专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07663131B2 SyAF structure to fabricate Mbit MTJ MRAM 有权
标题翻译： SyAF结构制造Mbit MTJ MRAM
公开(公告)号：US07663131B2
公开(公告)日：2010-02-16
申请号：US11715728
申请日：2007-03-08
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Guangli Liu
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Guangli Liu
IPC分类号： H01L47/00
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm2 for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co60Fe20B20 layer and an upper crystalline Co75Fe25 layer to promote a smoother and more uniform AlOx tunnel barrier. A “stronger oxidation” state is realized in the AlOx layer by depositing a thicker than normal Al layer or extending the ROX cycle time for Al oxidation and thereby reduces tunneling hot spots. The NiFe free layer has a low Fe content of about 8 to 21 atomic % and the Hf content in the NiFeHf capping layer is from 10 to 25 atomic %. A Ta hard mask is formed on the capping layer. EC (best) is reduced from >100 ppm to
摘要翻译：公开了一种在1兆比特MRAM器件实现高MR值，低磁致伸缩以及约1100Ωm2的RA的情况下最小化误差计数（EC）的MTJ。 MTJ具有由较低的非晶Co60Fe20B20层和上层结晶Co75Fe25层制成的复合AP1钉扎层，以促进更平滑和更均匀的AlOx隧道势垒。在AlOx层中通过沉积比正常的Al层更厚或者延长了用于Al氧化的ROX循环时间，从而减少了隧道热点，实现了“更强的氧化”状态。 NiFe自由层的Fe含量低，为约8〜21原子％，NiFeHf覆盖层的Hf含量为10〜25原子％。在封盖层上形成Ta硬掩模。通过使用优选的MTJ构型，EC（最佳）从> 100ppm降低到<10ppm。

2. 发明申请

US20080217710A1 Novel SyAF structure to fabricate Mbit MTJ MRAM 有权
标题翻译：新型SyAF结构制造Mbit MTJ MRAM
公开(公告)号：US20080217710A1
公开(公告)日：2008-09-11
申请号：US11715728
申请日：2007-03-08
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Guangli Liu
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Guangli Liu
IPC分类号： H01L43/00
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm2 for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co60Fe20B20 layer and an upper crystalline Co75Fe25 layer to promote a smoother and more uniform AlOx tunnel barrier. A “stronger oxidation” state is realized in the AlOx layer by depositing a thicker than normal Al layer or extending the ROX cycle time for Al oxidation and thereby reduces tunneling hot spots. The NiFe free layer has a low Fe content of about 8 to 21 atomic % and the Hf content in the NiFeHf capping layer is from 10 to 25 atomic %. A Ta hard mask is formed on the capping layer. EC (best) is reduced from >100 ppm to
摘要翻译：公开了一种MTJ，其对于1Mbit MRAM器件实现了对MR值的高MR值，低磁致伸缩以及RA约为1100Ωm2的最小化误差计数（EC）。 MTJ具有由较低的无定形Co 60 Fe 20 B 20 O 20层制成的复合AP1钉扎层和上部结晶Co 75 Fe 2 O 3层以促进更平滑和更均匀的AlO x隧道势垒。在AlOx层中通过沉积比正常的Al层更厚或者延长了用于Al氧化的ROX循环时间，从而减少了隧道热点，实现了“更强的氧化”状态。 NiFe自由层的Fe含量低，为约8〜21原子％，NiFeHf覆盖层的Hf含量为10〜25原子％。在封盖层上形成Ta硬掩模。通过使用优选的MTJ构型，EC（最佳）从> 100ppm降低到<10ppm。

3. 发明授权

US08372661B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
标题翻译：用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US08372661B2
公开(公告)日：2013-02-12
申请号：US11981127
申请日：2007-10-31
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

4. 发明申请

US20100258889A1 High performance MTJ elements for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US20100258889A1
公开(公告)日：2010-10-14
申请号：US12803191
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： An STT-MTJ MRAM cell utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a composite tri-layer free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译： STT-MTJ MRAM单元利用自旋角动量的传递作为改变自由层的磁矩方向的机构。电池包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，复合三层自由层其包括分别在3和6埃厚度的Fe的两个结晶层之间形成的约20埃厚度的Co60Fe20B20的非晶层。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

5. 发明申请

US20080088986A1 Hafnium doped cap and free layer for MRAM device 有权
标题翻译：铪掺杂帽和MRAM器件的自由层
公开(公告)号：US20080088986A1
公开(公告)日：2008-04-17
申请号：US11582244
申请日：2006-10-17
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another.
摘要翻译：描述了高性能MTJ及其制造方法。使用NiFeHf的覆盖层将氧气从自由层中吸出，从而增加了自由层 - 隧道层界面的清晰度。自由层包含两个NiFe层，它们的磁致伸缩常数是相反的，从而很大程度地相互抵消。

6. 发明授权

US06632474B1 Robust hard bias/conductor lead structures for future GMR heads 失效
标题翻译：坚固的硬偏置/导体引线结构，用于未来的GMR磁头
公开(公告)号：US06632474B1
公开(公告)日：2003-10-14
申请号：US09689932
申请日：2000-10-13
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu Jiuh Torng , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu Jiuh Torng , Ru-Ying Tong
IPC分类号： B05D512
CPC分类号： B82Y25/00 , G11B5/4853 , G11B5/486 , H01F10/324 , H01F10/3268
摘要： A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.
摘要翻译：一种形成具有高导电性，高硬度，高熔点，高耐蚀性和缺乏涂抹，渗出，电迁移和结节形成倾向的薄导电铅层的方法。所述引线层形成在邻接结的自旋阀型磁阻读头的硬磁纵向偏置层上，因此所述读头适合以高RPM读取高密度记录盘。

7. 发明授权

US06466418B1 Bottom spin valves with continuous spacer exchange (or hard) bias 失效
标题翻译：底部旋转阀具有连续的间隔物交换（或硬）偏置
公开(公告)号：US06466418B1
公开(公告)日：2002-10-15
申请号：US09502035
申请日：2000-02-11
申请人： Cheng T. Horng , Min Li , Simon H. Liao , Ru-Ying Tong , Chyu Jiuh Torng , Rongfu Xiao
发明人： Cheng T. Horng , Min Li , Simon H. Liao , Ru-Ying Tong , Chyu Jiuh Torng , Rongfu Xiao
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044
摘要： A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the method, there is provided a substrate upon which is formed a seed layer, upon which is formed an antiferromagnetic pinning layer, upon which is formed a ferromagnetic pinned layer, upon which is formed a non-magnetic spacer layer, upon which is formed a ferromagnetic free layer, upon which is formed a specularly reflecting and capping layer. The width of the sensor element is defined by a pair of conducting leads aligned upon a pair of continuous spacer exchange hard bias layers.
摘要翻译：用于形成具有连续间隔物交换硬偏置的镜面反射底部自旋阀磁阻（SVMR）传感器元件的方法和根据该方法制造的镜面反射底部自旋阀磁阻（SVMR）传感器元件。为了实现该方法，提供了一个衬底，在其上形成一种晶种层，在其上形成反铁磁钉扎层，在其上形成铁磁性钉扎层，在其上形成非磁性间隔层，形成铁磁自由层，在其上形成镜面反射和覆盖层。传感器元件的宽度由在一对连续间隔物交换硬偏压层上对准的一对导电引线限定。

8. 发明授权

US08176622B2 Process for manufacturing a magnetic tunnel junction (MTJ) device 有权
标题翻译：制造磁性隧道结（MTJ）装置的方法
公开(公告)号：US08176622B2
公开(公告)日：2012-05-15
申请号：US12657775
申请日：2010-01-27
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated so that oxygen trapped in the free layer diffuses into the NiFeHf layer, thereby sharpening the interface between the tunnel barrier layer and the free layer.
摘要翻译：描述了一种用于制造高性能MTJ的方法：将NiFeHf的第一覆盖层沉积在自由层上，随后是Ta上的Ru的第二盖层。然后加热该装置，使得在自由层中捕获的氧气扩散到NiFeHf层中，从而锐化隧道势垒层和自由层之间的界面。

9. 发明授权

US08058698B2 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08058698B2
公开(公告)日：2011-11-15
申请号：US12803189
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that is an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer has a low Gilbert damping factor and a very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用转移自旋角动量作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元。该器件包括形成在钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，是非晶形的自由层分别在3和6埃厚度的Fe的两个结晶层之间形成大约20埃厚度的Co60Fe20B20层。自由层具有低的吉尔伯特衰减因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

10. 发明授权

US07630176B2 Seed layer for fabricating spin valve heads for ultra-high density recordings 有权
标题翻译：用于制造用于超高密度记录的自旋阀头的种子层
公开(公告)号：US07630176B2
公开(公告)日：2009-12-08
申请号：US11804271
申请日：2007-05-17
申请人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
发明人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
摘要翻译：一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in2的记录介质。此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式