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1. 发明申请

US20070023867A1 Film taking-off method 有权
标题翻译：电影起飞方式
公开(公告)号：US20070023867A1
公开(公告)日：2007-02-01
申请号：US11221045
申请日：2005-09-06
申请人： Cecile Aulnette , Ian Cayrefourcq , Carlos Mazure
发明人： Cecile Aulnette , Ian Cayrefourcq , Carlos Mazure
IPC分类号： H01L29/06 , H01L21/46
CPC分类号： H01L21/76254
摘要： The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer. This method includes forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone. The implantation of atomic species into the step can be prevented by forming a protective layer at least over the step or by masking the step. The invention also relates to a wafer obtainable by the method.
摘要翻译：本发明涉及一种从初始晶片开始制造用于电子学，光学或光电子学中的薄膜的方法，其包括通过晶片的一个表面注入原子物质的步骤。该方法包括：形成围绕晶片周边的限定高度的台阶，其平均厚度小于晶片的平均厚度; 并且通过晶片的表面选择性地注入原子物质，但不通过该步骤，以在限定的注入深度处形成植入区域，其中膜被限定在晶片的表面和植入区域之间。可以通过至少在该步骤上形成保护层或通过掩蔽该步骤来防止将原子物质注入到该步骤中。本发明还涉及可通过该方法获得的晶片。

2. 发明申请

US20050070078A1 Indirect bonding with disappearance of bonding layer 失效
标题翻译：间接键合与粘结层消失
公开(公告)号：US20050070078A1
公开(公告)日：2005-03-31
申请号：US10753173
申请日：2004-01-06
申请人： Nicolas Daval , Bruno Ghyselen , Cecile Aulnette , Oliver Rayssac , Ian Cayrefourcq
发明人： Nicolas Daval , Bruno Ghyselen , Cecile Aulnette , Oliver Rayssac , Ian Cayrefourcq
IPC分类号： H01L21/20 , H01L21/762 , H01L21/22
CPC分类号： H01L21/76251 , H01L21/2007 , H01L21/76254 , Y10S438/933
摘要： The invention provides a method of producing a structure of a thin layer of semiconductor material on a support substrate. The thin layer is obtained from a donor substrate and includes an upper layer of semiconductor material. The method includes forming on the upper layer a bonding layer of a material that accepts diffusion from an element of the material of the upper layer, bonding the donor substrate from the side on which the bonding layer is formed on the upper layer to the support substrate, and diffusing the element from the upper layer into the bonding layer to homogenize the concentration of the element in the bonding layer and the upper layer. The result is that the thin layer of the structure is joined by the bonding layer to the upper layer.
摘要翻译：本发明提供一种在支撑基板上制造半导体材料薄层结构的方法。薄层从供体基底获得并且包括半导体材料的上层。该方法包括在上层上形成接受来自上层材料的元素的扩散的材料的接合层，将施主衬底从上层上形成接合层的一侧粘合到支撑衬底上并且将元件从上层扩散到接合层中以使结合层和上层中的元素的浓度均匀化。结果是结构的薄层通过粘合层连接到上层。

3. 发明授权

US07572714B2 Film taking-off method 有权
标题翻译：电影起飞方式
公开(公告)号：US07572714B2
公开(公告)日：2009-08-11
申请号：US11221045
申请日：2005-09-06
申请人： Cécile Aulnette , Ian Cayrefourcq , Carlos Mazure
发明人： Cécile Aulnette , Ian Cayrefourcq , Carlos Mazure
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer. This method includes forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone. The implantation of atomic species into the step can be prevented by forming a protective layer at least over the step or by masking the step. The invention also relates to a wafer obtainable by the method.
摘要翻译：本发明涉及一种从初始晶片开始制造用于电子学，光学或光电子学中的薄膜的方法，其包括通过晶片的一个表面注入原子物质的步骤。该方法包括：形成围绕晶片周边的限定高度的台阶，其平均厚度小于晶片的平均厚度; 并且通过晶片的表面选择性地注入原子物质，但不通过该步骤，以在限定的注入深度处形成植入区域，其中膜被限定在晶片的表面和植入区域之间。可以通过至少在该步骤上形成保护层或通过掩蔽该步骤来防止将原子物质注入到该步骤中。本发明还涉及可通过该方法获得的晶片。

4. 发明申请

US20060099779A1 Method for transferring a thin layer including a controlled disturbance of a crystalline structure 有权
标题翻译：用于转移包含晶体结构受控干扰的薄层的方法
公开(公告)号：US20060099779A1
公开(公告)日：2006-05-11
申请号：US11305444
申请日：2005-12-16
申请人： Ian Cayrefourcq , Carlos Mazure , Konstantin Bourdelle
发明人： Ian Cayrefourcq , Carlos Mazure , Konstantin Bourdelle
IPC分类号： H01L21/20 , H01L21/28
CPC分类号： H01L21/76254
摘要： The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The crystalline structure of a surface region of the donor substrate is disturbed so as to create a disturbed superficial region within the thickness of the donor substrate, and thus define a disturbance interface between the disturbed superficial region and a subjacent region of the donor substrate for which the crystalline structure remains unchanged. Next, the donor substrate is subjected to a recrystallization annealing in order to at least partial recrystallize of the disturbed region, starting from the crystalline structure of the subjacent region of the donor substrate, and to create a zone of crystalline defects in the plane of the disturbance interface. One or several species are introduced into the thickness of the donor substrate to create the weakened zone, with the species being introduced with introduction parameters that are adjusted to introduce a maximum number of species at the zone of crystalline defects.
摘要翻译：本发明涉及一种从具有有序晶体结构的施主衬底向接收衬底转移薄有用层的方法。该方法包括在施主衬底中产生弱化区以限定要从供体衬底转移的层。施主衬底的表面区域的晶体结构受到干扰，从而在施主衬底的厚度内产生干扰的表面区域，从而限定受干扰的表面区域和施主衬底的下部区域之间的干扰界面，晶体结构保持不变。接下来，对施主衬底进行再结晶退火，以便从施主衬底的下部区域的结晶结构开始至少部分地重新结晶受阻区域，并在该平面内产生晶体缺陷区域扰动界面。将一个或多个物质引入施主衬底的厚度以产生弱化区域，其中引入物质，引入参数被调整以在晶体缺陷区域引入最大数量的物质。

5. 发明授权

US07799651B2 Method of treating interface defects in a substrate 有权
标题翻译：处理基材界面缺陷的方法
公开(公告)号：US07799651B2
公开(公告)日：2010-09-21
申请号：US12165365
申请日：2008-06-30
申请人： Carlos Mazure , Ian Cayrefourcq , Konstantin Bourdelle
发明人： Carlos Mazure , Ian Cayrefourcq , Konstantin Bourdelle
IPC分类号： H01L21/331
CPC分类号： H01L21/187 , H01L21/02381 , H01L21/02532 , H01L21/02667 , H01L21/26506 , H01L21/324 , H01L21/76254 , H01L29/045
摘要： The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.
摘要翻译：本发明涉及一种处理由半导体材料制成的结构的方法，其中该结构包括限定具有缺陷的公共接口的第一和第二基板。所述方法包括形成称为所述无组织层的层，所述层包括所述界面，其中所述晶格的至少一部分被混杂; 并重新组织无组织层的晶格，以迫使缺陷更深地进入第一衬底。

6. 发明授权

US07387947B2 Method for transferring a thin layer including a controlled disturbance of a crystalline structure 有权
标题翻译：用于转移包含晶体结构受控干扰的薄层的方法
公开(公告)号：US07387947B2
公开(公告)日：2008-06-17
申请号：US11305444
申请日：2005-12-16
申请人： Ian Cayrefourcq , Carlos Mazure , Konstantin Bourdelle
发明人： Ian Cayrefourcq , Carlos Mazure , Konstantin Bourdelle
IPC分类号： H01L21/20
CPC分类号： H01L21/76254
摘要： The present invention relates to a method for transferring a thin useful layer from a donor substrate having an ordered crystalline structure to a receiver substrate. The method includes creation of a weakened zone in the donor substrate to define the layer to be transferred from the donor substrate. The crystalline structure of a surface region of the donor substrate is disturbed so as to create a disturbed superficial region within the thickness of the donor substrate, and thus define a disturbance interface between the disturbed superficial region and a subjacent region of the donor substrate for which the crystalline structure remains unchanged. Next, the donor substrate is subjected to a recrystallization annealing in order to at least partial recrystallize of the disturbed region, starting from the crystalline structure of the subjacent region of the donor substrate, and to create a zone of crystalline defects in the plane of the disturbance interface. One or several species are introduced into the thickness of the donor substrate to create the weakened zone, with the species being introduced with introduction parameters that are adjusted to introduce a maximum number of species at the zone of crystalline defects.
摘要翻译：本发明涉及一种从具有有序晶体结构的施主衬底向接收衬底转移薄有用层的方法。该方法包括在施主衬底中产生弱化区以限定要从供体衬底转移的层。施主衬底的表面区域的晶体结构受到干扰，从而在施主衬底的厚度内产生干扰的表面区域，从而限定受干扰的表面区域和施主衬底的下部区域之间的扰动界面，晶体结构保持不变。接下来，对施主衬底进行再结晶退火，以便从施主衬底的下部区域的结晶结构开始至少部分地重新结晶受阻区域，并在该平面内产生晶体缺陷区域扰动界面。将一个或多个物质引入施主衬底的厚度以产生弱化区域，其中引入物质，引入参数被调整以在晶体缺陷区域引入最大数量的物质。

7. 发明申请

US20090014720A1 METHOD OF TREATING INTERFACE DEFECTS IN A SUBSTRATE 有权
标题翻译：处理基板界面缺陷的方法
公开(公告)号：US20090014720A1
公开(公告)日：2009-01-15
申请号：US12165365
申请日：2008-06-30
申请人： Carlos MAZURE , Ian Cayrefourcq , Konstantin Bourdelle
发明人： Carlos MAZURE , Ian Cayrefourcq , Konstantin Bourdelle
IPC分类号： H01L21/30 , H01L29/04
CPC分类号： H01L21/187 , H01L21/02381 , H01L21/02532 , H01L21/02667 , H01L21/26506 , H01L21/324 , H01L21/76254 , H01L29/045
摘要： The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.
摘要翻译：本发明涉及一种处理由半导体材料制成的结构的方法，其中该结构包括限定具有缺陷的公共接口的第一和第二基板。所述方法包括形成称为所述无组织层的层，所述层包括所述界面，其中所述晶格的至少一部分被混杂; 并重新组织无组织层的晶格，以迫使缺陷更深地进入第一衬底。

8. 发明授权

US07176108B2 Method of detaching a thin film at moderate temperature after co-implantation 有权
标题翻译：共植后在中等温度下分离薄膜的方法
公开(公告)号：US07176108B2
公开(公告)日：2007-02-13
申请号：US10703694
申请日：2003-11-06
申请人： Ian Cayrefourcq , Nadia Ben Mohamed , Christelle Lagahe-Blanchard , Nguyet-Phuong Nguyen
发明人： Ian Cayrefourcq , Nadia Ben Mohamed , Christelle Lagahe-Blanchard , Nguyet-Phuong Nguyen
IPC分类号： H01L21/30 , H01L21/425
CPC分类号： H01L21/76254
摘要： A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; and splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.
摘要翻译：从源底层分离薄膜的方法包括以下步骤：在源极衬底中注入离子或气态物质，以便在其中形成由于存在缺陷而被削弱的掩埋区; 并且在弱化区域中分裂，导致薄膜与源基板分离。植入两种植物，其中一种适于形成缺陷，另一种适于占据这些缺陷，该脱离是在低于仅以第一种的剂量获得脱离的温度的温度下进行的。

9. 发明申请

US20060284252A1 Process for holding strain in an island etched in a strained thin layer and structure obtained by implementation of this process 审中-公开
标题翻译：在应变薄层中蚀刻的岛中保持应变的方法和通过实施该方法获得的结构
公开(公告)号：US20060284252A1
公开(公告)日：2006-12-21
申请号：US11214590
申请日：2005-08-29
申请人： Alice Boussagol , Ian Cayrefourcq
发明人： Alice Boussagol , Ian Cayrefourcq
IPC分类号： H01L27/12
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02488 , H01L21/84 , H01L29/7842 , H01L29/7843
摘要： The invention relates to structures useful for the manufacture of electronic components, which comprise a substrate, a strain holding layer, and a layer of a strained semiconducting material. These structures are particularly useful where islands are later formed in the strained semiconducting material because the strain holding layer limits relaxation of stress in the islands. This invention also relates to processes for making a these structures.
摘要翻译：本发明涉及可用于制造电子部件的结构，其包括基底，应变保持层和应变半导体材料层。由于应变保持层限制岛中的应力松弛，因此在应变半导体材料中稍后形成岛状时，这些结构特别有用。本发明还涉及制造这些结构的方法。

10. 发明授权

US06838358B2 Method of manufacturing a wafer 有权
标题翻译：制造晶圆的方法
公开(公告)号：US06838358B2
公开(公告)日：2005-01-04
申请号：US10716900
申请日：2003-11-18
申请人： Thibaut Maurice , Ian Cayrefourcq , Franck Fournel
发明人： Thibaut Maurice , Ian Cayrefourcq , Franck Fournel
IPC分类号： H01L21/02 , H01L21/265 , H01L21/762 , H01L27/12 , H01L21/30
CPC分类号： H01L21/76254
摘要： The present invention relates to a method of manufacturing a wafer in which a heterogeneous material compound is detached at a pre-determined detachment area of the compound, and the compound is subject to a thermal treatment. It is the object of the present invention to provide an easy and effective method of detachment a heterogeneous material compound with a reduced risk of an undefined breaking of the compound. The object is solved by a method wherein the thermal treatment includes annealing the compound, where the annealing is stopped before a detachment of the compound, and an irradiation of the compound with photons in order to obtain a detachment of the compound at the pre-determined detachment area.
摘要翻译：本发明涉及一种制造晶片的方法，其中异相材料化合物在化合物的预定分离区域分离，并且化合物进行热处理。本发明的目的是提供一种易于有效地分离异种材料化合物的方法，该方法降低了化合物未定义破裂的风险。该目的通过一种方法解决，其中热处理包括使化合物退火，其中退火在化合物脱离之前停止，并且化合物与光子的照射以获得化合物在预先确定的位置分离区

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