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    • 10. 发明授权
    • High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
    • 用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
    • US08372661B2
    • 2013-02-12
    • US11981127
    • 2007-10-31
    • Cheng T. HorngRu-Ying TongChyu-Jiuh TorngWitold Kula
    • Cheng T. HorngRu-Ying TongChyu-Jiuh TorngWitold Kula
    • H01L21/00
    • H01L43/10B82Y10/00H01L27/228H01L43/08H01L43/12
    • A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
    • 公开了使自旋转移磁化开关电流(Jc)最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层,以实现低的RA(10欧姆 - um2)和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。 当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒(自由基氧化法)和CoFeB AP1钉扎层的Fe,FeB或Fe / CoFeB / Fe自由层时,提供高dR / R(TMR )> 100%,TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示,用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。