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1. 发明授权

US5854134A Passivation layer for a metal film to prevent metal corrosion 失效
标题翻译：钝化层为金属膜防止金属腐蚀
公开(公告)号：US5854134A
公开(公告)日：1998-12-29
申请号：US851399
申请日：1997-05-05
申请人： Chao-Yi Lan , Shean-Ren Horng , Yun-Hung Shen , Hung-Jen Tsai
发明人： Chao-Yi Lan , Shean-Ren Horng , Yun-Hung Shen , Hung-Jen Tsai
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02071
摘要： The invention provides a method of fabricating corrosion free metal lines. The method involves forming a thin polymeric passivation layer 30 over the metal layer 20 immediately after the metal deposition and before any photolithographic or etching processes. The polymeric passivation layer 30 is formed using a F-containing gas plasma treatment. The passivation layer prevents corrosion of the metal layer before a metal etch. The passivation layer is preferably composed of a polymeric of C, O, and F and has a thickness in a range of between about 40 and 80 .ANG.. The passivation layer is formed using a F-containing plasma treatment at a power of between 225 and 275 W, a pressure between about 80 and 120 mtorr, a CHF.sub.3 flow between about 40 and 60 sccm and for a duration between about 10 to 30 seconds. Following this, the metal layer is patterned using photo and etch steps.
摘要翻译：本发明提供一种制造无腐蚀金属线的方法。该方法包括在金属沉积之后和在任何光刻或蚀刻工艺之前立即在金属层20上形成薄的聚合物钝化层30。使用含F气体等离子体处理形成聚合物钝化层30。钝化层在金属蚀刻之前防止金属层的腐蚀。钝化层优选由C，O和F的聚合物组成，并且具有在约40至80埃范围内的厚度。钝化层使用含氟等离子体处理形成，功率为225-275W，压力为约80至120毫托，CHF 3流量为约40至60sccm，持续时间为约10至30秒。之后，使用光刻和蚀刻步骤对金属层进行构图。

2. 发明授权

US06214717B1 Method for adding plasma treatment on bond pad to prevent bond pad staining problems 有权
标题翻译：在焊盘上加入等离子体处理以防止粘结垫染色问题的方法
公开(公告)号：US06214717B1
公开(公告)日：2001-04-10
申请号：US09192339
申请日：1998-11-16
申请人： Chao-Yi Lan , Shean-Ren Horng , Yang-Tung Fan , Chih-Kang Chiu
发明人： Chao-Yi Lan , Shean-Ren Horng , Yang-Tung Fan , Chih-Kang Chiu
IPC分类号： H01L2144
CPC分类号： H01L24/05 , H01L24/03 , H01L24/48 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/48 , H01L2224/85013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/14 , H01L2924/00 , H01L2224/45099
摘要： A method is disclosed for improving the bonding strength of wire bonds on semiconductor chips. Aluminum-silicon-copper is employed as the metal for wire bonding-pads. Openings are formed in the passivation layer over the bonding-pads. The exposed metal in the openings is treated with a fluorine containing F-plasma. A thin passivation film, with C, F, and O content is formed over the metal bonding pads. This protective film prevents the formation of pitting and staining of the bonding-pads when the wafer is subjected to repeated developing solutions during the color filter process performed for the CMOS image sensors, for example. Consequently, the wire bonds formed during the packaging of the chips are stronger and more reliable.
摘要翻译：公开了一种用于提高半导体芯片上的引线键合的结合强度的方法。使用铝硅铜作为引线接合焊盘的金属。在焊盘上的钝化层中形成开口。开口中暴露的金属用含氟F等离子体处理。在金属焊盘上形成具有C，F和O含量的薄钝化膜。例如，当在CMOS图像传感器执行的滤色器处理期间，当晶片受到重复的显影解决方案时，该保护膜防止形成接合焊盘的点蚀和染色。因此，在封装芯片期间形成的引线键更坚固，更可靠。

3. 发明授权

US06563154B1 Polysilicon layer having improved roughness after POCl3 doping 有权
标题翻译： POCl3掺杂后具有改善粗糙度的多晶硅层
公开(公告)号：US06563154B1
公开(公告)日：2003-05-13
申请号：US09208915
申请日：1998-12-10
申请人： Chun-Chieh Chang , Yu-Jen Yu , Te-Fu Tseng , Chao-Yi Lan
发明人： Chun-Chieh Chang , Yu-Jen Yu , Te-Fu Tseng , Chao-Yi Lan
IPC分类号： H01L27108
CPC分类号： H01L28/84 , H01L21/28035 , H01L21/28158 , H01L21/28273 , H01L21/823437 , H01L27/0629
摘要： An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630° C. is used. Then, when the intended thickness of polysilicon has been grown, the temperature is ramped down to about 560° C., without interrupting the deposition process, and growth of the film continues to completion. This is followed by a standard doping step using POCl3. Polysilicon films formed in this way have been found to have very smooth surfaces because the topmost layer is less subject to uncontrolled grain growth. As a consequence, dielectric layers obtained by oxidizing such films exhibit superior breakdown voltages.
摘要翻译：描述了一种用于沉积稍后形成栅极基座的多晶硅层的改进方法。沉积分两个阶段进行。首先，使用约630℃的常规沉积温度。然后，当多晶硅的预期厚度已经生长时，温度降低到约560℃，而不中断沉积过程，并且膜的生长继续完成。之后是使用POCl 3的标准掺杂步骤。已经发现以这种方式形成的多晶硅膜具有非常光滑的表面，因为最顶层较少受到不受控制的晶粒生长。因此，通过氧化这些膜获得的介电层表现出优异的击穿电压。

4. 发明授权

US5874333A Process for forming a polysilicon layer having improved roughness after POCL3 doping 失效
标题翻译：在POCL3掺杂后形成具有改善的粗糙度的多晶硅层的工艺
公开(公告)号：US5874333A
公开(公告)日：1999-02-23
申请号：US49212
申请日：1998-03-27
申请人： Chun-Chieh Chang , Yu-Jen Yu , Te-Fu Tseng , Chao-Yi Lan
发明人： Chun-Chieh Chang , Yu-Jen Yu , Te-Fu Tseng , Chao-Yi Lan
IPC分类号： H01L21/02 , H01L21/28 , H01L21/8234 , H01L27/06 , H01L21/8242
CPC分类号： H01L28/84 , H01L21/28035 , H01L21/28158 , H01L21/28273 , H01L21/823437 , H01L27/0629
摘要： An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630.degree. C. is used. Then, when the intended thickness of polysilicon has been grown, the temperature is ramped down to about 560.degree. C., without interrupting the deposition process, and growth of the film continues to completion. This is followed by a standard doping step using POCl.sub.3. Polysilicon films formed in this way have been found to have very smooth surfaces because the topmost layer is less subject to uncontrolled grain growth. As a consequence, dielectric layers obtained by oxidizing such films exhibit superior breakdown voltages.
摘要翻译：描述了一种用于沉积稍后形成栅极基座的多晶硅层的改进方法。沉积分两个阶段进行。最初，使用约630℃的常规沉积温度。然后，当多晶硅的预定厚度已经生长时，温度下降到约560℃，而不中断沉积过程，并且膜的生长继续完成。之后是使用POCl 3的标准掺杂步骤。已经发现以这种方式形成的多晶硅膜具有非常光滑的表面，因为最顶层较少受到不受控制的晶粒生长。因此，通过氧化这些膜获得的介电层表现出优异的击穿电压。

5. 发明授权

US06344369B1 Method of protecting a bond pad structure, of a color image sensor cell, during a color filter fabrication process 有权
标题翻译：在滤色器制造过程中保护彩色图像传感器单元的接合焊盘结构的方法
公开(公告)号：US06344369B1
公开(公告)日：2002-02-05
申请号：US09609673
申请日：2000-07-03
申请人： Chia-Mei Huang , Chao-Yi Lan , Hsiao-Ping Chang , Chia-Kung Chang
发明人： Chia-Mei Huang , Chao-Yi Lan , Hsiao-Ping Chang , Chia-Kung Chang
IPC分类号： H01L2100
CPC分类号： H01L27/1462 , H01L24/11 , H01L27/14621 , H01L27/14627 , H01L27/1469 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01029
摘要： A process for forming a color image sensor cell, in which a bonding pad structure is protected from exposure to alkaline developer solution, used for definition of color filter elements, and also used to open a contact hole to the bonding pad structure, has been developed. The process features the use of a passivation layer, comprised of an overlying silicon nitride layer, and an underlying silicon oxide layer, located on the top surface of the bonding pad structure. The passivation layer protects the underlying bond pad structure from alkaline developer solutions used to define overlying color filter elements, of the color image sensor cell. After definition of the color filter elements the contact hole opening to the bond pad is finalized using a dry etching procedure, applied to the passivation layer. By use of this invention the bond pad structure is protected by the passivation layer during the color filter process, preventing stain and discolouring of the bond pad structure, by the alkaline developer solution used for definition of the color filter elements, thus resulting in improvements of the mechanical properties, as well as the bondabilty properties, of bond pad structure.
摘要翻译：已经开发了用于形成彩色图像传感器单元的方法，其中保护接合焊盘结构不被暴露于碱性显影剂溶液，用于定义滤色器元件，并且还用于打开到焊盘结构的接触孔。该工艺的特征在于使用由覆盖的氮化硅层构成的钝化层和位于焊盘结构的顶表面上的下面的氧化硅层。钝化层保护底层接合焊盘结构免受用于限定彩色图像传感器单元的覆盖滤色器元件的碱性显影剂溶液的影响。在定义滤色器元件之后，使用干式蚀刻工艺来确定接合焊盘开口的接触孔，施加到钝化层。通过使用本发明，在滤色器过程期间，焊盘结构被钝化层保护，通过用于定义滤色器元件的碱性显影剂溶液防止粘合垫结构的污染和变色，从而导致改进粘结垫结构的机械性能以及粘合性能。

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