据这种方法，基于超声数据形成频谱图像，然后从频谱图像中去除噪声。噪声消除的光谱图像与表示特定光谱类型的一个或多个光谱模型相匹配。然后，检查噪声去除的频谱图像是否包含混叠。如果噪声去除的频谱图像包含混叠，则从去除噪声的频谱图像中去除混叠，以提供没有混叠的噪声去除的频谱图像。此后，对噪声去除的频谱图像执行轮廓跟踪，而不需要混叠来检测轮廓点。此外，在没有混叠的噪声去除的频谱图像上执行峰值跟踪以检测峰值。

4. 发明申请

US20150243374A1 DEVICE AND METHOD FOR REPAIRING MEMORY CELL AND MEMORY SYSTEM INCLUDING THE DEVICE 有权
标题翻译：用于修复包含设备的存储器单元和存储器系统的装置和方法
公开(公告)号：US20150243374A1
公开(公告)日：2015-08-27
申请号：US14698219
申请日：2015-04-28
申请人： Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
发明人： Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
IPC分类号： G11C29/00 , G11C8/10 , G11C8/06 , G11C17/16 , G11C17/18
CPC分类号： G11C29/4401 , G01R31/3187 , G06F11/2053 , G06F11/27 , G11B20/1816 , G11C5/04 , G11C8/06 , G11C8/10 , G11C11/40 , G11C11/4078 , G11C11/4094 , G11C11/4096 , G11C17/16 , G11C17/18 , G11C29/027 , G11C29/36 , G11C29/42 , G11C29/44 , G11C29/56 , G11C29/56008 , G11C29/78 , G11C29/785 , G11C2029/4402 , G11C2029/5606
摘要： Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.
摘要翻译：提供了一种用于修复存储器测试系统中的存储单元的方法和装置。测试设备通过根据测试命令测试存储设备来检测故障地址，并将故障地址临时存储在故障地址存储器（FAM）中。故障地址根据故障地址传输模式发送到存储设备，被临时存储在存储器件的暂时失效地址存储器中，然后存储在作为非易失性存储设备的反熔丝阵列。为了确保数据的可靠性，可以读取存储的数据以验证数据，并且验证结果可以与测试设备串联或并行传输。

5. 发明申请

US20130227344A1 DEVICE AND METHOD FOR REPAIRING MEMORY CELL AND MEMORY SYSTEM INCLUDING THE DEVICE 有权
公开(公告)号：US20130227344A1
公开(公告)日：2013-08-29
申请号：US13753165
申请日：2013-01-29
申请人： Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
发明人： Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
IPC分类号： G06F11/27 , G06F11/20
CPC分类号： G11C29/4401 , G01R31/3187 , G06F11/2053 , G06F11/27 , G11B20/1816 , G11C5/04 , G11C8/06 , G11C8/10 , G11C11/40 , G11C11/4078 , G11C11/4094 , G11C11/4096 , G11C17/16 , G11C17/18 , G11C29/027 , G11C29/36 , G11C29/42 , G11C29/44 , G11C29/56 , G11C29/56008 , G11C29/78 , G11C29/785 , G11C2029/4402 , G11C2029/5606
摘要： Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.

6. 发明申请

US20180068742A1 DEVICE AND METHOD FOR REPAIRING MEMORY CELL AND MEMORY SYSTEM INCLUDING THE DEVICE 审中-公开
公开(公告)号：US20180068742A1
公开(公告)日：2018-03-08
申请号：US15795595
申请日：2017-10-27
申请人： Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
发明人： Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
IPC分类号： G11C29/44 , G11C17/16 , G11C11/4078 , G11C11/4094 , G11C11/4096 , G11C17/18 , G11C29/36 , G11C29/42 , G11C29/00
CPC分类号： G11C29/44 , G01R31/3187 , G06F11/2053 , G06F11/27 , G11B20/1816 , G11C5/04 , G11C8/06 , G11C8/10 , G11C11/40 , G11C11/4078 , G11C11/4094 , G11C11/4096 , G11C17/16 , G11C17/18 , G11C29/027 , G11C29/36 , G11C29/42 , G11C29/4401 , G11C29/56 , G11C29/56008 , G11C29/78 , G11C29/785 , G11C2029/4402 , G11C2029/5606
摘要： Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.

7. 发明授权

US09087613B2 Device and method for repairing memory cell and memory system including the device 有权
标题翻译：包括设备在内的修复存储单元和存储器系统的装置和方法
公开(公告)号：US09087613B2
公开(公告)日：2015-07-21
申请号：US13753165
申请日：2013-01-29
申请人： Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
发明人： Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
IPC分类号： G11C29/00 , G11C29/44 , G06F11/27 , G06F11/20 , G11C29/56 , G01R31/3187 , G11B20/18 , G11C5/04 , G11C11/40 , G11C17/16 , G11C17/18 , G11C29/02
CPC分类号： G11C29/4401 , G01R31/3187 , G06F11/2053 , G06F11/27 , G11B20/1816 , G11C5/04 , G11C8/06 , G11C8/10 , G11C11/40 , G11C11/4078 , G11C11/4094 , G11C11/4096 , G11C17/16 , G11C17/18 , G11C29/027 , G11C29/36 , G11C29/42 , G11C29/44 , G11C29/56 , G11C29/56008 , G11C29/78 , G11C29/785 , G11C2029/4402 , G11C2029/5606
摘要： Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.
摘要翻译：提供了一种用于修复存储器测试系统中的存储单元的方法和装置。测试设备通过根据测试命令测试存储设备来检测故障地址，并将故障地址临时存储在故障地址存储器（FAM）中。故障地址根据故障地址传输模式发送到存储设备，被临时存储在存储器件的暂时失效地址存储器中，然后存储在作为非易失性存储设备的反熔丝阵列。为了确保数据的可靠性，可以读取存储的数据以验证数据，并且验证结果可以与测试设备串联或并行传输。

8. 发明授权

US09190407B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09190407B2
公开(公告)日：2015-11-17
申请号：US14569597
申请日：2014-12-12
申请人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
发明人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
IPC分类号： H01L27/088 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L21/8234 , H01L29/49
CPC分类号： H01L29/7853 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0673 , H01L29/42364 , H01L29/4238 , H01L29/49 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/785
摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.
摘要翻译：半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。可以在第二绝缘体的顶表面上形成伪栅电极。还公开了其制造方法和修改方案。

9. 发明授权

US08916460B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08916460B1
公开(公告)日：2014-12-23
申请号：US14270315
申请日：2014-05-05
申请人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
发明人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
IPC分类号： H01L29/49 , H01L29/78 , H01L21/336 , H01L29/66 , H01L21/8238
CPC分类号： H01L29/7853 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0673 , H01L29/42364 , H01L29/4238 , H01L29/49 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/785
摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.
摘要翻译：半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。可以在第二绝缘体的顶表面上形成伪栅电极。还公开了其制造方法和修改方案。

10. 发明授权

US08617991B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08617991B2
公开(公告)日：2013-12-31
申请号：US13526960
申请日：2012-06-19
申请人： Jung-Chan Lee , Yoo-Jung Lee , Ki-Hyung Ko , Dae-Young Kwak , Seung-Jae Lee , Jae-Sung Hur , Sang-Bom Kang , Cheol Kim , Bo-Un Yoon
发明人： Jung-Chan Lee , Yoo-Jung Lee , Ki-Hyung Ko , Dae-Young Kwak , Seung-Jae Lee , Jae-Sung Hur , Sang-Bom Kang , Cheol Kim , Bo-Un Yoon
IPC分类号： H01L21/44
CPC分类号： H01L29/4983 , H01L21/76895 , H01L21/82345 , H01L29/49 , H01L29/66545 , H01L29/78
摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.
摘要翻译：一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

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