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1. 发明申请

US20060243991A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060243991A1
公开(公告)日：2006-11-02
申请号：US11306418
申请日：2005-12-28
申请人： Cheng-Yi Liu , Shih-Chien Hsu
发明人： Cheng-Yi Liu , Shih-Chien Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a gold layer is formed on the second type doped semiconductor layer. Next, a silicon substrate is provided, and a wafer bonding process is performed between the silicon substrate and the gold layer. Finally, the epitaxy substrate is removed. As mentioned above, a LED with better reliability and efficiency of light-emitting is fabricated according to the method provided by the present invention. Moreover, the present invention further provides a LED.
摘要翻译：提供一种制造发光二极管（LED）的方法。首先，在外延衬底上依次形成第一掺杂半导体层，发光层和第二掺杂半导体层。然后，在第二型掺杂半导体层上形成金层。接下来，提供硅衬底，并且在硅衬底和金层之间执行晶片接合工艺。最后，除去外延衬底。如上所述，根据本发明提供的方法制造具有更好的发光可靠性和效率的LED。此外，本发明还提供一种LED。

2. 发明授权

US06635537B2 Method of fabricating gate oxide 有权
公开(公告)号：US06635537B2
公开(公告)日：2003-10-21
申请号：US09828544
申请日：2001-04-06
申请人： Tong-Hsin Lee , Shih-Chien Hsu , Chang-Chi Huang , Cheng-Tung Huang , Sheng-Hao Lin
发明人： Tong-Hsin Lee , Shih-Chien Hsu , Chang-Chi Huang , Cheng-Tung Huang , Sheng-Hao Lin
IPC分类号： H01L21336
CPC分类号： H01L21/76224 , H01L21/823462 , H01L21/823481
摘要： A method of fabricating a gate oxide layer. A mask layer isformed on a substrate. The mask layer and the substrate are patterned to form a trench in the substrate. A portion of the mask layer is removed to expose the substrate at a top edge corner portion of the trench. An insulation layer is formed to fill the trench and covering the exposed substrate and the remaining mask layer. The insulation layer over the remaining mask layer is removed to expose the mask layer. The remaining mask layer is removed to expose the substrate. The exposed substrate is implanted with ions to reduce the oxidation rate. As a result, the substrate at the top edge corner portion of the trench covered with the insulation layer has an oxidation rate higher than the exposed substrate. The insulation layer over the surface level of the substrate is then removed to expose the substrate at the top edge corner portion of the trench. A gate oxide is formed on the substrate with a thickness larger at the top edge corner of the trench than elsewhere.

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