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1. 发明授权

US4376663A Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate 失效
标题翻译：在CdTe基板上生长的HgCdTe的外延层上生长CdTe外延层的方法
公开(公告)号：US4376663A
公开(公告)日：1983-03-15
申请号：US328766
申请日：1981-12-08
申请人： Cheng-Chi Wang , Muren Chu
发明人： Cheng-Chi Wang , Muren Chu
IPC分类号： H01L21/368 , H01L21/465 , H01L31/109 , H01L31/18 , H01L21/208
CPC分类号： H01L31/1832 , H01L21/02411 , H01L21/02433 , H01L21/0248 , H01L21/02562 , H01L21/02568 , H01L21/02625 , H01L21/02628 , H01L21/02658 , H01L21/465 , H01L31/109 , H01L31/1828 , Y02E10/543 , Y10S438/955
摘要： Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phase epitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is Sn:Hg:CdTe=36:5:0.15 parts by weight. The growth temperature is a function of the amount of CdTe in solution. For the typical composition stated, the growth temperature is about 520.degree. C. The layers were grown on (111)A oriented CdTe substrates. The HgCdTe epilayer with a desired Cd composition is first grown, and an epilayer of CdTe is subsequently grown on the HgCdTe epilayer. The cross-diffusion at the CdTe/Hg.sub.1-x Cd.sub.x Te interface has been as small as 0.3 .mu.m for the thin CdTe epilayer. The first CdTe/HgCdTe heterojunction sensitive to .about.2.8 .mu.m at 77K has been demonstrated.
摘要翻译：公开了通过液相外延在HgCdTe上生长CdTe层的方法。用于生长的溶液包括具有少量CdTe的Sn和Hg。典型的组成是Sn：Hg：CdTe = 36:5:0.15重量份。生长温度是溶液中CdTe量的函数。对于所述的典型组成，生长温度为约520℃。将层在（111）A取向的CdTe底物上生长。首先生长具有所需Cd组成的HgCdTe外延层，随后在HgCdTe外延层上生长CdTe的外延层。 CdTe / Hg1-xCdxTe界面的交叉扩散对于薄的CdTe外延层来说已经小到0.3μm。已经证明了在77K下对于差异2.8μm敏感的第一CdTe / HgCdTe异质结。

2. 发明授权

US5192695A Method of making an infrared detector 失效
标题翻译：制作红外探测器的方法
公开(公告)号：US5192695A
公开(公告)日：1993-03-09
申请号：US727402
申请日：1991-07-09
申请人： Cheng-Chi Wang , Yet-Zen Liu , Muren Chu
发明人： Cheng-Chi Wang , Yet-Zen Liu , Muren Chu
IPC分类号： H01L31/109 , H01L31/18
CPC分类号： H01L31/1832 , H01L31/109 , Y10S148/031 , Y10S438/936
摘要： HgCdTe semiconductor material having an n-type epitaxial layer is grown on a substrate. A graded p-type epitaxial layer is grown on the n-type layer. The p-type layer is graded such that the large bandgap region is adjacent the heterojunction with the narrow bandgap region at the surface of this layer. The periphery of the p-type layer is then etched to expose the large bandgap material. A HgCdTe passivation layer may then be formed on the p-type layer. A resultant structure is then mesa etched. A metal, such as indium, is formed along the walls of the mesa structure. Indium is selected to form a good ohmic contact with the n-type layer and a Schottky barrier with the large bandgap exposed edge of the p-type layer. In this way, the PN junction is passivated at the large bandgap material. The remaining narrow bandgap material in the p-type will form a good ohmic contact to a metal contact formed on this layer.
摘要翻译：具有n型外延层的HgCdTe半导体材料生长在基板上。渐变的p型外延层生长在n型层上。 p型层被分级，使得大的带隙区域与该层表面处的窄带隙区域的异质结相邻。然后蚀刻p型层的周边以暴露大的带隙材料。然后可以在p型层上形成HgCdTe钝化层。然后将得到的结构台面蚀刻。沿着台面结构的壁形成诸如铟的金属。选择铟以与n型层形成良好的欧姆接触，并且形成具有p型层的大带隙暴露边缘的肖特基势垒。以这种方式，PN结在大的带隙材料上被钝化。 p型中剩余的窄带隙材料将与形成在该层上的金属接触形成良好的欧姆接触。

3. 发明授权

US4357620A Liquid-phase epitaxial growth of cdTe on HgCdTe 失效
标题翻译： CdTe在HgCdTe上的液相外延生长
公开(公告)号：US4357620A
公开(公告)日：1982-11-02
申请号：US207863
申请日：1980-11-18
申请人： Cheng-Chi Wang , Muren Chu
发明人： Cheng-Chi Wang , Muren Chu
IPC分类号： H01L21/368 , H01L31/109 , H01L31/18 , H01L29/161 , H01L27/14
CPC分类号： H01L31/1832 , H01L21/02411 , H01L21/0248 , H01L21/02562 , H01L21/02625 , H01L21/02628 , H01L21/02658 , H01L31/109 , H01L31/1828 , H01L21/02573 , H01L21/02667 , Y02E10/543
摘要： Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phasepitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is Sn:Hg:CdTe=36:5:0.15 parts by weight. The growth temperature is a function of the amount of CdTe in solution. For the typical composition stated, the growth temperature is about 520.degree. C. The layers were grown on (111)A oriented CdTe substrates. The HgCdTe epilayer with a desired Cd composition is first grown, and an epilayer of CdTe is subsequently grown on the HgCdTe epilayer. The cross-diffusion at the CdTe/Hg.sub.1-x Cd.sub.x Te interface has been as small as 0.3 .mu.m for the thin CdTe epilayer. The first CdTe/HgCdTe heterojunction sensitive to .about.2.8 .mu.m at 77.degree. K. has been demonstrated.
摘要翻译：公开了一种通过液相外延在HgCdTe上生长CdTe层的方法。用于生长的溶液包括具有少量CdTe的Sn和Hg。典型的组成是Sn：Hg：CdTe = 36:5:0.15重量份。生长温度是溶液中CdTe量的函数。对于所述的典型组成，生长温度为约520℃。将层在（111）A取向的CdTe底物上生长。首先生长具有所需Cd组成的HgCdTe外延层，随后在HgCdTe外延层上生长CdTe的外延层。 CdTe / Hg1-xCdxTe界面的交叉扩散对于薄的CdTe外延层来说已经小到0.3μm。已经证明了在77°K下对于差异敏感的第一CdTe / HgCdTe异质结为2.8μm。

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