专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07656484B2 Method and apparatus for forming alignment layer for liquid crystal display 有权
标题翻译：用于形成液晶显示器取向层的方法和装置
公开(公告)号：US07656484B2
公开(公告)日：2010-02-02
申请号：US11289413
申请日：2005-11-30
申请人： Chang Dong Kim , Hyun Sik Seo , Kwang Hoon Shin , Dae Hyun Nam
发明人： Chang Dong Kim , Hyun Sik Seo , Kwang Hoon Shin , Dae Hyun Nam
IPC分类号： G02F1/1337
CPC分类号： G02F1/13378 , G02F1/133711 , G02F2001/133765 , G02F2202/07
摘要： A method for forming an alignment layer for a liquid crystal display includes preparing a substrate, applying an alignment material for initial alignment of a liquid crystal, and applying a field flux (e.g., an electric or magnetic field) to the alignment material to determine the alignment direction of the alignment material. Further disclosed is an apparatus for forming an alignment layer for a liquid crystal display. The apparatus comprises a substrate stage on which a substrate is mounted, and an electric or magnetic field generator installed at the periphery of the substrate stage. According to the method and the apparatus, since the alignment direction of an alignment material is determined by using an electric or magnetic field, no physical contact with a substrate is required and thus the problem of light leakage caused by rubbing alignment is solved.
摘要翻译：用于形成液晶显示器取向层的方法包括：准备衬底，施加用于液晶初始取向的取向材料，以及向对准材料施加磁场通量（例如电场或磁场）以确定对准材料的排列方向。还公开了一种用于形成液晶显示器取向层的装置。该装置包括安装有基板的基板台和安装在基板台周边的电场或磁场发生器。根据该方法和装置，由于通过使用电场或磁场来确定取向材料的取向方向，所以不需要与基板的物理接触，因此解决了由摩擦取向引起的漏光的问题。

2. 发明申请

US20100093249A1 Apparatus for fabricating liquid crystal display panels 有权
标题翻译：液晶显示面板制造装置
公开(公告)号：US20100093249A1
公开(公告)日：2010-04-15
申请号：US12654197
申请日：2009-12-14
申请人： Chang Dong Kim , Hyun Sik Seo , Kwang Hoon Shin , Dae Hyun Nam
发明人： Chang Dong Kim , Hyun Sik Seo , Kwang Hoon Shin , Dae Hyun Nam
IPC分类号： H01J9/00
CPC分类号： G02F1/13378 , G02F1/133711 , G02F2001/133765 , G02F2202/07
摘要： A method for forming an alignment layer for a liquid crystal display includes preparing a substrate, applying an alignment material for initial alignment of a liquid crystal, and applying a field flux (e.g., an electric or magnetic field) to the alignment material to determine the alignment direction of the alignment material. Further disclosed is an apparatus for forming an alignment layer for a liquid crystal display. The apparatus comprises a substrate stage on which a substrate is mounted, and an electric or magnetic field generator installed at the periphery of the substrate stage. According to the method and the apparatus, since the alignment direction of an alignment material is determined by using an electric or magnetic field, no physical contact with a substrate is required and thus the problem of light leakage caused by rubbing alignment is solved.
摘要翻译：用于形成液晶显示器取向层的方法包括：准备衬底，施加用于液晶初始取向的取向材料，以及向对准材料施加磁场通量（例如电场或磁场）以确定对准材料的排列方向。还公开了一种用于形成液晶显示器取向层的装置。该装置包括安装有基板的基板台和安装在基板台周边的电场或磁场发生器。根据该方法和装置，由于通过使用电场或磁场来确定取向材料的取向方向，所以不需要与基板的物理接触，因此解决了由摩擦取向引起的漏光的问题。

3. 发明授权

US08184248B2 Apparatus for fabricating liquid crystal display panels 有权
标题翻译：液晶显示面板制造装置
公开(公告)号：US08184248B2
公开(公告)日：2012-05-22
申请号：US12654197
申请日：2009-12-14
申请人： Chang Dong Kim , Hyun Sik Seo , Kwang Hoon Shin , Dae Hyun Nam
发明人： Chang Dong Kim , Hyun Sik Seo , Kwang Hoon Shin , Dae Hyun Nam
IPC分类号： G02F1/1337
CPC分类号： G02F1/13378 , G02F1/133711 , G02F2001/133765 , G02F2202/07
摘要： A method for forming an alignment layer for a liquid crystal display includes preparing a substrate, applying an alignment material for initial alignment of a liquid crystal, and applying a field flux (e.g., an electric or magnetic field) to the alignment material to determine the alignment direction of the alignment material. Further disclosed is an apparatus for forming an alignment layer for a liquid crystal display. The apparatus comprises a substrate stage on which a substrate is mounted, and an electric or magnetic field generator installed at the periphery of the substrate stage. According to the method and the apparatus, since the alignment direction of an alignment material is determined by using an electric or magnetic field, no physical contact with a substrate is required and thus the problem of light leakage caused by rubbing alignment is solved.
摘要翻译：用于形成液晶显示器取向层的方法包括：准备衬底，施加用于液晶初始取向的取向材料，以及向对准材料施加磁场通量（例如电场或磁场）以确定对准材料的排列方向。还公开了一种用于形成液晶显示器取向层的装置。该装置包括安装有基板的基板台和安装在基板台周边的电场或磁场发生器。根据该方法和装置，由于通过使用电场或磁场来确定取向材料的取向方向，所以不需要与基板的物理接触，因此解决了由摩擦取向引起的漏光的问题。

4. 发明授权

US07439103B2 Organic thin film transistor, method for fabricating the same, and liquid crystal display device with the same 有权
标题翻译：有机薄膜晶体管及其制造方法以及具有该薄膜晶体管的液晶显示装置
公开(公告)号：US07439103B2
公开(公告)日：2008-10-21
申请号：US11207308
申请日：2005-08-19
申请人： Hyun Sik Seo , Dae Hyun Nam , Nack Bong Choi
发明人： Hyun Sik Seo , Dae Hyun Nam , Nack Bong Choi
IPC分类号： H01L21/335 , H01L21/8232
CPC分类号： H01L51/0545 , H01L51/0018
摘要： An organic thin film transistor and a method for fabricating the same are disclosed. The method for fabricating the organic thin film transistor includes forming a gate electrode on a substrate. A gate insulating layer is formed on an entire surface of the substrate including the gate electrode, and source and drain electrodes are formed at a predetermined interval from each other on the gate insulating layer. An organic semiconductor layer is formed on the entire surface of the substrate and a first protection layer is formed on the organic semiconductor layer. The first protection layer is patterned and the organic semiconductor layer etched using the remaining first protection layer as a mask. A second protection layer is then formed on the entire surface of the substrate.
摘要翻译：公开了一种有机薄膜晶体管及其制造方法。有机薄膜晶体管的制造方法包括在基板上形成栅电极。在包括栅电极的基板的整个表面上形成栅极绝缘层，并且在栅极绝缘层上以预定的间隔形成源极和漏极。在基板的整个表面上形成有机半导体层，在有机半导体层上形成第一保护层。图案化第一保护层，并且使用剩余的第一保护层作为掩模蚀刻有机半导体层。然后在基板的整个表面上形成第二保护层。

5. 发明授权

US07361535B2 Liquid crystal display device having polycrystalline TFT and fabricating method thereof 有权
标题翻译：具有多晶TFT的液晶显示装置及其制造方法
公开(公告)号：US07361535B2
公开(公告)日：2008-04-22
申请号：US11194474
申请日：2005-08-02
申请人： Dae Hyun Nam
发明人： Dae Hyun Nam
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78696
摘要： A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.
摘要翻译：薄膜晶体管包括基板，在具有沟道区域的基板上形成的结晶半导体层，低密度杂质区域和高密度杂质区域，形成在结晶化半导体层上的栅极绝缘层，形成在第一栅电极所述栅绝缘层具有对应于所述沟道区的宽度，第二栅电极，形成在所述第一栅极上和所述栅绝缘层上，使得所述第二栅电极与所述低密度杂质区重叠，以及源电极和漏电极分别接触高浓度杂质区域。

6. 发明授权

US06963083B2 Liquid crystal display device having polycrystalline TFT and fabricating method thereof 有权
标题翻译：具有多晶TFT的液晶显示装置及其制造方法
公开(公告)号：US06963083B2
公开(公告)日：2005-11-08
申请号：US10663765
申请日：2003-09-17
申请人： Dae Hyun Nam
发明人： Dae Hyun Nam
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/786 , H01L29/04 , H01L31/20 , H01L31/36 , H01L31/376 , H01L29/76 , H01L31/62 , H01L31/113
CPC分类号： H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78696
摘要： A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer, a first gate electrode formed on the gate insulating layer having a width corresponding to the channel region, a second gate electrode formed on the first gate electrode and on the gate insulating layer such that the second gate electrode overlaps the low-density impurity regions and a source electrode and a drain electrode respectively contacting the high-density impurity regions.
摘要翻译：薄膜晶体管包括基板，在具有沟道区域的基板上形成的结晶半导体层，低密度杂质区域和高密度杂质区域，形成在结晶化半导体层上的栅极绝缘层，形成在第一栅电极所述栅绝缘层具有对应于所述沟道区的宽度，第二栅电极，形成在所述第一栅极上和所述栅绝缘层上，使得所述第二栅电极与所述低密度杂质区重叠，以及源电极和漏电极分别接触高浓度杂质区域。

7. 发明授权

US06607949B2 Method for fabricating polysilicon thin film transistor with improved electrical characteristics 有权
标题翻译：制造具有改善的电气特性的多晶硅薄膜晶体管的方法
公开(公告)号：US06607949B2
公开(公告)日：2003-08-19
申请号：US09998311
申请日：2001-12-03
申请人： Binn Kim , Hae Yeol Kim , Dae Hyun Nam
发明人： Binn Kim , Hae Yeol Kim , Dae Hyun Nam
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A method for fabricating a thin film transistor includes forming a buffer layer on a substrate, forming a first amorphous silicon layer on the buffer layer, forming a plurality of metal clusters on the first amorphous silicon layer, forming a second amorphous silicon layer on the metal clusters including the first amorphous silicon layer, and simultaneously applying a heat-treatment and an electrical field to crystallize the first and the second amorphous silicon layers.
摘要翻译：一种制造薄膜晶体管的方法，包括在衬底上形成缓冲层，在缓冲层上形成第一非晶硅层，在第一非晶硅层上形成多个金属簇，在金属上形成第二非晶硅层包括第一非晶硅层的簇，并且同时施加热处理和电场以使第一和第二非晶硅层结晶。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式