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1. 发明申请

US20080283503A1 Method of Processing Nature Pattern on Expitaxial Substrate 审中-公开
标题翻译：在外延基板上处理自然图案的方法
公开(公告)号：US20080283503A1
公开(公告)日：2008-11-20
申请号：US11748478
申请日：2007-05-14
申请人： Cheng-yi Liu , Yi-ju Chen , Shih-Chieh Hsu , Ching-Liang Lin
发明人： Cheng-yi Liu , Yi-ju Chen , Shih-Chieh Hsu , Ching-Liang Lin
IPC分类号： B44C1/22
CPC分类号： H01L33/22 , H01L33/0062
摘要： A method of processing nature pattern on expitaxial substrate, unlike the conventional method of processing regular pattern on expitaxial substrate (such as sapphire substrate) by lithography, wet etches a sapphire substrate directly to obtain a nature pattern, so as to simplify the fabrication process. Compared with the conventional way of processing pattern sapphire, the nature pattern sapphire substrate produced by the method can avoid voids between the interface of sapphire and GaN and apply this technology to a wired bond LED structure to increase the sidewall light extraction and improve the texture of the sapphire surface of a flip chip LED structure. In addition, this method also can be applied to a thin-GaN LED for achieving the surface texture after the sapphire is removed by laser.
摘要翻译：在外延衬底上处理自然图案的方法，与通过光刻在外延衬底（例如蓝宝石衬底）上处理规则图案的常规方法不同，直接湿法蚀刻蓝宝石衬底以获得自然图案，从而简化制造工艺。与传统的蓝宝石处理方式相比，通过该方法生产的蓝宝石蓝宝石衬底可以避免蓝宝石和GaN界面之间的空隙，并将此技术应用于有线键合LED结构，增加侧壁光提取，改善纹理蓝宝石表面的倒装芯片LED结构。此外，该方法也可以应用于在通过激光去除蓝宝石之后实现表面纹理的薄GaN LED。

2. 发明申请

US20070010035A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20070010035A1
公开(公告)日：2007-01-11
申请号：US11425149
申请日：2006-06-20
申请人： Cheng-Yi Liu , Shih-Chieh Hsu , Ching-Liang Lin , Yong-Syun Lin
发明人： Cheng-Yi Liu , Shih-Chieh Hsu , Ching-Liang Lin , Yong-Syun Lin
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/42
摘要： A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a first transparent conductive layer is formed on the second type doped semiconductor layer. Next, a substitution substrate having a second transparent conductive layer formed thereon is provided. Then, a wafer bonding process is performed on the epitaxy substrate and the substitution substrate, so as to bond the first transparent conductive layer and the second transparent conductive layer. Finally, the epitaxy substrate is removed. As mentioned above, an LED with better reliability is fabricated according to the method provided by the present invention. Moreover, the present invention further provides an LED.
摘要翻译：提供一种制造发光二极管（LED）的方法。首先，在外延基板上依次形成第一掺杂半导体层，发光层和第二掺杂半导体层。然后，在第二型掺杂半导体层上形成第一透明导电层。接下来，提供其上形成有第二透明导电层的置换基板。然后，在外延基板和置换基板上进行晶片接合工艺，以便将第一透明导电层和第二透明导电层接合。最后，除去外延衬底。如上所述，根据本发明提供的方法制造具有更好可靠性的LED。此外，本发明还提供一种LED。

3. 发明申请

US20090146166A1 Structure Applying Optical Limit Guide Layer 审中-公开
标题翻译：结构应用光限制导向层
公开(公告)号：US20090146166A1
公开(公告)日：2009-06-11
申请号：US12060878
申请日：2008-04-02
申请人： Cheng-yi Liu , Yung-Hsun Lin , Ching-Liang Lin , Po-Han Chen , Chia-Lun Chang , Pen-Ko Chou , Yi-Ju Chen , You-Hsian Chang
发明人： Cheng-yi Liu , Yung-Hsun Lin , Ching-Liang Lin , Po-Han Chen , Chia-Lun Chang , Pen-Ko Chou , Yi-Ju Chen , You-Hsian Chang
IPC分类号： H01L33/00 , F21V8/00
CPC分类号： G02B6/122 , G02B6/13 , H01L33/0079 , H01L33/405
摘要： A structure applying an optical wave guide layer includes an incident light source and at least one optical wave guide layer. The structure can be in any geometric shape such as a planar, hemispherical or conical shape. The geometric structure is designed for collecting and guiding the incident light source in specific directions. The light can be guided by a combination of materials having different optical properties. The incident angle of the collected light is controlled and the materials are selected to effectively overcome a drawback of the prior art that a portion of the light of some optical components cannot be extracted by a light extraction method.
摘要翻译：应用光波导层的结构包括入射光源和至少一个光波导层。该结构可以是任何几何形状，例如平面，半球形或圆锥形。几何结构设计用于在特定方向上收集和引导入射光源。光可以由具有不同光学性质的材料的组合引导。控制所收集的光的入射角，并且选择材料以有效地克服现有技术的缺点，即一些光学部件的光的一部分不能通过光提取方法提取。

4. 发明申请

US20110300650A1 LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US20110300650A1
公开(公告)日：2011-12-08
申请号：US13207889
申请日：2011-08-11
申请人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
发明人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译：发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩散层和微型或纳米粗糙结构。导热粘合剂层设置在导热基板上。外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。微结构或纳米粗糙结构设置在外延层的第一半导体层上。此外，还公开了一种LED装置的制造方法。

5. 发明申请

US20080003707A1 Method for fabricating diode having reflective electrode of alloy metal 审中-公开
标题翻译：制造具有合金金属反射电极的二极管的方法
公开(公告)号：US20080003707A1
公开(公告)日：2008-01-03
申请号：US11501015
申请日：2006-08-09
申请人： Cheng-Yi Liu , Chia-Hsien Chou , Ching-Liang Lin
发明人： Cheng-Yi Liu , Chia-Hsien Chou , Ching-Liang Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： The present invention provides a method to fabricate a diode whose heat stability is improved. The diode has a layer of high reflective ohmic contact and an alloy metal is used in the layer. With the alloy metal used in the layer, the heat stability of the diode is improved.
摘要翻译：本发明提供一种制造热稳定性提高的二极管的方法。二极管具有高反射欧姆接触层，在该层中使用合金金属。使用该层中使用的合金金属，二极管的热稳定性得到改善。

6. 发明授权

US08153461B2 Light-emitting diode apparatus and manufacturing method thereof 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US08153461B2
公开(公告)日：2012-04-10
申请号：US13207889
申请日：2011-08-11
申请人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
发明人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
IPC分类号： H01L21/00 , H01L33/60
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译：发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩展层和微型或纳米粗糙结构。导热粘合剂层设置在导热基板上。外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。微结构或纳米粗糙结构设置在外延层的第一半导体层上。此外，还公开了一种LED装置的制造方法。

7. 发明申请

US20080138965A1 Amorphous Si/Au eutectic wafer bonding structure 有权
标题翻译：非晶Si / Au共晶晶片结合结构
公开(公告)号：US20080138965A1
公开(公告)日：2008-06-12
申请号：US11649892
申请日：2007-01-05
申请人： Cheng-yi Liu , Po-Han Chan , Ching-Liang Lin
发明人： Cheng-yi Liu , Po-Han Chan , Ching-Liang Lin
IPC分类号： H01L21/36
CPC分类号： H01L21/2007
摘要： An amorphous Si (silicon)/Au (gold) eutectic wafer bonding structure is fabricated. An amorphous Si obtained through coating or growth contacts with Au for bonding. The bonding layer is a Si/Au eutectic layer. Si is prevented from being precipitated. The bonding structure has a fast reaction ratio and a uniformed reaction. Thus, an electrical device has an improved electricity and reliability.
摘要翻译：制造非晶Si（硅）/ Au（金）共晶晶片接合结构。通过涂覆或生长获得的非晶硅与Au接触以进行接合。结合层是Si / Au共晶层。防止了Si沉淀。键合结构具有快速的反应比和均匀的反应。因此，电气设备具有改善的电力和可靠性。

8. 发明授权

US08017962B2 Light-emitting diode apparatus and manufacturing method thereof 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US08017962B2
公开(公告)日：2011-09-13
申请号：US12193271
申请日：2008-08-18
申请人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
发明人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译：发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩散层和微型或纳米粗糙结构。导热粘合剂层设置在导热基板上。外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。微结构或纳米粗糙结构设置在外延层的第一半导体层上。此外，还公开了一种LED装置的制造方法。

9. 发明授权

US07507636B2 Amorphous Si/Au eutectic wafer bonding structure 有权
标题翻译：非晶Si / Au共晶晶片结合结构
公开(公告)号：US07507636B2
公开(公告)日：2009-03-24
申请号：US11649892
申请日：2007-01-05
申请人： Cheng-yi Liu , Po-Han Chan , Ching-Liang Lin
发明人： Cheng-yi Liu , Po-Han Chan , Ching-Liang Lin
IPC分类号： H01L21/00
CPC分类号： H01L21/2007
摘要： An amorphous Si (silicon)/Au (gold) eutectic wafer bonding structure is fabricated. An amorphous Si obtained through coating or growth contacts with Au for bonding. The bonding layer is a Si/Au eutectic layer. Si is prevented from being precipitated. The bonding structure has a fast reaction ratio and a uniformed reaction. Thus, an electrical device has an improved electricity and reliability.
摘要翻译：制造非晶Si（硅）/ Au（金）共晶晶片接合结构。通过涂覆或生长获得的非晶硅与Au接触以进行接合。结合层是Si / Au共晶层。防止了Si沉淀。键合结构具有快速的反应比和均匀的反应。因此，电气设备具有改善的电力和可靠性。

10. 发明申请

US20080176354A1 Method of uniform current distribution using current modified layer 审中-公开
标题翻译：使用当前修改层均匀电流分布的方法
公开(公告)号：US20080176354A1
公开(公告)日：2008-07-24
申请号：US11790096
申请日：2007-04-23
申请人： Cheng-yi Liu , Te-Yuan Chung , Pen-ko Chou , Ching-Liang Lin
发明人： Cheng-yi Liu , Te-Yuan Chung , Pen-ko Chou , Ching-Liang Lin
IPC分类号： H01L21/3205
CPC分类号： H01L29/7371 , H01L29/201 , H01L29/205
摘要： An electric device has a p-n diode, where the p-n diode is covered with a current modified layer (CML). With a resistance distribution of the CML, a current is decreased toward all directions from a point on a bonding pad between the CML and the p-n diode. Hence, a current is uniformly distributed on the CML by fine tuning the resistance distribution. Thus, an effectiveness of the electric device is improved.
摘要翻译：电气设备具有p-n二极管，其中p-n二极管被当前修改的层（CML）覆盖。利用CML的电阻分布，电流从CML和p-n二极管之间的焊盘上的一个点向着所有方向减小。因此，通过微调电阻分布，电流均匀分布在CML上。因此，电气设备的有效性得到改善。

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