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    • 1. 发明授权
    • Method of patterning lead zirconium titanate and barium strontium titanate
    • 图案化钛酸锆钛酸钡和钛酸钡锶的方法
    • US06436838B1
    • 2002-08-20
    • US09556078
    • 2000-04-21
    • Chen Tsan YingJeng H. HwangHideyuki YamauchiSeayoul ParkYohei Kawase
    • Chen Tsan YingJeng H. HwangHideyuki YamauchiSeayoul ParkYohei Kawase
    • H01L21302
    • H01L21/31122H01L21/31691
    • In an embodiment of the present invention, a method is provided of patterning PZT layers or BST layers. For example, a PZT layer or a BST layer is plasma etched through a high-temperature-compatible mask such as a titanium nitride (TiN) mask, using a plasma feed gas comprising as a primary etchant boron trichloride (BCl3) or silicon tetrachloride (SiCi4). Although BCl3 or SiCl4 may be used alone as the etchant plasma source gas, it is typically used in combination with an essentially inert gas. Preferably the essentially inert gas is argon. Other potential essentially inert gases which may be used include xenon, krypton, and helium. In some instances O2 or N2, or Cl2, or a combination thereof may be added to the primary etchant to increase the etch rate of PZT or BST relative to adjacent materials, such as the high-temperature-compatible masking material. A TiN masking material can easily be removed without damaging underlying oxides. The selectivity of PZT or BST relative to TiN is very good, with the ratio of the etch rate of the PZT film to the etch rate of the TiN mask typically being better than 20:1. In addition, the etch rate for PZT using a BCl3—comprising plasma source gas is typically in excess of 2,000 Å per minute. A substrate bias power is applied to direct ions produced from the BCl3 or SiCl4 toward the surface to be etched. The bias power is controlled to avoid sputtering of a conductive layer or layers in contact with the PZT layer, so that the surface of the etched PZT is not contaminated by a conductive material, which can cause the semiconductor device which includes the patterned PZT to short out.
    • 在本发明的一个实施例中,提供了一种图案化PZT层或BST层的方法。 例如,使用包含作为主要蚀刻剂三氯化硼(BCl 3)或四氯化硅(BCl 3)的等离子体进料气体,通过诸如氮化钛(TiN)掩模的高温兼容掩模等离子体蚀刻PZT层或BST层 SiCi4)。 尽管BCl 3或SiCl 4可以单独用作蚀刻剂等离子体源气体,但通常与基本上惰性气体组合使用。 优选地,基本上惰性的气体是氩气。 可以使用的其它潜在的基本上惰性的气体包括氙,氪和氦。 在一些情况下,可以向初级蚀刻剂中加入O 2或N 2或Cl 2或其组合以增加PZT或BST相对于相邻材料(例如高温兼容掩蔽材料)的蚀刻速率。 可以容易地去除TiN掩模材料而不损坏潜在的氧化物。 PZT或BST相对于TiN的选择性非常好,PZT膜的蚀刻速率与TiN掩模的蚀刻速率之比通常优于20:1。 此外,使用含有BCl3的等离子体源气体的PZT的蚀刻速率通常超过每分钟2000埃。 施加衬底偏置功率以将从BCl 3或SiCl 4产生的离子导向待蚀刻的表面。 控制偏置功率以避免溅射与PZT层接触的导电层,使得蚀刻的PZT的表面不被导电材料污染,这可导致包括图案化PZT的半导体器件短路 出来
    • 4. 发明授权
    • Reliable burst signal detecting apparatus
    • 可靠的突发信号检测装置
    • US5701296A
    • 1997-12-23
    • US599353
    • 1996-02-09
    • Hideyuki Yamauchi
    • Hideyuki Yamauchi
    • H04L5/16H03K5/1534H04L7/00H04L7/033
    • H03K5/1534H04L7/033
    • In a burst signal detecting apparatus, a first circuit is provided to detect a falling edge in a burst signal to generate a first pulse signal when a low level of the burst signal continues for a time period after the falling edge is detected in the burst signal. Also, a second circuit is provided to detect a rising edge in a burst signal to generate a second pulse signal when a high level of the burst signal continues for the time period after the rising edge is detected in the burst signal. The first pulse signal is logically combined with the second pulse signal to generate a burst signal detection signal. Each of the time periods is smaller than a minimum time period of one bit of the burst signal. The pulse width of each of the first and second pulse signals is longer than a time period of a predetermined number of bits of the burst signal.
    • 在突发信号检测装置中,提供第一电路以在突发信号中检测到下降沿之后的一段时间内,当突发信号的低电平持续一段时间时,检测突发信号中的下降沿,以产生第一脉冲信号 。 而且,当在突发信号中检测到上升沿之后的时间周期期间,当突发信号的高电平持续时,提供第二电路以检测突发信号中的上升沿以产生第二脉冲信号。 第一脉冲信号与第二脉冲信号逻辑组合以产生脉冲串信号检测信号。 每个时间周期小于突发信号的一位的最小时间周期。 第一和第二脉冲信号中的每一个的脉冲宽度比突发信号的预定位数的时间段长。