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1. 发明授权

US07713798B2 Thin film transistor substrate having nickel-silicide layer 失效
标题翻译：具有硅化镍层的薄膜晶体管基板
公开(公告)号：US07713798B2
公开(公告)日：2010-05-11
申请号：US12338671
申请日：2008-12-18
申请人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
发明人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
IPC分类号： H01L21/00
CPC分类号： H01L29/78669 , G02F1/136286 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/456 , H01L29/4908
摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.
摘要翻译：公开了一种LCD装置的薄膜晶体管基板及其制造方法。薄膜晶体管基板包括形成在包括硅和在硅化镍层上形成的金属层的绝缘层图案上的硅化镍层。将镍涂覆在包括硅的绝缘层图案上，并将金属材料涂覆在镀镍层上。之后，在约200〜约350℃进行热处理，得到硅化镍层。由于通过施加硅化镍布线来制造LCD器件的薄膜晶体管衬底，因此可以获得具有低电阻率和良好的欧姆接触特性的器件。

2. 发明申请

US20090212298A1 Thin Film Transistor Substrate Having Nickel-Silicide Layer 失效
标题翻译：具有镍 - 硅化物层的薄膜晶体管基板
公开(公告)号：US20090212298A1
公开(公告)日：2009-08-27
申请号：US12338671
申请日：2008-12-18
申请人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
发明人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
IPC分类号： H01L29/786 , H01L33/00 , H01L21/336
CPC分类号： H01L29/78669 , G02F1/136286 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/456 , H01L29/4908
摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.
摘要翻译：公开了一种LCD装置的薄膜晶体管基板及其制造方法。薄膜晶体管基板包括形成在包括硅和在硅化镍层上形成的金属层的绝缘层图案上的硅化镍层。将镍涂覆在包括硅的绝缘层图案上，并将金属材料涂覆在镀镍层上。之后，在约200〜约350℃进行热处理，得到硅化镍层。由于通过施加硅化镍布线来制造LCD器件的薄膜晶体管衬底，因此可以获得具有低电阻率和良好的欧姆接触特性的器件。

3. 发明授权

US07172913B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07172913B2
公开(公告)日：2007-02-06
申请号：US11082967
申请日：2005-03-18
申请人： Woo-Geun Lee , Beom-Seok Cho , Je-Hun Lee , Chang-Oh Jeong , Sang-Gab Kim , Min-Seok Oh , Young-Wook Lee , Hee-Hwan Choe
发明人： Woo-Geun Lee , Beom-Seok Cho , Je-Hun Lee , Chang-Oh Jeong , Sang-Gab Kim , Min-Seok Oh , Young-Wook Lee , Hee-Hwan Choe
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F2001/136236 , H01L21/31144 , H01L21/32139 , H01L27/1214 , H01L27/124 , H01L29/41733
摘要： A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.
摘要翻译：一种制造薄膜晶体管阵列面板的方法，包括在衬底上形成栅极线，在栅极线上形成栅极绝缘层，在栅极绝缘层上形成半导体层，在半导体上形成数据线和漏电极在所述数据线和所述漏电极上沉积钝化层，在所述钝化层上形成包含比所述第一部分薄的第一部分和第二部分的光致抗蚀剂，使用所述光致抗蚀剂作为掩模蚀刻所述钝化层露出漏极的一部分，去除光致抗蚀剂的第二部分，沉积导电膜，以及去除光致抗蚀剂的第一部分，以在漏电极的暴露部分上形成像素电极。

4. 发明申请

US20060145255A1 Thin film transistor substrate 失效
公开(公告)号：US20060145255A1
公开(公告)日：2006-07-06
申请号：US10548562
申请日：2004-02-28
申请人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
发明人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
IPC分类号： H01L21/84
CPC分类号： H01L29/78669 , G02F1/136286 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/456 , H01L29/4908
摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.

5. 发明授权

US07485927B2 Thin film transistor substrate 失效
标题翻译：薄膜晶体管基板
公开(公告)号：US07485927B2
公开(公告)日：2009-02-03
申请号：US10548562
申请日：2004-02-28
申请人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
发明人： Chang-Oh Jeong , Beom-Seok Cho , Hee-Hwan Choe
IPC分类号： H01L21/84
CPC分类号： H01L29/78669 , G02F1/136286 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/456 , H01L29/4908
摘要： Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.
摘要翻译：公开了一种LCD装置的薄膜晶体管基板及其制造方法。薄膜晶体管基板包括形成在包括硅和在硅化镍层上形成的金属层的绝缘层图案上的硅化镍层。将镍涂覆在包括硅的绝缘层图案上，并将金属材料涂覆在镀镍层上。之后，在约200〜约350℃进行热处理，得到硅化镍层。由于通过施加硅化镍布线来制造LCD器件的薄膜晶体管衬底，因此可以获得具有低电阻率和良好的欧姆接触特性的器件。

6. 发明申请

US20070102770A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20070102770A1
公开(公告)日：2007-05-10
申请号：US11619451
申请日：2007-01-03
申请人： Woo-Geun Lee , Beom-Seok Cho , Je-Hun Lee , Chang-Oh Jeong , Sang-Gab Kim , Min-Seok Oh , Young-Wook Lee , Hee-Hwan Choe
发明人： Woo-Geun Lee , Beom-Seok Cho , Je-Hun Lee , Chang-Oh Jeong , Sang-Gab Kim , Min-Seok Oh , Young-Wook Lee , Hee-Hwan Choe
IPC分类号： H01L29/76
CPC分类号： H01L27/1288 , G02F2001/136236 , H01L21/31144 , H01L21/32139 , H01L27/1214 , H01L27/124 , H01L29/41733
摘要： A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.
摘要翻译：一种制造薄膜晶体管阵列面板的方法，包括在衬底上形成栅极线，在栅极线上形成栅极绝缘层，在栅极绝缘层上形成半导体层，在半导体上形成数据线和漏电极在所述数据线和所述漏电极上沉积钝化层，在所述钝化层上形成包含比所述第一部分薄的第一部分和第二部分的光致抗蚀剂，使用所述光致抗蚀剂作为掩模蚀刻所述钝化层露出漏极的一部分，去除光致抗蚀剂的第二部分，沉积导电膜，以及去除光致抗蚀剂的第一部分，以在漏电极的暴露部分上形成像素电极。

7. 发明申请

US20050221546A1 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20050221546A1
公开(公告)日：2005-10-06
申请号：US11082967
申请日：2005-03-18
申请人： Woo-Geun Lee , Beom-Seok Cho , Je-Hun Lee , Chang-Oh Jeong , Sang-Gab Kim , Min-Seok Oh , Young-Wook Lee , Hee-Hwan Choe
发明人： Woo-Geun Lee , Beom-Seok Cho , Je-Hun Lee , Chang-Oh Jeong , Sang-Gab Kim , Min-Seok Oh , Young-Wook Lee , Hee-Hwan Choe
IPC分类号： G02F1/1368 , G09F9/30 , G09G3/36 , G09G3/38 , H01L21/00 , H01L21/311 , H01L21/3213 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L27/1288 , G02F2001/136236 , H01L21/31144 , H01L21/32139 , H01L27/1214 , H01L27/124 , H01L29/41733
摘要： A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.
摘要翻译：一种制造薄膜晶体管阵列面板的方法，包括在衬底上形成栅极线，在栅极线上形成栅极绝缘层，在栅极绝缘层上形成半导体层，在半导体上形成数据线和漏电极在所述数据线和所述漏电极上沉积钝化层，在所述钝化层上形成包含比所述第一部分薄的第一部分和第二部分的光致抗蚀剂，使用所述光致抗蚀剂作为掩模蚀刻所述钝化层露出漏极的一部分，去除光致抗蚀剂的第二部分，沉积导电膜，以及去除光致抗蚀剂的第一部分，以在漏电极的暴露部分上形成像素电极。

8. 发明申请

US20110024759A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FORMING METAL WIRE THEREOF 审中-公开
标题翻译：薄膜晶体管基板及形成金属线的方法
公开(公告)号：US20110024759A1
公开(公告)日：2011-02-03
申请号：US12901324
申请日：2010-10-08
申请人： Jae-Gab LEE , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
发明人： Jae-Gab LEE , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
IPC分类号： H01L29/786 , H01L21/768
CPC分类号： H01L29/78603 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908 , H01L2224/32245
摘要： The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
摘要翻译：薄膜晶体管基板及其金属布线方法技术领域本发明涉及薄膜晶体管基板及其金属布线方法，更具体地涉及在基板和金属布线之间包括自组装单层的薄膜晶体管基板及其金属布线。由于本发明的薄膜晶体管基板在Si表面和金属布线之间包含三维交联的自组装单层，因此具有良好的粘附能力和抗扩散能力。

9. 发明授权

US07304383B2 TFT substrate for liquid crystal display apparatus and method of manufacturing the same 失效
标题翻译：液晶显示装置用TFT基板及其制造方法
公开(公告)号：US07304383B2
公开(公告)日：2007-12-04
申请号：US10535304
申请日：2003-10-27
申请人： Beom-Seok Cho , Chang-Oh Jeong
发明人： Beom-Seok Cho , Chang-Oh Jeong
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/4908 , C22C9/00 , G02F1/133345 , G02F1/136286 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer (11). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer (11) to a thickness from about 50 Å to about 5,000 Å. The deposited compound is then heat treated to convert the deposited compound into a silicide compound (11b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer.
摘要翻译：提供了一种用于LCD装置的TFT基板及其制造方法。连续地在TFT基板上形成基板（10），扩散阻挡层（11）和铜合金层（12）。铜合金包括约0.5at％至约15at％的材料以形成栅极布线层。该材料用于形成扩散阻挡层（11）。包含诸如Zr，Ti，Hf，V，Ta，Ni，Cr，Nb，Co，Mn，Mo，W，Rh，Pd，Pt等材料的化合物沉积在扩散阻挡层（11）上，至约50至约5000的厚度。然后将沉积的化合物进行热处理以将沉积的化合物转化为硅化物（11b）。晶体管衬底具有低电阻和高电导率。此外，简化了蚀刻工艺，并且通过薄的扩散阻挡层来防止相互扩散。

10. 发明申请

US20070082434A1 Manufacturing of thin film transistor array panel 审中-公开
标题翻译：制造薄膜晶体管阵列面板
公开(公告)号：US20070082434A1
公开(公告)日：2007-04-12
申请号：US11540131
申请日：2006-09-29
申请人： Yang-Ho Bae , Chang-Oh Jeong , Je-Hun Lee , Beom-Seok Cho
发明人： Yang-Ho Bae , Chang-Oh Jeong , Je-Hun Lee , Beom-Seok Cho
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： The present invention relates to a manufacturing method of a thin film transistor array panel. the method includes forming a gate line including a gate electrode on a substrate, forming a first insulating layer on the gate line, forming a semiconductor layer on the first insulating layer, forming an ohmic contact on the semiconductor layer, forming a data line including a source electrode and a drain electrode on the ohmic contact, depositing a second insulating layer, forming a first photoresist on the second insulating layer, etching the second insulating layer and the first insulating layer using the first photoresist as an etching mask to expose a portion of the drain electrode and a portion of the substrate, forming a pixel electrode connected to an exposed portion of the drain electrode using selective deposition, and removing the first photoresist.
摘要翻译：本发明涉及薄膜晶体管阵列面板的制造方法。该方法包括在基板上形成包括栅电极的栅极线，在栅极线上形成第一绝缘层，在第一绝缘层上形成半导体层，在半导体层上形成欧姆接触，形成数据线，源电极和漏电极，沉积第二绝缘层，在第二绝缘层上形成第一光致抗蚀剂，使用第一光致抗蚀剂蚀刻第二绝缘层和第一绝缘层作为蚀刻掩模，以暴露部分所述漏电极和所述衬底的一部分，使用选择性沉积形成连接到所述漏极的暴露部分的像素电极，以及去除所述第一光致抗蚀剂。

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