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1. 发明申请

US20120295038A1 METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用基于溶液的前驱体进行原子层沉积的方法和装置
公开(公告)号：US20120295038A1
公开(公告)日：2012-11-22
申请号：US13298574
申请日：2011-11-17
申请人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
发明人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
IPC分类号： C23C16/44 , C23C16/50
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/403 , C23C16/405 , C23C16/409 , C23C16/448 , C23C16/45525
摘要： A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
摘要翻译：提供了具有特殊ALD操作的解决方案稳定和传送技术的独特组合。使用溶解在溶剂中的各种低挥发性固体ALD前体。不稳定的溶质可以在溶液中稳定，并且所有溶液可以在室温下输送。溶液蒸发后，将气相前体和溶剂脉冲进入沉积室，以确保真正的ALD膜生长。

2. 发明授权

US07514119B2 Method and apparatus for using solution based precursors for atomic layer deposition 有权
标题翻译：用于原子层沉积的基于溶液的前体的方法和装置
公开(公告)号：US07514119B2
公开(公告)日：2009-04-07
申请号：US11400904
申请日：2006-04-10
申请人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
发明人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/448 , C23C16/45525 , Y10T428/8305
摘要： A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
摘要翻译：提供了具有特殊ALD操作的解决方案稳定和传送技术的独特组合。使用溶解在溶剂中的各种低挥发性固体ALD前体。不稳定的溶质可以在溶液中稳定，并且所有溶液可以在室温下输送。溶液蒸发后，将气相前体和溶剂脉冲进入沉积室，以确保真正的ALD膜生长。

3. 发明申请

US20100036144A1 METHODS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积的方法
公开(公告)号：US20100036144A1
公开(公告)日：2010-02-11
申请号：US12373913
申请日：2007-07-12
申请人： Ce Ma , Graham McFarlane , Qing Min Wang , Patrick J. Helly
发明人： Ce Ma , Graham McFarlane , Qing Min Wang , Patrick J. Helly
IPC分类号： C23C16/44 , C07F7/28 , C07F7/00 , C07F5/06 , C07F7/24 , C07F15/00
CPC分类号： C23C16/405 , C23C16/45534 , C23C16/45553
摘要： Improved methods for performing atomic layer deposition (ALD) are described. These improved methods provide more complete saturation of the surface reactive sites and provides more complete monolayer surface coverage at each half-cycle of the ALD process. In one embodiment, operating parameters are fixed for a given solvent based precursor. In another embodiment, one operating parameter, e.g. chamber pressure is altered during the precursor deposition to assure full surface saturation.
摘要翻译：描述了改进的执行原子层沉积（ALD）的方法。这些改进的方法提供了表面反应位点的更完全饱和，并且在ALD过程的每个半周期提供更完整的单层表面覆盖。在一个实施方案中，对于给定的基于溶剂的前体，操作参数是固定的。在另一个实施例中，一个操作参数，例如。在前体沉积期间腔室压力被改变以确保全表面饱和。

4. 发明申请

US20100151261A1 METHODS AND APPARATUS FOR THE VAPORIZATION AND DELIVERY OF SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的溶液前驱体的蒸发和输送的方法和装置
公开(公告)号：US20100151261A1
公开(公告)日：2010-06-17
申请号：US12374066
申请日：2007-07-06
申请人： Ce Ma , Patrick J. Helly , Qing Min Wang
发明人： Ce Ma , Patrick J. Helly , Qing Min Wang
IPC分类号： C23C16/44 , C23C16/00 , B32B15/04 , B32B9/00
CPC分类号： C23C16/45544 , C23C16/4481 , H01L21/67109 , Y10T428/31678
摘要： Improved apparatus and methods for atomic layer deposition (ALD) are described—In particular, improved methods and apparatus for the vaporization and delivery of solution ALD precursors are provided. The present invention is particularly useful for processing lower volatile metal, metal oxide, metal nitride and other thin film precursors. The present invention uses total vaporization chambers and room temperature valve systems to generate true ALD vapor pulses while increasing utilization efficiency of the solution precursors.
摘要翻译：描述了用于原子层沉积（ALD）的改进的装置和方法 - 特别地，提供了用于蒸发和递送溶液ALD前体的改进的方法和装置。本发明对于加工低挥发性金属，金属氧化物，金属氮化物和其它薄膜前体特别有用。本发明使用总蒸发室和室温阀系统来产生真实的ALD蒸汽脉冲，同时提高溶液前体的利用效率。

5. 发明授权

US06649540B2 Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film 失效
标题翻译：有机硅烷CVD前体及其制备有机硅烷聚合物低k电介质膜的用途
公开(公告)号：US06649540B2
公开(公告)日：2003-11-18
申请号：US10002042
申请日：2001-11-02
申请人： Qing Min Wang , Ce Ma
发明人： Qing Min Wang , Ce Ma
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/3121
摘要： Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5. The substituted organosilane compounds have the general formula: R1SiR2R3R4 or R5R6R7SiR′SiR8R9R10 or (—R11—)SiR12R13 where, R1 is selected from the group consisting of a cyclic or acyclic hydrocarbon having from one carbon to eight carbon atoms; R2, R3 and R4 are the same or different, and are selected from the groups consisting of H, CH3, vinyl or other hydrocarbon containing two or more carbon atoms; R5, R6, R7, R8, R9, R10 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different, having from one carbon to eight carbon atoms; R′ is a linking group between the two silicon atoms, and can be a cyclic or acyclic hydrocarbon group, having from one carbon to six carbon atoms; R11 is a chelate hydrocarbon group containing two or more carbon atoms, R12 and R13 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different.
摘要翻译：公开了在半导体和集成表面上沉积低k电介质膜的方法。通过化学气相沉积将取代的有机硅烷化合物前体施加到表面，其中它将与表面反应并形成具有小于2.5的介电常数K的膜。取代的有机硅烷化合物具有以下通式：其中，R 1选自具有一个碳原子至八个碳原子的环状或非环状烃; R2，R3和R4相同或不同，选自H，CH3，乙烯基或含有两个或更多个碳原子的其他烃; R5，R6，R7，R8，R9，R10是包含H的环状或非环状烃基，可以相同或不同，具有一个碳原子数为八个的碳原子; R'是两个硅原子之间的连接基团，可以是具有一个碳原子至六个碳原子的环状或非环状烃基; R11是含有两个以上碳原子的螯合烃基，R12和R13是包括H的环状或非环状烃基，可以相同或不同。

6. 发明授权

US06440876B1 Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereof 失效
标题翻译：由具有环内SI-O-C的环状硅氧烷形成的低K介电常数CVD前体及其用途
公开(公告)号：US06440876B1
公开(公告)日：2002-08-27
申请号：US09971837
申请日：2001-10-05
申请人： Qing Min Wang , Ce Ma
发明人： Qing Min Wang , Ce Ma
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/31633
摘要： Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si—O—C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (—O—R1—O—)SiR2R3 or the formula (—R1—O—)SiR2R3.
摘要翻译：公开了在半导体和集成电路的表面上沉积低k电介质膜的方法。通过化学气相沉积将Si-O-C-环状硅氧烷前体化合物施加到表面上，其中它将与表面反应并形成介电常数k小于2.5的膜。化合物通常具有式（-O-R 1 -O-）SiR 2 R 3或式（-R 1-O）SiR 2 R 3）。

7. 发明申请

US20100055321A1 PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积的前驱体
公开(公告)号：US20100055321A1
公开(公告)日：2010-03-04
申请号：US12374414
申请日：2007-07-12
申请人： Ce Ma , Qing Min Wang
发明人： Ce Ma , Qing Min Wang
IPC分类号： C23C16/448 , C09D1/00
CPC分类号： C23C16/405 , C07F9/005 , C23C16/45525 , C23C16/45553
摘要： Stable ALD precursors that have at least one metal-nitrogen bond and a mixed ligand are presented. These ALD precursors exhibit self-limiting growth, at reduced deposition temperature and produce less contamination all with enhanced stability.
摘要翻译：提出了具有至少一个金属 - 氮键和混合配体的稳定的ALD前体。这些ALD前体在降低的沉积温度下表现出自限制的生长，并且以增强的稳定性产生更少的污染物。

8. 发明申请

US20090305504A1 SINGLE PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：单原子沉积物的单一前体
公开(公告)号：US20090305504A1
公开(公告)日：2009-12-10
申请号：US12374343
申请日：2007-07-02
申请人： Ce Ma , Qing Min Wang
发明人： Ce Ma , Qing Min Wang
IPC分类号： H01L21/3205 , C07F19/00 , C07F7/28 , C07F5/06 , H01L21/31
CPC分类号： C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45553
摘要： Single precursors for use in flash ALD processes are disclosed. These precursors have the general formula: XmM(OR)n or XpM(O2R′)q where M is Hf, Zr, Ti, Al, or Ta; X is a ligand that can interact with surface hydroxyl sites; OR and O2R′ are alkoxyl groups with R and R′ containing two or more carbon atoms; m+n=3 to 5; p+2q=3 to 5; and m, n, p, q≠0. Further precursors have the general formula: (R12N)mM(═NR2)n or (R3CN2R42)pM(═NR2)q where M is Hf, Zr, Ti, or Ta; R12N is an amino group with R1 containing two or more carbon atoms; NR2 is an imido group with R2 containing two or more carbon atoms; R3 and R4 are alkyl groups; m+2n=4 or 5; p+2q=4 or 5; and m, n, p, q≠0. Flash ALD methods using these precursors are also described.
摘要翻译：公开了用于闪光ALD工艺的单一前体。这些前体具有以下通式：XmM（OR）n或XpM（O 2 R'）q，其中M是Hf，Zr，Ti，Al或Ta; X是可以与表面羟基位点相互作用的配体; OR和O 2 R'是具有两个或更多个碳原子的R和R'的烷氧基; m + n = 3〜5; p + 2q = 3〜5; 和m，n，p，q0。其它前体具有以下通式：（R 12 N）mM（-NR 2）n或（R 3 CN 2 R 42）p M（-NR 2）q，其中M是Hf，Zr，Ti或Ta; R12N是具有含有两个或更多个碳原子的R 1的氨基; NR2是含有两个或更多个碳原子的R2的亚氨基; R3和R4是烷基; m + 2n = 4或5; p + 2q = 4或5; 和m，n，p，q0。还描述了使用这些前体的闪光ALD方法。

9. 发明授权

US06572923B2 Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film 失效
公开(公告)号：US06572923B2
公开(公告)日：2003-06-03
申请号：US10042889
申请日：2002-01-09
申请人： Ce Ma , Qing Min Wang
发明人： Ce Ma , Qing Min Wang
IPC分类号： C23C1416
CPC分类号： H01L21/3122 , C09D4/00 , H01L21/02126 , H01L21/02216 , H01L21/02274 , Y10T428/31663 , C08G77/04
摘要： Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.

10. 发明授权

US08343580B2 Organometallic compounds 有权
标题翻译：有机金属化合物
公开(公告)号：US08343580B2
公开(公告)日：2013-01-01
申请号：US12881896
申请日：2010-09-14
申请人： Qing Min Wang , Deodatta Vinayak Shenai-Khatkhate , Huazhi Li
发明人： Qing Min Wang , Deodatta Vinayak Shenai-Khatkhate , Huazhi Li
IPC分类号： C23C16/18 , C23C18/44
CPC分类号： C23C16/16 , C23C16/18 , C23C16/30 , C23C16/4486 , C23C16/45523 , C23C16/45525
摘要： Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.
摘要翻译：公开了使用含有含羰基配体的某些有机金属化合物气相沉积含金属膜的方法。

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