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1. 发明申请

US20050041339A1 Structure and process to fabricate lead overlay (LOL) on the bottom spin valve 失效
标题翻译：在底部自旋阀上制造铅覆盖层（LOL）的结构和工艺
公开(公告)号：US20050041339A1
公开(公告)日：2005-02-24
申请号：US10922540
申请日：2004-08-20
申请人： Cheng Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

2. 发明授权

US07050273B2 Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon 失效
标题翻译：底部旋转阀传感器，其上制造有铅覆盖（LOL）结构
公开(公告)号：US07050273B2
公开(公告)日：2006-05-23
申请号：US10922540
申请日：2004-08-20
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

3. 发明授权

US06785954B2 Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor 失效
标题翻译：在底部自旋阀GMR读取传感器上制造引线覆盖层（LOL）的方法
公开(公告)号：US06785954B2
公开(公告)日：2004-09-07
申请号：US10124004
申请日：2002-04-17
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

4. 发明授权

US06632474B1 Robust hard bias/conductor lead structures for future GMR heads 失效
标题翻译：坚固的硬偏置/导体引线结构，用于未来的GMR磁头
公开(公告)号：US06632474B1
公开(公告)日：2003-10-14
申请号：US09689932
申请日：2000-10-13
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu Jiuh Torng , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu Jiuh Torng , Ru-Ying Tong
IPC分类号： B05D512
CPC分类号： B82Y25/00 , G11B5/4853 , G11B5/486 , H01F10/324 , H01F10/3268
摘要： A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.
摘要翻译：一种形成具有高导电性，高硬度，高熔点，高耐蚀性和缺乏涂抹，渗出，电迁移和结节形成倾向的薄导电铅层的方法。所述引线层形成在邻接结的自旋阀型磁阻读头的硬磁纵向偏置层上，因此所述读头适合以高RPM读取高密度记录盘。

5. 发明授权

US07061730B2 Robust hard bias/conductor lead structures for future GMR heads 失效
标题翻译：坚固的硬偏置/导体引线结构，用于未来的GMR磁头
公开(公告)号：US07061730B2
公开(公告)日：2006-06-13
申请号：US10649456
申请日：2003-08-27
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu-Jiuh Torng , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Chyu-Jiuh Torng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G11B5/4853 , G11B5/486 , H01F10/324 , H01F10/3268
摘要： A spin-valve magnetoresistive read element has a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.
摘要翻译：自旋阀磁阻读取元件具有导电性高，硬度高，熔点高，耐腐蚀性高，缺乏涂抹，渗出，电迁移和结核形成倾向的薄导电铅层。所述引线层形成在接触自旋阀型磁阻读取头的硬磁纵向偏置层上，因此所述读头适用于以高RPM读取高密度记录盘。

6. 发明申请

US20070223151A1 Novel seed layer for fabricating spin valve heads for ultra-high density recordings 有权
标题翻译：用于制造用于超高密度记录的自旋阀头的新型种子层
公开(公告)号：US20070223151A1
公开(公告)日：2007-09-27
申请号：US11804241
申请日：2007-05-17
申请人： Cheng Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
发明人： Cheng Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
摘要翻译：一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

7. 发明授权

US07630176B2 Seed layer for fabricating spin valve heads for ultra-high density recordings 有权
标题翻译：用于制造用于超高密度记录的自旋阀头的种子层
公开(公告)号：US07630176B2
公开(公告)日：2009-12-08
申请号：US11804271
申请日：2007-05-17
申请人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
发明人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
摘要翻译：一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in2的记录介质。此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

8. 发明申请

US20070220740A1 Novel seed layer for fabricating spin valve heads for ultra-high density recordings 有权
公开(公告)号：US20070220740A1
公开(公告)日：2007-09-27
申请号：US11804271
申请日：2007-05-17
申请人： C.T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
发明人： C.T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
IPC分类号： G11B5/127 , G11B5/147
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

9. 发明申请

US20050264954A1 Free layer for CPP GMR having iron rich NiFe 失效
标题翻译：自由层CPP GMR具有铁丰富的NiFe
公开(公告)号：US20050264954A1
公开(公告)日：2005-12-01
申请号：US10854651
申请日：2004-05-26
申请人： Min Li , Cheng Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
发明人： Min Li , Cheng Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33 , H01F10/32 , H01F41/30 , H01L43/08 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3929 , G11B2005/3996 , H01F10/3272 , H01F41/302 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
摘要翻译：通过使用包含含有65至72原子％铁的NiFe层的自由层，已经创建了改进的CPP GMR器件。所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。还描述了用于制造该装置的方法。

10. 发明授权

US08372661B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
标题翻译：用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US08372661B2
公开(公告)日：2013-02-12
申请号：US11981127
申请日：2007-10-31
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

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