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1. 发明申请

US20140326305A1 SOLAR CELL AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20140326305A1
公开(公告)日：2014-11-06
申请号：US14239693
申请日：2012-08-17
申请人： Chang Ki Baek , Yoon Ha Jeong , Seong Wook Choi , Tai Uk Rim , Soo Young Park , Myung Dong Ko
发明人： Chang Ki Baek , Yoon Ha Jeong , Seong Wook Choi , Tai Uk Rim , Soo Young Park , Myung Dong Ko
IPC分类号： H01L31/0352 , H01L31/0224 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/035227 , H01L31/022466 , H01L31/02327 , H01L31/035281 , H01L31/0547 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547
摘要： Disclosed are a solar cell and a method for manufacturing the same. The solar cell comprises asymmetric nanowires each of which has an angled sidewall, and thus incident light can be concentrated at a p-n junction portion by means of a total reflection phenomenon of light caused by the difference between the refractive indices of a semiconductor layer and a transparent electrode layer, and light absorption may increase due to an increase in the light travel distance, thus improving photoelectric efficiency. Further, the method for manufacturing the solar cell involves etching a substrate and integrally forming the substrate and a p-type semiconductor layer including the asymmetric nanowires each of which has the angled sidewalls, thereby enabling reduced manufacturing costs and simple and easy manufacture of the nanowires having the angled sidewalls.
摘要翻译：公开了一种太阳能电池及其制造方法。太阳能电池包括不对称的纳米线，每个纳米线具有成角度的侧壁，因此入射光可以通过由半导体层的折射率和透明的折射率之间的差引起的光的全反射现象集中在pn结部分电极层，由于光行进距离的增加，光吸收可能增加，从而提高光电效率。此外，太阳能电池的制造方法包括蚀刻基板并且一体地形成基板以及包括不对称的纳米线的p型半导体层，每个具有成角度的侧壁，从而能够降低制造成本，并且简单且容易地制造纳米线具有成角度的侧壁。

2. 发明授权

US09559230B2 Solar cell and method for manufacturing same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US09559230B2
公开(公告)日：2017-01-31
申请号：US14239693
申请日：2012-08-17
申请人： Chang Ki Baek , Yoon Ha Jeong , Seong Wook Choi , Tai Uk Rim , Soo Young Park , Myung Dong Ko
发明人： Chang Ki Baek , Yoon Ha Jeong , Seong Wook Choi , Tai Uk Rim , Soo Young Park , Myung Dong Ko
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/068 , H01L31/0224 , H01L31/0232 , H01L31/054
CPC分类号： H01L31/035227 , H01L31/022466 , H01L31/02327 , H01L31/035281 , H01L31/0547 , H01L31/068 , H01L31/18 , Y02E10/52 , Y02E10/547
摘要： Disclosed are a solar cell and a method for manufacturing the same. The solar cell comprises asymmetric nanowires each of which has an angled sidewall, and thus incident light can be concentrated at a p-n junction portion by means of a total reflection phenomenon of light caused by the difference between the refractive indices of a semiconductor layer and a transparent electrode layer, and light absorption may increase due to an increase in the light travel distance, thus improving photoelectric efficiency. Further, the method for manufacturing the solar cell involves etching a substrate and integrally forming the substrate and a p-type semiconductor layer including the asymmetric nanowires each of which has the angled sidewalls, thereby enabling reduced manufacturing costs and simple and easy manufacture of the nanowires having the angled sidewalls.
摘要翻译：公开了一种太阳能电池及其制造方法。太阳能电池包括不对称的纳米线，每个纳米线具有成角度的侧壁，因此入射光可以通过由半导体层的折射率和透明的折射率之间的差引起的光的全反射现象集中在pn结部分电极层，由于光行进距离的增加，光吸收可能增加，从而提高光电效率。此外，太阳能电池的制造方法包括蚀刻基板并且一体地形成基板以及包括不对称的纳米线的p型半导体层，每个具有成角度的侧壁，从而能够降低制造成本，并且简单且容易地制造纳米线具有成角度的侧壁。

3. 发明申请

US20140034907A1 NANOWIRE SENSOR HAVING NANOWIRE OF NETWORK STRUCTURE 有权
标题翻译：具有网络结构纳米的纳米传感器
公开(公告)号：US20140034907A1
公开(公告)日：2014-02-06
申请号：US14111727
申请日：2012-03-19
申请人： Jeong Soo Lee , Yoon Ha Jeong , Tai Uk Rim , Chang Ki Baek , Sung Ho Kim , Ki Hyun Kim
发明人： Jeong Soo Lee , Yoon Ha Jeong , Tai Uk Rim , Chang Ki Baek , Sung Ho Kim , Ki Hyun Kim
IPC分类号： H01L29/775 , H01L29/66
CPC分类号： H01L29/775 , B82Y40/00 , G01N27/06 , G01N27/3278 , G01N33/48707 , H01L29/66477
摘要： A nanowire sensor having a nanowire in a network structure includes: source and drain electrodes formed over a substrate; a nanowire formed between the source and drain electrodes and having a network structure in which patterns of intersections are repeated; and a detection material fixed to the nanowire and selectively reacting with a target material introduced from outside.
摘要翻译：具有网络结构中的纳米线的纳米线传感器包括：形成在衬底上的源极和漏极; 在源极和漏极之间形成的纳米线，并且具有重复相交图案的网络结构; 以及固定在纳米线上并与从外部导入的靶材料选择性反应的检测材料。

4. 发明授权

US09099543B2 Nanowire sensor having nanowire of network structure 有权
标题翻译：纳米线传感器具有网络结构的纳米线
公开(公告)号：US09099543B2
公开(公告)日：2015-08-04
申请号：US14111727
申请日：2012-03-19
申请人： Jeong Soo Lee , Yoon Ha Jeong , Tai Uk Rim , Chang Ki Baek , Sung Ho Kim , Ki Hyun Kim
发明人： Jeong Soo Lee , Yoon Ha Jeong , Tai Uk Rim , Chang Ki Baek , Sung Ho Kim , Ki Hyun Kim
IPC分类号： H01L27/14 , H01L21/00 , H01L29/775 , G01N27/06 , G01N27/327 , G01N33/487 , H01L29/66 , B82Y40/00
CPC分类号： H01L29/775 , B82Y40/00 , G01N27/06 , G01N27/3278 , G01N33/48707 , H01L29/66477
摘要： A nanowire sensor having a nanowire in a network structure includes: source and drain electrodes formed over a substrate; a nanowire formed between the source and drain electrodes and having a network structure in which patterns of intersections are repeated; and a detection material fixed to the nanowire and selectively reacting with a target material introduced from outside.
摘要翻译：具有网络结构中的纳米线的纳米线传感器包括：形成在衬底上的源极和漏极; 在源极和漏极之间形成的纳米线，并且具有重复相交图案的网络结构; 以及固定在纳米线上并与从外部导入的靶材料选择性反应的检测材料。

5. 发明授权

US08466746B2 Three-stage GaN HEMT doherty power amplifier for high frequency applications 失效
标题翻译：三级GaN HEMT大功率放大器用于高频应用
公开(公告)号：US08466746B2
公开(公告)日：2013-06-18
申请号：US13345163
申请日：2012-01-06
申请人： Yoon Ha Jeong , Mun Woo Lee , Sang Ho Kam
发明人： Yoon Ha Jeong , Mun Woo Lee , Sang Ho Kam
IPC分类号： H03F3/68
CPC分类号： H03F1/0288 , H03F1/0266 , H03F2200/18
摘要： A three-stage GaN HEMT Doherty power amplifier for high frequency applications includes: a carrier amplifier; first and second peaking amplifier; a 10-dB power divider configured to divide an input signal to the carrier amplifier and the first and second peaking amplifiers; a first path for controlling input power of the carrier amplifier; and a second path for maintaining an efficiency of 40% or more in an output range of 40 dBm to 50 dBm.
摘要翻译：用于高频应用的三级GaN HEMT Doherty功率放大器包括：载波放大器; 第一和第二峰值放大器; 10dB功率分配器，被配置为将输入信号划分到载波放大器和第一和第二峰值放大器; 用于控制载波放大器的输入功率的第一路径; 以及在40dBm至50dBm的输出范围内保持40％或更高的效率的第二路径。

6. 发明授权

US08400216B2 3-way Doherty power amplifier using driving amplifier 失效
标题翻译： 3路Doherty功率放大器使用驱动放大器
公开(公告)号：US08400216B2
公开(公告)日：2013-03-19
申请号：US13286818
申请日：2011-11-01
申请人： Yoon Ha Jeong , Sang Ho Kam , Yong Sub Lee , Mun Woo Lee
发明人： Yoon Ha Jeong , Sang Ho Kam , Yong Sub Lee , Mun Woo Lee
IPC分类号： H03F3/68
CPC分类号： H03F1/0288
摘要： Disclosed is a 3-way Doherty power amplifier using a driving amplifier in which driving amplifiers are connected to the front stages of a carrier amplifier and a peaking amplifier, respectively, so as to obtain a high gain and a high efficiency. To this end, the Doherty power amplifier includes: a hybrid power distributor for distributing an input signal into first and second path units; and a driving amplifier for receiving a signal outputted from the hybrid power distributor and controlling the driving of a carrier amplifier, a first peaking amplifier, and a second peaking amplifier, wherein: the carrier amplifier, the first peaking amplifier, and the second peaking amplifier are connected to a rear stage of the driving amplifier, respectively; the first path unit generates a high efficiency at a low input power; and the second path unit maintains a high efficiency and gain in a high output range.
摘要翻译：公开了一种使用驱动放大器的3路Doherty功率放大器，其中驱动放大器分别连接到载波放大器和峰值放大器的前级，以获得高增益和高效率。为此，Doherty功率放大器包括：混合功率分配器，用于将输入信号分配到第一和第二路径单元中; 以及驱动放大器，用于接收从混合功率分配器输出的信号并控制载波放大器，第一峰值放大器和第二峰值放大器的驱动，其中：载波放大器，第一峰值放大器和第二峰值放大器分别连接到驱动放大器的后级; 第一路径单元在低输入功率下产生高效率; 并且第二路径单元在高输出范围内保持高效率和增益。

7. 发明授权

US08305141B2 Distributed Doherty power amplifier 有权
标题翻译：分布式Doherty功率放大器
公开(公告)号：US08305141B2
公开(公告)日：2012-11-06
申请号：US12964206
申请日：2010-12-09
申请人： Yoon Ha Jeong , Mun-Woo Lee , Yong-Sub Lee
发明人： Yoon Ha Jeong , Mun-Woo Lee , Yong-Sub Lee
IPC分类号： H03F3/68
CPC分类号： H03F3/602 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/222 , H03F2200/387 , H03F2200/423 , H03F2200/543 , H03F2203/21106 , H03F2203/21142
摘要： Provided is a distributed Doherty power amplifier exhibiting high efficiency and linearity at a wide range of bandwidths, the distributed Doherty power amplifier including a first amplifier; a second amplifier, which is connected to the first amplifier in parallel; a first shifting unit, which is interconnected between the input of the first amplifier and the input of the second amplifier and inverses the phase of the input of the second amplifier; and a second shifting unit, which is interconnected between the output of the first amplifier and the output of the second amplifier and inverses the phase of the output of the second amplifier, wherein the first amplifier and the second amplifier are Doherty power amplifiers, and each of the Doherty power amplifiers includes a carrier amplifier and a peaking amplifier, which are connected in parallel.
摘要翻译：提供了一种分布式Doherty功率放大器，在宽范围的带宽下表现出高效率和线性度，分布式Doherty功率放大器包括第一放大器; 第二放大器，并联连接到第一放大器; 第一移位单元，其互连在第一放大器的输入端和第二放大器的输入端之间，并反转第二放大器输入端的相位; 以及第二移位单元，其互连在第一放大器的输出端和第二放大器的输出端之间，并且反转第二放大器的输出的相位，其中第一放大器和第二放大器是多赫蒂功率放大器，的多赫蒂功率放大器包括并联的载波放大器和峰值放大器。

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