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1. 发明授权

US09142534B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09142534B2
公开(公告)日：2015-09-22
申请号：US13148544
申请日：2009-10-13
申请人： Chao-Hsing Chen , Schang-Jing Hon , Alexander Chan Wang , Li-Tian Liang , Chin-Yung Fan , Chien-Kai Chung , Min-Hsun Hsieh
发明人： Chao-Hsing Chen , Schang-Jing Hon , Alexander Chan Wang , Li-Tian Liang , Chin-Yung Fan , Chien-Kai Chung , Min-Hsun Hsieh
IPC分类号： H01L27/15 , H01L27/02 , H01L25/065 , H01L25/075 , H01L27/32 , H01L33/62
CPC分类号： H01L27/15 , H01L25/0753 , H01L27/153 , H01L27/156 , H01L27/3211 , H01L33/50 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/12032 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is provided that is capable of being directly connected to an alternative current source, including at least one electronic element; at least one light-emitting diode array chip; at least one bonding pad, a conductive trace, and a submount for supporting the electronic element, the light-emitting diode array chip, the bonding pad, and the conductive trace. The conductive trace is electrically connected to the electronic element, the light-emitting diode array chip, and bonding pad.
摘要翻译：提供了能够直接连接到包括至少一个电子元件的替代电流源的发光器件; 至少一个发光二极管阵列芯片; 至少一个接合焊盘，导电迹线和用于支撑电子元件的基座，发光二极管阵列芯片，接合焊盘和导电迹线。导电迹线电连接到电子元件，发光二极管阵列芯片和接合焊盘。

2. 发明申请

US20120049213A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120049213A1
公开(公告)日：2012-03-01
申请号：US13148544
申请日：2009-10-13
申请人： Chao-Hsing Chen , Schang-Jing Hon , Alexander Chang Wang , Li-Tian Liang , Chin-Yung Fan , Chien-Kai Chung , Min-Hsun Hsieh
发明人： Chao-Hsing Chen , Schang-Jing Hon , Alexander Chang Wang , Li-Tian Liang , Chin-Yung Fan , Chien-Kai Chung , Min-Hsun Hsieh
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L25/0753 , H01L27/153 , H01L27/156 , H01L27/3211 , H01L33/50 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/12032 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is provided that is capable of being directly connected to an alternative current source, including at least one electronic element; at least one light-emitting diode array chip; at least one bonding pad, a conductive trace, and a submount for supporting the electronic element, the light-emitting diode array chip, the bonding pad, and the conductive trace. The conductive trace is electrically connected to the electronic element, the light-emitting diode array chip, and bonding pad.
摘要翻译：提供了能够直接连接到包括至少一个电子元件的替代电流源的发光器件; 至少一个发光二极管阵列芯片; 至少一个接合焊盘，导电迹线和用于支撑电子元件的基座，发光二极管阵列芯片，接合焊盘和导电迹线。导电迹线电连接到电子元件，发光二极管阵列芯片和接合焊盘。

3. 发明授权

US09196605B2 Light-emitting structure 有权
标题翻译：发光结构
公开(公告)号：US09196605B2
公开(公告)日：2015-11-24
申请号：US13230988
申请日：2011-09-13
申请人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L33/08 , H01L25/075 , H01L27/15 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the present application discloses a light-emitting structure, comprising a substrate, a first unit and a second unit separately form on the substrate; a trench formed between the first unit and the second unit, and having a bottom portion exposing the substrate, a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection connecting the first unit and the second unit and covering the first unit, the second unit and the less steep sidewall; wherein the sidewalls directly connect to the bottom portion, and the steeper sidewall is devoid of the electrical connection covering.
摘要翻译：本申请的一个实施例公开了一种发光结构，其包括基板，第一单元和在基板上分开形成的第二单元; 形成在所述第一单元和所述第二单元之间的沟槽，并且具有暴露所述基板的底部部分，比所述较不陡峭的侧壁更陡峭的侧壁和更陡峭的侧壁; 以及连接第一单元和第二单元并覆盖第一单元，第二单元和较不陡峭侧壁的电连接; 其中所述侧壁直接连接到所述底部部分，并且所述较陡侧壁没有电连接覆盖物。

4. 发明申请

US20120061694A1 LIGHT-EMITTING STRUCTURE 有权
标题翻译：发光结构
公开(公告)号：US20120061694A1
公开(公告)日：2012-03-15
申请号：US13230988
申请日：2011-09-13
申请人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall.
摘要翻译：本申请的实施例公开了一种发光结构，包括第一单元; 第二单位形成在所述第一单元和所述第二单元之间的沟槽，并且具有比所述较不陡峭的侧壁更陡峭的侧壁和更陡峭的侧壁; 以及布置在不太陡峭的侧壁上的电连接。

5. 发明授权

US09455242B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US09455242B2
公开(公告)日：2016-09-27
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/042 , H01L33/00 , H01L25/075 , H01L31/18 , H01L23/00 , H01L33/44 , H01L33/62
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

6. 发明申请

US20120055532A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE 有权
标题翻译：半导体光电器件
公开(公告)号：US20120055532A1
公开(公告)日：2012-03-08
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/0224 , H01L33/08 , H01L33/42
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

7. 发明授权

US09232586B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09232586B2
公开(公告)日：2016-01-05
申请号：US13336735
申请日：2011-12-23
申请人： Schang-Jing Hon , Chao-Hsing Chen , Hsin-Mao Liu
发明人： Schang-Jing Hon , Chao-Hsing Chen , Hsin-Mao Liu
IPC分类号： H05B37/02 , H05B33/08
CPC分类号： H05B33/0824 , H01L2924/0002 , H05B33/0815 , Y02B20/346 , H01L2924/00
摘要： A light-emitting device is capable of receiving a first voltage signal, a second voltage signal, and a third voltage signal in sequence. The light-emitting device includes a first light-emitting unit, a second light-emitting unit, and a switching. The first voltage signal, the second voltage signal, and the third voltage signal is configured to introduce a first current signal, a second current signal, and a third current signal, respectively. The light-emitting device is configured to emit a first light when introducing the first current signal, the second current signal, and the third current signal. The light-emitting device is configured to emit a second light when introducing the second current signal and the third current signal. The light-emitting device is configured to emit a third light when introducing the second current signal.
摘要翻译：发光装置能够依次接收第一电压信号，第二电压信号和第三电压信号。发光装置包括第一发光单元，第二发光单元和开关。第一电压信号，第二电压信号和第三电压信号被配置为分别引入第一电流信号，第二电流信号和第三电流信号。发光装置被配置为在引入第一电流信号，第二电流信号和第三电流信号时发射第一光。发光装置被配置为在引入第二电流信号和第三电流信号时发射第二光。发光装置被配置为在引入第二电流信号时发射第三光。

8. 发明申请

US20130032848A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20130032848A1
公开(公告)日：2013-02-07
申请号：US13565993
申请日：2012-08-03
申请人： Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
发明人： Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
IPC分类号： H01L33/48
CPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.
摘要翻译：光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。

9. 发明授权

US08928026B2 Optoelectronic device and method for manufacturing the same 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08928026B2
公开(公告)日：2015-01-06
申请号：US13565993
申请日：2012-08-03
申请人： Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
发明人： Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40 , H01L33/20
CPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.
摘要翻译：光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。

10. 发明授权

US08710515B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08710515B2
公开(公告)日：2014-04-29
申请号：US12874666
申请日：2010-09-02
申请人： Chao-Hsing Chen , Schang-Jing Hon
发明人： Chao-Hsing Chen , Schang-Jing Hon
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.
摘要翻译：本公开公开了一种发光装置。发光装置包括：基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层。第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层，用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层，用于电连接到第一发光单元中的第三发光二极管。

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