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    • 6. 发明授权
    • Light emitting diode and fabricating method thereof
    • 发光二极管及其制造方法
    • US07265389B2
    • 2007-09-04
    • US11163314
    • 2005-10-14
    • Cheng-Yi LiuYuan-Tai LaiShen-Jie Wang
    • Cheng-Yi LiuYuan-Tai LaiShen-Jie Wang
    • H01L27/15H01L21/00
    • H01L33/0079H01L25/0753H01L2224/48091H01L2924/00014
    • A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy substrate; removing a part of the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer for exposing a part of the bonding layer; patterning the bonding layer to form a first and a second bonding portion isolated from each other, wherein the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer are disposed on the first bonding portion; forming a pad on the first type doped semiconductor layer; and forming a conducting wire for electrically connecting the pad and the second bonding portion.
    • 提供一种制造发光二极管(LED)的方法。 在外延衬底上连续形成第一掺杂半导体层,发光层和第二掺杂半导体层; 在其上形成结合层; 用转移衬底与接合层接合; 去除外延衬底; 去除所述第一类型掺杂半导体层的一部分,所述发光层和所述第二类型掺杂半导体层,用于暴露所述结合层的一部分; 图案化所述接合层以形成彼此隔离的第一和第二接合部分,其中所述第一掺杂半导体层,所述发光层和所述第二掺杂半导体层设置在所述第一接合部分上; 在所述第一掺杂半导体层上形成焊盘; 以及形成用于电连接所述焊盘和所述第二接合部的导线。
    • 10. 发明申请
    • LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    • 发光二极管及其制造方法
    • US20060255348A1
    • 2006-11-16
    • US11164133
    • 2005-11-11
    • Cheng-Yi LiuShih-Chieh Hsu
    • Cheng-Yi LiuShih-Chieh Hsu
    • H01L21/00H01L33/00
    • H01L33/0079
    • A method for fabricating a light emitting diode (LED) is provided. A first-type doped semiconductor layer, a light emitting layer and a second-type doped semiconductor layer are formed on an epitaxy substrate sequentially. Then, a gold layer is formed on the second-type doped semiconductor layer. Next, a bonding substrate is provided. The bonding substrate includes a silicon substrate and a germanium-contained layer disposed on the silicon substrate. Then, a bonding process is performed on the bonding substrate and the gold layer. Next, the epitaxy substrate is removed. Accordingly, a LED with better reliability and light-emitting efficiency can be made. Moreover, a LED is also provided.
    • 提供一种制造发光二极管(LED)的方法。 依次在外延基板上形成第一掺杂半导体层,发光层和第二掺杂半导体层。 然后,在第二掺杂半导体层上形成金层。 接下来,提供接合基板。 接合基板包括硅基板和设置在硅基板上的含锗层。 然后,对接合基板和金层进行接合处理。 接下来,除去外延基板。 因此,可以实现具有更好的可靠性和发光效率的LED。 此外,还提供了LED。