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1. 发明授权

US06632474B1 Robust hard bias/conductor lead structures for future GMR heads 失效
标题翻译：坚固的硬偏置/导体引线结构，用于未来的GMR磁头
公开(公告)号：US06632474B1
公开(公告)日：2003-10-14
申请号：US09689932
申请日：2000-10-13
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu Jiuh Torng , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu Jiuh Torng , Ru-Ying Tong
IPC分类号： B05D512
CPC分类号： B82Y25/00 , G11B5/4853 , G11B5/486 , H01F10/324 , H01F10/3268
摘要： A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.
摘要翻译：一种形成具有高导电性，高硬度，高熔点，高耐蚀性和缺乏涂抹，渗出，电迁移和结节形成倾向的薄导电铅层的方法。所述引线层形成在邻接结的自旋阀型磁阻读头的硬磁纵向偏置层上，因此所述读头适合以高RPM读取高密度记录盘。

2. 发明授权

US06306311B1 Method to make a high data rate stitched writer for a giant magneto-resistive head 失效
标题翻译：为巨型磁阻头制作高数据速率缝合笔记的方法
公开(公告)号：US06306311B1
公开(公告)日：2001-10-23
申请号：US09431237
申请日：1999-11-01
申请人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
发明人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3146 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49021 , Y10T29/49025 , Y10T29/49032
摘要： A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.
摘要翻译：组合溅射和电镀高磁矩材料的高数据速率缝合磁极读/写头及其制造方法。该制造的电镀和缝合方面允许形成非常窄的写入头，而溅射允许使用具有高电阻率和低矫顽力的高磁矩材料。

3. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

4. 发明授权

US06583966B2 Method to make a high data rate stitched writer for a giant magneto-resistive head 失效
标题翻译：为巨型磁阻头制作高数据速率缝合笔记的方法
公开(公告)号：US06583966B2
公开(公告)日：2003-06-24
申请号：US09956360
申请日：2001-09-20
申请人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
发明人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
IPC分类号： G11B5139
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3146 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49021 , Y10T29/49025 , Y10T29/49032
摘要： A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.
摘要翻译：组合溅射和电镀高磁矩材料的高数据速率缝合磁极读/写头及其制造方法。该制造的电镀和缝合方面允许形成非常窄的写入头，而溅射允许使用具有高电阻率和低矫顽力的高磁矩材料。

5. 发明授权

US6103136A Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) 失效
公开(公告)号：US6103136A
公开(公告)日：2000-08-15
申请号：US46007
申请日：1998-03-23
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
IPC分类号： G01R33/09 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

6. 发明授权

US06466418B1 Bottom spin valves with continuous spacer exchange (or hard) bias 失效
标题翻译：底部旋转阀具有连续的间隔物交换（或硬）偏置
公开(公告)号：US06466418B1
公开(公告)日：2002-10-15
申请号：US09502035
申请日：2000-02-11
申请人： Cheng T. Horng , Min Li , Simon H. Liao , Ru-Ying Tong , Chyu Jiuh Torng , Rongfu Xiao
发明人： Cheng T. Horng , Min Li , Simon H. Liao , Ru-Ying Tong , Chyu Jiuh Torng , Rongfu Xiao
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044
摘要： A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the method, there is provided a substrate upon which is formed a seed layer, upon which is formed an antiferromagnetic pinning layer, upon which is formed a ferromagnetic pinned layer, upon which is formed a non-magnetic spacer layer, upon which is formed a ferromagnetic free layer, upon which is formed a specularly reflecting and capping layer. The width of the sensor element is defined by a pair of conducting leads aligned upon a pair of continuous spacer exchange hard bias layers.
摘要翻译：用于形成具有连续间隔物交换硬偏置的镜面反射底部自旋阀磁阻（SVMR）传感器元件的方法和根据该方法制造的镜面反射底部自旋阀磁阻（SVMR）传感器元件。为了实现该方法，提供了一个衬底，在其上形成一种晶种层，在其上形成反铁磁钉扎层，在其上形成铁磁性钉扎层，在其上形成非磁性间隔层，形成铁磁自由层，在其上形成镜面反射和覆盖层。传感器元件的宽度由在一对连续间隔物交换硬偏压层上对准的一对导电引线限定。

7. 发明授权

US07288281B2 CPP spin valve with ultra-thin CoFe(50%) laminations 失效
标题翻译： CPP自旋阀具有超薄CoFe（50％）叠片
公开(公告)号：US07288281B2
公开(公告)日：2007-10-30
申请号：US10933031
申请日：2004-09-02
申请人： Min Li , Kunliang Zhang , Cheng T. Horng , Chyu Jiuh Torng , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Kunliang Zhang , Cheng T. Horng , Chyu Jiuh Torng , Yu-Hsia Chen , Ru-Ying Tong
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper layers. Ultra-thin layers of iron-rich CoFe are then inserted at all the copper-CoFe interfaces.
摘要翻译： FeFe CoFe可用于AP1，以提高CPP GMR。然而，这被发现降低了器件的电迁移性能。通过使用作为多层CoFe（25％）层的层叠体的AP1，通过铜层彼此分离，解决了该问题。然后在所有铜 - 钴Fe界面上插入超薄的富铁CoFe层。

8. 发明申请

US20120181537A1 Magnetic Tunnel Junction for MRAM applications 有权
标题翻译： MRAM应用的磁隧道结
公开(公告)号：US20120181537A1
公开(公告)日：2012-07-19
申请号：US12930877
申请日：2011-01-19
申请人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L29/82 , H01L21/36 , H01L29/04
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic %. NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。结晶层是厚度至少为6埃的Fe，Ni或FeB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％的Mg，Hf，Zr，Nb或Ta。 NiFeX厚度优选在20至40埃之间，以显着减少位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。在300℃至360℃退火，提供约150％的高磁阻比。

9. 发明授权

US08786036B2 Magnetic tunnel junction for MRAM applications 有权
标题翻译：用于MRAM应用的磁隧道结
公开(公告)号：US08786036B2
公开(公告)日：2014-07-22
申请号：US12930877
申请日：2011-01-19
申请人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L43/10 , H01L27/22
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FEB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic % NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiments, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。结晶层是厚度至少为6埃的Fe，Ni或FEB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％NiFeX厚度的Mg，Hf，Zr，Nb或Ta优选为20〜40埃，以显着降低位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。在300℃至360℃退火，提供约150％的高磁阻比。

10. 发明申请

US20110062536A1 Design and fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory 有权
标题翻译：部分包层写入线的设计和制造方法，以增强磁随机存取存储器的写入裕度
公开(公告)号：US20110062536A1
公开(公告)日：2011-03-17
申请号：US12584952
申请日：2009-09-15
申请人： Tai Min , Wai-Ming J. Kan , David E. Heim , Chyu Jiuh Torng
发明人： Tai Min , Wai-Ming J. Kan , David E. Heim , Chyu Jiuh Torng
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01L43/08 , H01L43/12
摘要： A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.
摘要翻译：公开了用于切换MTJ中的自由层的用于导电线的包层结构，并且在导电线的两侧包括两个包层侧壁，在远离MTJ的导电线侧的顶部包层部分，以及在MTJ和导线之间形成的高导电性，非磁性间隔控制层。间隔控制层的厚度为0.02至0.12微米，以保持分离自由层和导电线之间的距离在0.03和0.15微米之间。间隔控制层平行于导线对准，并接触一排MRAM单元中的多个MTJ元件。避免半选择错误问题，同时保持较高的写入效率。间隔控制层可以形成在顶部钉扎层或双重钉扎层构造中的字线和底部电极之间。

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