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1. 发明授权

US06436838B1 Method of patterning lead zirconium titanate and barium strontium titanate 失效
标题翻译：图案化钛酸锆钛酸钡和钛酸钡锶的方法
公开(公告)号：US06436838B1
公开(公告)日：2002-08-20
申请号：US09556078
申请日：2000-04-21
申请人： Chen Tsan Ying , Jeng H. Hwang , Hideyuki Yamauchi , Seayoul Park , Yohei Kawase
发明人： Chen Tsan Ying , Jeng H. Hwang , Hideyuki Yamauchi , Seayoul Park , Yohei Kawase
IPC分类号： H01L21302
CPC分类号： H01L21/31122 , H01L21/31691
摘要： In an embodiment of the present invention, a method is provided of patterning PZT layers or BST layers. For example, a PZT layer or a BST layer is plasma etched through a high-temperature-compatible mask such as a titanium nitride (TiN) mask, using a plasma feed gas comprising as a primary etchant boron trichloride (BCl3) or silicon tetrachloride (SiCi4). Although BCl3 or SiCl4 may be used alone as the etchant plasma source gas, it is typically used in combination with an essentially inert gas. Preferably the essentially inert gas is argon. Other potential essentially inert gases which may be used include xenon, krypton, and helium. In some instances O2 or N2, or Cl2, or a combination thereof may be added to the primary etchant to increase the etch rate of PZT or BST relative to adjacent materials, such as the high-temperature-compatible masking material. A TiN masking material can easily be removed without damaging underlying oxides. The selectivity of PZT or BST relative to TiN is very good, with the ratio of the etch rate of the PZT film to the etch rate of the TiN mask typically being better than 20:1. In addition, the etch rate for PZT using a BCl3—comprising plasma source gas is typically in excess of 2,000 Å per minute. A substrate bias power is applied to direct ions produced from the BCl3 or SiCl4 toward the surface to be etched. The bias power is controlled to avoid sputtering of a conductive layer or layers in contact with the PZT layer, so that the surface of the etched PZT is not contaminated by a conductive material, which can cause the semiconductor device which includes the patterned PZT to short out.
摘要翻译：在本发明的一个实施例中，提供了一种图案化PZT层或BST层的方法。例如，使用包含作为主要蚀刻剂三氯化硼（BCl 3）或四氯化硅（BCl 3）的等离子体进料气体，通过诸如氮化钛（TiN）掩模的高温兼容掩模等离子体蚀刻PZT层或BST层 SiCi4）。尽管BCl 3或SiCl 4可以单独用作蚀刻剂等离子体源气体，但通常与基本上惰性气体组合使用。优选地，基本上惰性的气体是氩气。可以使用的其它潜在的基本上惰性的气体包括氙，氪和氦。在一些情况下，可以向初级蚀刻剂中加入O 2或N 2或Cl 2或其组合以增加PZT或BST相对于相邻材料（例如高温兼容掩蔽材料）的蚀刻速率。可以容易地去除TiN掩模材料而不损坏潜在的氧化物。 PZT或BST相对于TiN的选择性非常好，PZT膜的蚀刻速率与TiN掩模的蚀刻速率之比通常优于20：1。此外，使用含有BCl3的等离子体源气体的PZT的蚀刻速率通常超过每分钟2000埃。施加衬底偏置功率以将从BCl 3或SiCl 4产生的离子导向待蚀刻的表面。控制偏置功率以避免溅射与PZT层接触的导电层，使得蚀刻的PZT的表面不被导电材料污染，这可导致包括图案化PZT的半导体器件短路出来

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