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    • 7. 发明申请
    • [THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PHOTOLITHOGRAPHY PROCESS AND DESIGN OF THE MASK THEREOF]
    • [薄膜晶体管阵列基板和光刻机的工艺及其掩模的设计]
    • US20050040399A1
    • 2005-02-24
    • US10708209
    • 2004-02-17
    • Tai-Yu KuoTung-Tsun LinHsu-Ping Tseng
    • Tai-Yu KuoTung-Tsun LinHsu-Ping Tseng
    • H01L21/77H01L21/84H01L27/12H01L29/04
    • H01L27/1288G03F7/70475H01L27/1296
    • A thin film transistor array substrate, a photolithography process and a design of a mask thereof are provided. A photoresist layer is formed on a substrate, and a mask is set above the substrate. Then, the display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. After that, the non-display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. Finally, a development process is performed to pattern the photoresist layer. Wherein a plurality of pixel patterns is formed in the photoresist layer corresponding to the display element area, and a plurality of peripheral circuit patterns and a plurality of stitching pixel pattern are formed in the photoresist layer corresponding to the non-display element area. Moreover, each one of the stitching pixel patterns is connected to the corresponding pixel patterns.
    • 提供薄膜晶体管阵列基板,光刻工艺及其掩模的设计。 在基板上形成光致抗蚀剂层,将掩模设置在基板的上方。 然后,阻挡掩模的显示元件区域,以对光致抗蚀剂层进行曝光处理。 之后,掩模的非显示元件区域被阻挡,以便对光致抗蚀剂层进行曝光处理。 最后,进行显影处理以对光致抗蚀剂层进行图案化。 其中在对应于显示元件区域的光致抗蚀剂层中形成多个像素图案,并且在对应于非显示元件区域的光致抗蚀剂层中形成多个外围电路图案和多个缝合像素图案。 此外,拼接像素图案中的每一个连接到相应的像素图案。
    • 8. 发明授权
    • Thin film transistor array substrate and photolithography process and design of the mask thereof
    • 薄膜晶体管阵列基板和光刻工艺及其掩模设计
    • US06917053B2
    • 2005-07-12
    • US10708209
    • 2004-02-17
    • Tai-Yu KuoTung-Tsun LinHsu-Ping Tseng
    • Tai-Yu KuoTung-Tsun LinHsu-Ping Tseng
    • H01L21/77H01L21/84H01L27/12H01L29/04H01L31/036
    • H01L27/1288G03F7/70475H01L27/1296
    • A thin film transistor array substrate, a photolithography process and a design of a mask thereof are provided. A photoresist layer is formed on a substrate, and a mask is set above the substrate. Then, the display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. After that, the non-display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. Finally, a development process is performed to pattern the photoresist layer. Wherein a plurality of pixel patterns is formed in the photoresist layer corresponding to the display element area, and a plurality of peripheral circuit patterns and a plurality of stitching pixel pattern are formed in the photoresist layer corresponding to the non-display element area. Moreover, each one of the stitching pixel patterns is connected to the corresponding pixel patterns.
    • 提供薄膜晶体管阵列基板,光刻工艺及其掩模的设计。 在基板上形成光致抗蚀剂层,将掩模设置在基板的上方。 然后,阻挡掩模的显示元件区域,以对光致抗蚀剂层进行曝光处理。 之后,掩模的非显示元件区域被阻挡,以便对光致抗蚀剂层进行曝光处理。 最后,进行显影处理以对光致抗蚀剂层进行图案化。 其中在对应于显示元件区域的光致抗蚀剂层中形成多个像素图案,并且在对应于非显示元件区域的光致抗蚀剂层中形成多个外围电路图案和多个缝合像素图案。 此外,拼接像素图案中的每一个连接到相应的像素图案。