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1. 发明授权

US4875989A Wafer processing apparatus 失效
标题翻译：晶圆加工设备
公开(公告)号：US4875989A
公开(公告)日：1989-10-24
申请号：US283036
申请日：1988-12-05
申请人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
发明人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
IPC分类号： G03F7/16 , H01L21/00
CPC分类号： H01L21/67017 , G03F7/168
摘要： A processing apparatus and method for edge-preferential processing of partially fabricated integrated circuit wafers or of other substantially flat and thin workpieces. A plasma remote from the workpiece is used to generate activated species, and a baffle which is in proximity to the wafer face but not in contact with it is used to direct the stream of activated species. This module can be set up to perform both edge bead removal and bake of spun-on photoresist.
摘要翻译：一种用于部分制造的集成电路晶片或其它基本上平坦和薄的工件的边缘优先处理的处理装置和方法。使用远离工件的等离子体产生活化物质，并且靠近晶片表面而不与其接触的挡板用于引导活化物质流。该模块可以设置为执行旋转光刻胶的边缘珠去除和烘烤。

2. 发明授权

US4842686A Wafer processing apparatus and method 失效
标题翻译：晶圆加工设备及方法
公开(公告)号：US4842686A
公开(公告)日：1989-06-27
申请号：US75016
申请日：1987-07-17
申请人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
发明人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
IPC分类号： H01L21/302 , C23C16/48 , C23C16/517 , C23C16/54 , G03F7/20 , H01L21/027 , H01L21/3065 , H01L21/31 , H01L21/677
CPC分类号： G03F7/70808 , C23C16/482 , C23C16/517 , C23C16/54 , G03F7/70866
摘要： A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.

3. 发明授权

US4872938A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US4872938A
公开(公告)日：1989-10-10
申请号：US188128
申请日：1988-04-25
申请人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , John I. Jones , Lee M. Loewenstein , James G. Bohlman
发明人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , John I. Jones , Lee M. Loewenstein , James G. Bohlman
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/67115 , H01L21/67751 , H01L21/67796
摘要： A process module which is compatible with a system using vacuum wafer transport in which wafers are generally transported and processed in a face down position under vacuum, and which also includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. In the more nearly vertical position, the wafer can be processed by a top process module, which may be, e.g., a sputter system, an implanter, or an inspection module. Another process module is included in the bottom part of the chamber, so that the wafer can be processed by the lower process module while in its substantially horizontal position and processed by the upper process module when it is in its more nearly vertical position. This is especially advantageous when the lower process module is a plasma cleanup module and the top module is a deposition module.
摘要翻译：一种与使用真空晶片传输的系统兼容的处理模块，其中晶片通常在真空下以正面朝下的位置运输和处理，并且还包括另外的晶片移动，其中在晶片已经朝下放置之后，可以将其固定在基座上的位置，基座从其大致水平位置旋转到更接近垂直的位置。在更接近垂直的位置，晶片可以由顶部工艺模块来处理，顶部工艺模块可以是例如溅射系统，注入机或检查模块。另一个处理模块被包括在腔室的底部，使得晶片在处于其基本上水平的位置时可被下部处理模块处理，并且当其处于更接近垂直的位置时由上部处理模块处理。当下部工艺模块是等离子体清理模块并且顶部模块是沉积模块时，这是特别有利的。

4. 发明授权

US4822450A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4822450A
公开(公告)日：1989-04-18
申请号：US198632
申请日：1988-05-18
申请人： Cecil J. Davis , Lee M. Loewenstein , Rhett B. Jucha , Robert T. Matthews , Randall C. Hildenbrand , Dean W. Freeman , John I. Jones
发明人： Cecil J. Davis , Lee M. Loewenstein , Rhett B. Jucha , Robert T. Matthews , Randall C. Hildenbrand , Dean W. Freeman , John I. Jones
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54 , B44C1/22 , C03C15/00 , C03C25/06 , H01L21/306
CPC分类号： C23C16/54 , C23C16/482 , C23C16/517
摘要： A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.
摘要翻译：一种与用于晶片的真空处理系统兼容的处理装置和方法，其中提供了原位的紫外光源以增强晶片表面的化学活性，并且在晶片上游的工艺气体流中提供远程等离子体源，以向晶片表面提供活化物质，并且还提供辐射耦合的热源，使得晶片可以快速热循环。

5. 发明授权

US4820377A Method for cleanup processing chamber and vacuum process module 失效
标题翻译：净化处理室和真空过程模块的方法
公开(公告)号：US4820377A
公开(公告)日：1989-04-11
申请号：US74422
申请日：1987-07-16
申请人： Cecil J. Davis , Robert T. Matthews , Rhett B. Jucha , Lee M. Loewenstein
发明人： Cecil J. Davis , Robert T. Matthews , Rhett B. Jucha , Lee M. Loewenstein
IPC分类号： C23C14/22 , C23C14/24 , C23C16/48 , C23C16/517 , C23C16/54 , C23F4/00 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23C16/481 , C23C16/517 , C23C16/54 , Y10S438/905
摘要： A process module having remote plasma and in situ plasma generators, and a radiant heater, which represent three separate energy sources. The three sources can be used singly or in any combination and can be separately controllable.

6. 发明授权

US5248636A Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation 失效
标题翻译：使用远程产生的等离子体和原位等离子体与UV照射的处理方法
公开(公告)号：US5248636A
公开(公告)日：1993-09-28
申请号：US892460
申请日：1992-06-02
申请人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54
CPC分类号： C23C16/54 , C23C16/482 , C23C16/517
摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.
摘要翻译：一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击其具有基本上邻接晶片表面的暗空间。原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成足够厚以充当真空密封。

7. 发明授权

US4886570A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4886570A
公开(公告)日：1989-12-12
申请号：US282993
申请日：1988-12-02
申请人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Rhett B. Jucha , Randall C. Hildenbrand , John I. Jones
发明人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Rhett B. Jucha , Randall C. Hildenbrand , John I. Jones
IPC分类号： C23C16/48 , C23C16/517 , C23C16/52 , C23C16/54
CPC分类号： C23C16/482 , C23C16/517 , C23C16/52 , C23C16/54
摘要： A process module having remote plasma and in situ plasma generators, a source of ultraviolet, and a radiant heater, which represent four separate energy sources. The four sources can be used singly or in any combination and can be separately controllable.
摘要翻译：具有远程等离子体和原位等离子体发生器，紫外线源和辐射加热器的处理模块，其表示四个单独的能量源。四种来源可以单独使用，也可以任意组合使用，可单独使用。

8. 发明授权

US4836905A Processing apparatus 失效
标题翻译：处理装置
公开(公告)号：US4836905A
公开(公告)日：1989-06-06
申请号：US75018
申请日：1987-07-16
申请人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , James G. Bohlman , Lee M. Loewenstein , John I. Jones
发明人： Cecil J. Davis , Joseph V. Abernathy , Robert T. Matthews , Randall C. Hildenbrand , Bruce Simpson , James G. Bohlman , Lee M. Loewenstein , John I. Jones
IPC分类号： C23C14/56 , C23F4/00 , H01L21/00 , H01L21/677
CPC分类号： H01L21/67748 , C23C14/50 , C23C14/568 , C23F4/00 , H01L21/67115 , H01L21/67751 , Y10S414/136 , Y10S414/137
摘要： A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.
摘要翻译：允许溅射沉积并与真空处理系统相容的处理装置和方法，其中晶片在面朝下的位置被大量地转移和处理。这包括另外的晶片运动，其中在将晶片面朝下放置之后，可将其固定在基座上的位置，基座从其近似水平的位置旋转到更接近垂直的位置。当晶片处于更接近垂直的位置时，可以进行溅射沉积。原位或远程等离子体能力有效地提供在腔室的底部，从而可以在晶片处于其基本水平的位置时进行干燥的消光或清洁步骤，接着在晶片移动到它更接近垂直的位置。

9. 发明授权

US5138973A Wafer processing apparatus having independently controllable energy sources 失效
标题翻译：具有独立可控能量源的晶片处理装置
公开(公告)号：US5138973A
公开(公告)日：1992-08-18
申请号：US282917
申请日：1988-12-05
申请人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54
CPC分类号： C23C16/482 , C23C16/517 , C23C16/54
摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.
摘要翻译：一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击其具有基本上邻接晶片表面的暗空间。原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。

10. 发明授权

US5102231A Semiconductor wafer temperature measurement system and method 失效
标题翻译：半导体晶圆温度测量系统及方法
公开(公告)号：US5102231A
公开(公告)日：1992-04-07
申请号：US647085
申请日：1991-01-29
申请人： Lee M. Loewenstein , John D. Lawrence , Wayne G. Fisher , Cecil J. Davis
发明人： Lee M. Loewenstein , John D. Lawrence , Wayne G. Fisher , Cecil J. Davis
IPC分类号： G01K5/52
CPC分类号： G01K5/52
摘要： A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.
摘要翻译：用于测量半导体晶片12的温度的系统包括光源14，可操作以确定光强度的光电检测器20和来自分束器16的预定固定位置的反射镜18.部件被定位成使得光从光源14入射分束器16，随后从反射镜18和晶片12反射并被光电检测器20接收。晶片12的温度变化基于接收光强度的变化来计算，取决于晶片的膨胀/收缩。可以基于已知的参考温度和晶片12温度的变化来计算绝对温度。还公开了一种用于测量包括使用多个反射镜和两个分束器的半导体晶片的温度的第二系统和方法。

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