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    • 7. 发明申请
    • Fabrication structure for light emitting diode component
    • 发光二极管组件的制造结构
    • US20080151562A1
    • 2008-06-26
    • US12073579
    • 2008-03-07
    • Hwa SuAlexander Chan Wang
    • Hwa SuAlexander Chan Wang
    • F21V21/00
    • H01L25/0753F21K9/00F21Y2105/10F21Y2115/10H01L33/60H01L33/64H01L2224/48091H01L2224/49107H01L2924/09701H01L2924/00014
    • The fabrication structure for light emitting diode component is disclosed. The fabrication structure of the present invention includes a substrate, a plurality of cavities, a plurality of selection units, a first and a second directional predetermined cut. The plurality of cavities are arranged and disposed on the substrate to form an M rows×N columns matrix array. M and N are respectively a positive integer. Each selection unit corresponds to each cavity. The first directional predetermined cut is disposed between the rows, and the second directional predetermined cut is disposed between the columns. The first directional predetermined cut and the second directional predetermined cut are utilized to divide the substrate according to the plurality of selection units to obtain a X rows×Y columns area from the M rows×N columns matrix array. The fabrication structure of the present invention has high density and can be flexibly expanded upon demands
    • 公开了发光二极管部件的制造结构。 本发明的制造结构包括基板,多个空腔,多个选择单元,第一和第二定向预定切口。 多个空腔被布置和设置在基板上以形成M行×N列矩阵阵列。 M和N分别为正整数。 每个选择单元对应于每个空腔。 第一定向预定切口设置在行之间,并且第二定向预定切口设置在列之间。 使用第一定向预定切割和第二定向预定切割来根据多个选择单元划分基板,以从M行x列列矩阵阵列获得X行xY列区域。 本发明的制造结构具有高密度,并且可以根据需要灵活扩展