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1. 发明授权

US06917053B2 Thin film transistor array substrate and photolithography process and design of the mask thereof 有权
标题翻译：薄膜晶体管阵列基板和光刻工艺及其掩模设计
公开(公告)号：US06917053B2
公开(公告)日：2005-07-12
申请号：US10708209
申请日：2004-02-17
申请人： Tai-Yu Kuo , Tung-Tsun Lin , Hsu-Ping Tseng
发明人： Tai-Yu Kuo , Tung-Tsun Lin , Hsu-Ping Tseng
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L31/036
CPC分类号： H01L27/1288 , G03F7/70475 , H01L27/1296
摘要： A thin film transistor array substrate, a photolithography process and a design of a mask thereof are provided. A photoresist layer is formed on a substrate, and a mask is set above the substrate. Then, the display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. After that, the non-display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. Finally, a development process is performed to pattern the photoresist layer. Wherein a plurality of pixel patterns is formed in the photoresist layer corresponding to the display element area, and a plurality of peripheral circuit patterns and a plurality of stitching pixel pattern are formed in the photoresist layer corresponding to the non-display element area. Moreover, each one of the stitching pixel patterns is connected to the corresponding pixel patterns.
摘要翻译：提供薄膜晶体管阵列基板，光刻工艺及其掩模的设计。在基板上形成光致抗蚀剂层，将掩模设置在基板的上方。然后，阻挡掩模的显示元件区域，以对光致抗蚀剂层进行曝光处理。之后，掩模的非显示元件区域被阻挡，以便对光致抗蚀剂层进行曝光处理。最后，进行显影处理以对光致抗蚀剂层进行图案化。其中在对应于显示元件区域的光致抗蚀剂层中形成多个像素图案，并且在对应于非显示元件区域的光致抗蚀剂层中形成多个外围电路图案和多个缝合像素图案。此外，拼接像素图案中的每一个连接到相应的像素图案。

2. 发明申请

US20050040399A1 [THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PHOTOLITHOGRAPHY PROCESS AND DESIGN OF THE MASK THEREOF] 有权
标题翻译： [薄膜晶体管阵列基板和光刻机的工艺及其掩模的设计]
公开(公告)号：US20050040399A1
公开(公告)日：2005-02-24
申请号：US10708209
申请日：2004-02-17
申请人： Tai-Yu Kuo , Tung-Tsun Lin , Hsu-Ping Tseng
发明人： Tai-Yu Kuo , Tung-Tsun Lin , Hsu-Ping Tseng
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04
CPC分类号： H01L27/1288 , G03F7/70475 , H01L27/1296
摘要： A thin film transistor array substrate, a photolithography process and a design of a mask thereof are provided. A photoresist layer is formed on a substrate, and a mask is set above the substrate. Then, the display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. After that, the non-display element area of the mask is blocked in order to perform the exposure process to the photoresist layer. Finally, a development process is performed to pattern the photoresist layer. Wherein a plurality of pixel patterns is formed in the photoresist layer corresponding to the display element area, and a plurality of peripheral circuit patterns and a plurality of stitching pixel pattern are formed in the photoresist layer corresponding to the non-display element area. Moreover, each one of the stitching pixel patterns is connected to the corresponding pixel patterns.
摘要翻译：提供薄膜晶体管阵列基板，光刻工艺及其掩模的设计。在基板上形成光致抗蚀剂层，将掩模设置在基板的上方。然后，阻挡掩模的显示元件区域，以对光致抗蚀剂层进行曝光处理。之后，掩模的非显示元件区域被阻挡，以便对光致抗蚀剂层进行曝光处理。最后，进行显影处理以对光致抗蚀剂层进行图案化。其中在对应于显示元件区域的光致抗蚀剂层中形成多个像素图案，并且在对应于非显示元件区域的光致抗蚀剂层中形成多个外围电路图案和多个缝合像素图案。此外，拼接像素图案中的每一个连接到相应的像素图案。

3. 发明授权

US06605495B1 Method of forming a thin film transistor liquid crystal display 有权
标题翻译：形成薄膜晶体管液晶显示器的方法
公开(公告)号：US06605495B1
公开(公告)日：2003-08-12
申请号：US10248441
申请日：2003-01-21
申请人： Tai-Yu Kuo
发明人： Tai-Yu Kuo
IPC分类号： H01L2100
CPC分类号： G02F1/136259 , G02F2001/136254 , G02F2001/136268 , H01L27/124 , H01L29/4908 , H01L29/66765
摘要： A method of forming a thin film transistor liquid crystal display includes forming a gate, a scan line and two first repair pads on a substrate first. A dielectric layer, a semiconductor layer, an etching stop layer and a metal layer are thereafter formed. After that, the metal layer and the semiconductor layer are etched to form a signal line and a source/drain. A passivation layer is formed and portions of the drain are exposed. Finally, a pixel electrode is formed and a second repair pad on top of each of the first repair pads is formed to form a repair circuit.
摘要翻译：形成薄膜晶体管液晶显示器的方法包括首先在衬底上形成栅极，扫描线和两个第一修复焊盘。此后形成电介质层，半导体层，蚀刻停止层和金属层。之后，蚀刻金属层和半导体层以形成信号线和源极/漏极。形成钝化层，露出部分漏极。最后，形成像素电极，并且形成每个第一修复焊盘顶部的第二修复焊盘以形成修复电路。

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