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    • 4. 发明申请
    • Thin-film transistor and diode array for an imager panel or the like
    • 用于成像器面板的薄膜晶体管和二极管阵列等
    • US20070122948A1
    • 2007-05-31
    • US11291602
    • 2005-11-30
    • Ching-Yeu WeiDouglas AlbagliWilliam Hennessy
    • Ching-Yeu WeiDouglas AlbagliWilliam Hennessy
    • H01L33/00H01L21/84
    • H01L27/1214H01L27/14663H01L31/115
    • Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.
    • 简而言之,根据一个或多个实施例,可以从与薄膜晶体管阵列集成的光电二极管阵列产生成像系统的检测器面板。 薄膜晶体管阵列可以具有形成的一个或多个通孔,用于增加光电二极管阵列与薄膜晶体管阵列的粘附。 通孔可以包括具有阶梯结构的侧壁。 薄膜晶体管阵列可以包括第一金属化层和第二金属化层。 第三金属化层可以添加到薄膜晶体管阵列中,其中光电二极管阵列的二极管可以接触第三金属化层。 光电二极管阵列的二极管可以经由第三金属化层与第一金属化层和/或第二金属化层接触而不直接接触第一金属化层或第二金属化层。
    • 6. 发明授权
    • Thin-film transistor and diode array for an imager panel or the like
    • 用于成像器面板的薄膜晶体管和二极管阵列等
    • US07759680B2
    • 2010-07-20
    • US11291602
    • 2005-11-30
    • Ching-Yeu WeiDouglas AlbagliWilliam Hennessy
    • Ching-Yeu WeiDouglas AlbagliWilliam Hennessy
    • H01L31/00
    • H01L27/1214H01L27/14663H01L31/115
    • Briefly, in accordance with one or more embodiments, a detector panel of an imaging system may be produced from a photodiode array integrated with a thin-film transistor array. The thin film transistor array may have one or more vias formed for increasing the adhesion of the photodiode array to the thin-film transistor array. The vias may comprise sidewalls having stepped structures. The thin-film transistor array may comprise a first metallization layer and a second metallization layer. A third metallization layer may be added to the thin film transistor array wherein diodes of the photodiode array may contact the third metallization layer. Diodes of the photodiode array may contact the first metallization layer and/or the second metallization layer via the third metallization layer without directly contacting the first metallization layer or the second metallization layer.
    • 简而言之,根据一个或多个实施例,可以从与薄膜晶体管阵列集成的光电二极管阵列产生成像系统的检测器面板。 薄膜晶体管阵列可以具有形成的一个或多个通孔,用于增加光电二极管阵列与薄膜晶体管阵列的粘附。 通孔可以包括具有阶梯结构的侧壁。 薄膜晶体管阵列可以包括第一金属化层和第二金属化层。 第三金属化层可以添加到薄膜晶体管阵列中,其中光电二极管阵列的二极管可以接触第三金属化层。 光电二极管阵列的二极管可以经由第三金属化层与第一金属化层和/或第二金属化层接触而不直接接触第一金属化层或第二金属化层。