专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070102736A1 IMAGE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：图像传感器装置及其制造方法
公开(公告)号：US20070102736A1
公开(公告)日：2007-05-10
申请号：US11163936
申请日：2005-11-04
申请人： Cheng-Hsing Chuang , Tsuan-Lun Lung , Chih-Hung Cheng , Wei-Chen Sun
发明人： Cheng-Hsing Chuang , Tsuan-Lun Lung , Chih-Hung Cheng , Wei-Chen Sun
IPC分类号： H01L31/113 , H01L21/465
CPC分类号： H01L27/14683 , H01L27/14603
摘要： The invention is directed to a method for manufacturing an image sensor device. The method comprises steps of forming a photodiode and a transistor on a substrate. A salicide block is formed over a photo-sensing region of the photodiode. An interconnects processes is performed several times to forming a plurality of dielectric layers over the substrate and interconnects between the dielectric layers. A photolithography and etching process is performed to remove the dielectric layers over the photo-sensing region to expose the salicide block over the photo-sensing region.
摘要翻译：本发明涉及一种用于制造图像传感器装置的方法。该方法包括在衬底上形成光电二极管和晶体管的步骤。在光电二极管的光敏区域上形成自对准硅化物块。进行多次互连处理以在衬底上形成多个电介质层并且在电介质层之间互连。执行光刻和蚀刻工艺以去除光敏区域上的电介质层，以在光敏区域上露出自对接硅化物块。

2. 发明申请

US20080220614A1 METHOD FOR MANUFACTURING IMAGE SENSOR DEVICE 审中-公开
标题翻译：制造图像传感器装置的方法
公开(公告)号：US20080220614A1
公开(公告)日：2008-09-11
申请号：US12119510
申请日：2008-05-13
申请人： Cheng-Hsing Chuang , Tsuan-Lun Lung , Chih-Hung Cheng , Wei-Chen Sun
发明人： Cheng-Hsing Chuang , Tsuan-Lun Lung , Chih-Hung Cheng , Wei-Chen Sun
IPC分类号： H01L21/306
CPC分类号： H01L27/14683 , H01L27/14603
摘要： The invention is directed to a method for manufacturing an image sensor device. The method comprises steps of forming a photodiode and a transistor on a substrate. A salicide block is formed over a photo-sensing region of the photodiode. An interconnects processes is performed several times to forming a plurality of dielectric layers over the substrate and interconnects between the dielectric layers. A photolithography and etching process is performed to remove the dielectric layers over the photo-sensing region to expose the salicide block over the photo-sensing region.
摘要翻译：本发明涉及一种用于制造图像传感器装置的方法。该方法包括在衬底上形成光电二极管和晶体管的步骤。在光电二极管的光敏区域上形成自对准硅化物块。进行多次互连处理以在衬底上形成多个电介质层并且在电介质层之间互连。执行光刻和蚀刻工艺以去除光敏区域上的电介质层，以在光敏区域上露出自对接硅化物块。

3. 发明申请

US20070029580A1 IMAGE-PROCESSING UNIT 审中-公开
标题翻译：图像处理单元
公开(公告)号：US20070029580A1
公开(公告)日：2007-02-08
申请号：US11161528
申请日：2005-08-08
申请人： Tsuan-Lun Lung , Chih-Hung Cheng
发明人： Tsuan-Lun Lung , Chih-Hung Cheng
IPC分类号： H01L27/148
CPC分类号： H01L27/14603 , H01L27/14643
摘要： An image-processing unit for an image sensor is provided. The image-processing unit comprises a plurality of photodiodes arranged inside the image sensor. The photodiodes have different sensing area according to its location. Typically, the sensing area of the photodiodes increases from the center toward the periphery. Therefore, the attenuation of sensitivity caused by a larger incident angle away from the central region can be compensated to enhance image quality.
摘要翻译：提供了一种用于图像传感器的图像处理单元。图像处理单元包括布置在图像传感器内部的多个光电二极管。光电二极管根据其位置具有不同的感测区域。通常，光电二极管的感测区域从中心向周边增加。因此，可以补偿远离中心区域的较大入射角导致的灵敏度衰减，以提高图像质量。

4. 发明申请

US20070054429A1 BACK PANEL MANUFACTURING PROCESS 审中-公开
标题翻译：后面板制造工艺
公开(公告)号：US20070054429A1
公开(公告)日：2007-03-08
申请号：US11161997
申请日：2005-08-25
申请人： Tsuan-Lun Lung , Chih-Hung Cheng , Yi-Tyng Wu , Shih-Hung Chen
发明人： Tsuan-Lun Lung , Chih-Hung Cheng , Yi-Tyng Wu , Shih-Hung Chen
IPC分类号： H01L51/40 , H01L21/00 , H01L21/44
CPC分类号： H01L51/5271 , G02F1/133553 , G02F1/136277 , H01L51/56 , H01L2251/5315
摘要： A method for manufacturing a back panel on a substrate is provided. The substrate has at least a switching device formed therein and a dielectric layer structure formed thereon. An interconnect structure is also formed in the dielectric layer structure. The method of forming the back panel comprises the step of performing an alloying process. After the alloying process, a pixel mirror layer is formed over the substrate. The pixel mirror layer is electrically connected to the switching device through the interconnect structure. A planar passivation layer is formed on the pixel mirror layer. Then, the planar passivation layer is patterned to expose a portion of the pixel mirror layer.
摘要翻译：提供了一种用于在基板上制造背板的方法。基板至少形成有开关装置，并且在其上形成介电层结构。在电介质层结构中也形成互连结构。形成后面板的方法包括进行合金化处理的步骤。在合金化处理之后，在衬底上形成像素镜层。像素镜层通过互连结构电连接到开关装置。平面钝化层形成在像素镜面层上。然后，对平面钝化层进行图案化以暴露像素镜面层的一部分。

5. 发明申请

US20070007533A1 PIXEL ARRAY STRCUTURE 审中-公开
标题翻译：像素阵列
公开(公告)号：US20070007533A1
公开(公告)日：2007-01-11
申请号：US11160775
申请日：2005-07-08
申请人： Yi-Tyng Wu , Tsuan-Lun Lung , Chih-Hung Cheng , Kuan-Te Pai
发明人： Yi-Tyng Wu , Tsuan-Lun Lung , Chih-Hung Cheng , Kuan-Te Pai
IPC分类号： H01L29/08
CPC分类号： H01L27/3246 , H01L27/3244 , H01L51/5221 , H01L2251/5315 , H01L2251/558
摘要： A pixel array structure is provided. The pixel array structure comprises a plurality of pixel units and a plurality of dielectric walls. Each dielectric wall is disposed between two neighboring pixel units, wherein each pixel unit comprises at least one organic light emitting diode and a complementary metal-oxide-semiconductor (CMOS). The organic light emitting diode comprises a transparent electrode, a bottom electrode, and a light emitting material between the transparent electrode and the bottom electrode. The CMOS is disposed in a substrate. The substrate comprises a top-metal-layer structure located thereon and the top-metal-layer structure comprises an upmost top metal layer. Further, the bottom electrode of the CMOS is the upmost top metal layer of the top-metal-layer structure and the upmost top metal layer is a titanium metal layer.
摘要翻译：提供像素阵列结构。像素阵列结构包括多个像素单元和多个电介质壁。每个电介质壁设置在两个相邻像素单元之间，其中每个像素单元包括至少一个有机发光二极管和互补金属氧化物半导体（CMOS）。有机发光二极管包括在透明电极和底部电极之间的透明电极，底部电极和发光材料。 CMOS设置在基板中。衬底包括位于其上的顶部金属层结构，并且顶部金属层结构包括最上面的顶部金属层。此外，CMOS的底部电极是顶部金属层结构的最上层金属层，最上层金属层是钛金属层。

6. 发明授权

US07915674B2 Lateral diffused metal oxide semiconductor device 失效
标题翻译：横向扩散金属氧化物半导体器件
公开(公告)号：US07915674B2
公开(公告)日：2011-03-29
申请号：US12133388
申请日：2008-06-05
申请人： Chyh-Yih Chang , Hsing-Hua Sun , Tsuan-Lun Lung , Chen-Ming Chiu
发明人： Chyh-Yih Chang , Hsing-Hua Sun , Tsuan-Lun Lung , Chen-Ming Chiu
IPC分类号： H01L29/66
CPC分类号： H01L29/7817 , H01L29/0653 , H01L29/0878 , H01L29/1095
摘要： An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.
摘要翻译：示例性的横向扩散金属氧化物半导体器件包括第一类型衬底，设置在第一类型衬底上的栅极氧化膜，设置在栅极氧化物膜上的多晶硅栅极，形成在第一衬底中的第一第二类型轻掺杂区域，形成在阱中并用作体的第一第一第一高掺杂区域，形成在体内并作为源的第一第二第二类型高掺杂区域，第二第二高度掺杂区域掺杂区域形成在阱中并用作漏极，形成在体内的第二第一第一高掺杂区域和形成在体内并位于源极之下的第一第一掺杂区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式