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1. 发明申请

US20050145909A1 Magnetoresistive device and electronic device 审中-公开
标题翻译：磁阻器件和电子器件
公开(公告)号：US20050145909A1
公开(公告)日：2005-07-07
申请号：US11064230
申请日：2005-02-23
申请人： Carsten Giebeler , Kars-Michiel Lenssen , Stephan Zilker , Reinder Coehoorn
发明人： Carsten Giebeler , Kars-Michiel Lenssen , Stephan Zilker , Reinder Coehoorn
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/82 , H01L43/08 , H01L43/10 , H01L31/062
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/15 , G11C11/16 , G11C13/0014 , G11C13/025 , H01F10/32 , H01F10/3254 , H01L29/82 , H01L43/08 , H01L43/10
摘要： A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.
摘要翻译：具有横向结构并且设置有有机半导体材料的非磁性间隔层（3）的磁阻器件（11）允许附加电极（19）的存在。利用该电极（19），将开关功能集成到装置（11）中。优选地，存在用于保护铁磁层（1,2）的导电层（13,23）。磁阻装置（11）适于集成到阵列中以用作MRAM装置。

2. 发明申请

US20070164264A1 Storage system using an array of electro-magnetic sensors 审中-公开
标题翻译：存储系统使用一系列电磁传感器
公开(公告)号：US20070164264A1
公开(公告)日：2007-07-19
申请号：US10529680
申请日：2003-09-30
申请人： Kars-Michiel Lenssen , Hendrik Van Houten
发明人： Kars-Michiel Lenssen , Hendrik Van Houten
IPC分类号： H01L47/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/03 , G11B5/09 , G11B5/3909 , G11B5/3932 , G11B5/4886 , G11B5/4984 , G11B5/743 , G11B5/82 , G11B9/14 , G11B9/1445 , G11B9/1454 , G11B9/1472 , G11B9/1481 , G11B11/007 , G11B11/08 , G11B23/0014 , G11B2005/0002 , G11B2005/0005 , G11B2005/0008 , G11C11/02 , G11C11/16
摘要： A record carrier (40) of a removable type has an information plane that is provided with a pattern of an electro-magnetic material constituting an array of bit locations (11). The presence or absence of said material at the information plane represent the value of a bit location. The device has an interface surface (32) for cooperating with the information plane. The interface surface is provided with an array of electro-magnetic sensor elements (54,56) that are sensitive to the presence of said electro-magnetic material within a near-field working distance. The record carrier and device system have alignment means (38,41) for positioning the bit locations near the sensor elements within the near-field working distance between a bit location and the corresponding sensor when the record carrier is mounted in the device.
摘要翻译：可拆卸式的记录载体（40）具有设置有构成钻头位置（11）阵列的电磁材料的图案的信息平面。在信息平面处存在或不存在所述材料表示位位置的值。该设备具有用于与信息平面配合的接口表面（32）。接口表面设置有在近场工作距离内对所述电磁材料的存在敏感的电磁传感器元件阵列（54,56）。记录载体和装置系统具有对准装置（38,41），用于当记录载体安装在装置中时，将位置靠近传感器元件的位位置定位在钻头位置与对应的传感器之间的近场工作距离内。

3. 发明申请

US20070058422A1 Programmable magnetic memory device 审中-公开
标题翻译：可编程磁存储器件
公开(公告)号：US20070058422A1
公开(公告)日：2007-03-15
申请号：US10529685
申请日：2003-09-30
申请人： Gavin Phillips , Kars-Michiel Lenssen
发明人： Gavin Phillips , Kars-Michiel Lenssen
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11B5/00 , G11B5/488 , G11B5/4907 , G11B2005/0002 , G11B2005/0021
摘要： A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate writing device (21). The writing device provides at least one beam of radiation (26) for heating the electro-magnetic material at the bit locations to a programming temperature. The magnetic state of the bit locations is programmed by applying a magnetic field during said heating of selected bit locations via the beams of radiation. Hence the memory device provides a magnetic read-only memory (MROM) that cannot be (re-)programmed without the proper writing device.
摘要翻译：存储器件具有信息平面（32），用于存储在位阵列（31）处的电磁材料的磁状态下的数据位。该装置还具有与位位置对准的电磁传感器元件阵列（51）。信息平面（32）可通过单独的写入装置（21）进行编程或编程。写入装置提供至少一个辐射束（26），用于将位置处的电磁材料加热到编程温度。位位置的磁状态通过在通过辐射束的所选位位置的加热期间施加磁场来编程。因此，存储器件提供磁性只读存储器（MROM），其不能在没有适当的写入设备的情况下被编程（重新编程）。

4. 发明申请

US20050094435A1 Increased magnetic stability devices suitable for use as sub-micron memories 审中-公开
标题翻译：适用于亚微米存储器的增加的磁稳定装置
公开(公告)号：US20050094435A1
公开(公告)日：2005-05-05
申请号：US10499256
申请日：2002-12-16
申请人： Murray Gillies , Kars-Michiel Lenssen
发明人： Murray Gillies , Kars-Michiel Lenssen
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15 , G11C11/16
摘要： Magnetic device cells such as MRAM cells are described which can be used in sub-micron cell sizes. The present invention describes a method of stabilising magnetic device cells by creating a storage state where the two magnetisation directions of the spin valve are anti-parallel when no readout is performed. This avoids the problem at such small dimensions, that the parallel state of magnetisation directions in a spin valve or a spin tunnel junction become unstable. A high coercivity memory layer is combined with a low coercivity keeper layer. The read out process has also been simplified: only one pulse over the bit line and measurement of the resistance in the word line is sufficient to determine the data stored in a magnetic device cell according to the present invention.
摘要翻译：描述了可以以亚微米级细胞大小使用的磁性器件细胞，例如MRAM细胞。本发明描述了一种通过产生存储状态来稳定磁性器件单元的方法，其中当不执行读出时，自旋阀的两个磁化方向是反平行的。这避免了在这样小的尺寸下的问题，即自旋阀或自旋隧道结中的磁化方向的平行状态变得不稳定。高矫顽力记忆层与低矫顽力保持层组合。读出过程也被简化：根据本发明，在位线上只有一个脉冲和字线中的电阻的测量足以确定存储在磁性器件单元中的数据。

5. 发明申请

US20070140099A1 Read-only magnetic memory device mrom 审中-公开
标题翻译：只读磁记忆体装置
公开(公告)号：US20070140099A1
公开(公告)日：2007-06-21
申请号：US10529678
申请日：2003-09-12
申请人： Kars-Michiel Lenssen , Hendrik Van Houten
发明人： Kars-Michiel Lenssen , Hendrik Van Houten
IPC分类号： G11C17/02
CPC分类号： G11C11/16 , G11C11/15 , G11C17/02
摘要： A storage device has an information carrier part (10) and a read-out part (30). The information carrier part (10) is provided with a pattern of an electro-magnetic material constituting an array of bit locations (11) and the presence or absence of said material at the information plane represents the logical value. The read-out part has a two-dimensional array (31) of electro-magnetic sensor elements that are sensitive to the presence of said electro-magnetic material on a near-field working distance. During manufacture the parts are fixedly coupled and aligned for positioning the bit locations opposite the sensor elements.
摘要翻译：存储装置具有信息载体部分（10）和读出部分（30）。信息载体部分（10）具有构成比特位置（11）阵列的电磁材料的图形，并且在信息平面处存在或不存在所述材料代表逻辑值。读出部分具有在近场工作距离上对所述电磁材料的存在敏感的电磁传感器元件的二维阵列（31）。在制造期间，部件被固定地联接和对准以便定位与传感器元件相对的钻头位置。

6. 发明申请

US20070055815A1 Storage system using electromagnetic array 审中-公开
标题翻译：存储系统采用电磁阵列
公开(公告)号：US20070055815A1
公开(公告)日：2007-03-08
申请号：US10529686
申请日：2003-09-12
申请人： Kars-Michiel Lenssen , Hendrik Van Houten
发明人： Kars-Michiel Lenssen , Hendrik Van Houten
IPC分类号： G06F13/28
CPC分类号： B82Y10/00 , G11B5/00 , G11B5/49 , G11B5/4907 , G11B5/4969 , G11B9/1418 , G11B9/1445 , G11B9/1481 , G11B2005/0002 , G11B2005/0005 , G11C11/15
摘要： A record carrier (40) of a removable type has an information plane of a layer of magnetic material on a substrate constituting an array of bit locations (11). A magnetic state of the material represents the value of each bit location. A storage device (35) has an interface surface (32) for cooperating with the information plane. The interface surface has an array (31) of electro-magnetic elements that are sensitive to said magnetic state of the electro-magnetic material. The record carrier and device have alignment elements (38, 41) for positioning the bit locations near the electro-magnetic elements within a near-field working distance between a bit location and the corresponding electro-magnetic element when the record carrier is mounted in the device.
摘要翻译：可拆卸式的记录载体（40）在构成钻头位置（11）的阵列的基板上具有磁性材料层的信息平面。材料的磁状态表示每个位位置的值。存储装置（35）具有用于与信息平面配合的接口面（32）。界面表面具有对电磁材料的所述磁状态敏感的电磁元件阵列（31）。记录载体和装置具有对准元件（38,41），用于在记录载体安装在位置位置和对应的电磁元件之间的位置和对应的电磁元件之间的近场工作距离内，将电子元件附近的位位置定位设备。

7. 发明申请

US20060146597A1 Hardware security device for magnetic memory cells 有权
标题翻译：磁性存储单元的硬件安全装置
公开(公告)号：US20060146597A1
公开(公告)日：2006-07-06
申请号：US10539795
申请日：2003-12-15
申请人： Kars-Michiel Lenssen , Adrianus Denissen , Nicolaas Lambert
发明人： Kars-Michiel Lenssen , Adrianus Denissen , Nicolaas Lambert
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L23/57 , G11C11/16 , G11C11/1695 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether it has been tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, or can reset itself or block its functioning.
摘要翻译：本发明提供了一种磁性元件的特殊结构。 MRAM元件（10,11），作为用于包含磁存储器单元的IC的安全装置（30）。该结构可以包括具有预设的反并联磁化方向的两个或更多个相关联的磁性元件（10,11）的组合。通过确定磁性元件的极化方向，可以检测到暴露于外部磁场。反偏振方向表示正常情况，对准偏振方向表示MRAM阵列暴露于外部场。以这种方式，可以检测是否以非法方式擦除或更改存储在MRAM中的数据。 IC可以在运行期间定期检查安全系统的电阻。在检测到场曝光时，IC可以擦除所有的MRAM数据，或者可以自动复位或阻止其功能。

8. 发明申请

US20050157539A1 Memories and memory circuits 审中-公开
标题翻译：记忆和记忆电路
公开(公告)号：US20050157539A1
公开(公告)日：2005-07-21
申请号：US10513873
申请日：2003-04-25
申请人： Pieter Van Der Zaag , Martin Edwards , Kars-Michiel Lenssen
发明人： Pieter Van Der Zaag , Martin Edwards , Kars-Michiel Lenssen
IPC分类号： G11C11/00 , G11C11/16 , G11C14/00
CPC分类号： G11C14/0081 , G11C11/16
摘要： Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises two MRAMs (60, 62), each coupled to a respective input of a flip-flop circuit (64). A display device (1) is provided comprising a plurality of pixels (20) each associated with a memory circuit (25). One of the MRAMs is a switchable MRAM (60), the other MRAM is a reference MRAM (62) arranged to provide a reference by which the changed states of the switchable MRAM (60) may be readily observed and measured in the form of a differential.
摘要翻译：磁阻随机存取存储器（MRAM）用于为显示设备提供像素内存电路。存储器电路（25）包括两个MRAM（60,62），每个MRAM耦合到触发器电路（64）的相应输入端。提供一种显示装置（1），其包括与存储电路（25）相关联的多个像素（20）。 MRAM中的一个是可切换MRAM（60），另一个MRAM是被配置为提供参考的参考MRAM（62），通过该参考，可以容易地观察和测量可切换MRAM（60）的改变状态，微分。

9. 发明授权

US10039957B2 Goggles, system and method for providing feedback 有权
公开(公告)号：US10039957B2
公开(公告)日：2018-08-07
申请号：US13878271
申请日：2011-09-20
申请人： Pavankumar Murli Dadlani Mahtani , Warner Rudolph Theophile Ten Kate , Jochen Renaat Van Gheluwe , Kars-Michiel Lenssen
发明人： Pavankumar Murli Dadlani Mahtani , Warner Rudolph Theophile Ten Kate , Jochen Renaat Van Gheluwe , Kars-Michiel Lenssen
IPC分类号： A63B33/00 , A61F9/02 , A63B71/06
摘要： The present invention relates to goggles (10) for providing feedback, in particular to a user, comprising at least one transparent portion (14) forming at least a portion of at least one glass (14) of the goggles (10), display means (18) for displaying light signals, wherein the display means (18) are integrated in the transparent portion (14), cover a surface of the transparent portion (14) at least partially and/or cover a surface of a frame (12) of the goggles (10) around the glass (14) at least partially, drive means (20) coupled to the display means (18) for providing signals to the display means (18) corresponding to the light signals to be displayed.

10. 发明授权

US08432355B2 In-plane switching display devices 有权
标题翻译：平面内切换显示装置
公开(公告)号：US08432355B2
公开(公告)日：2013-04-30
申请号：US12090133
申请日：2006-09-14
申请人： Mark Thomas Johnson , Alwin Rogier Martijn Verschueren , Martinus Hermanus Wilhelmus Maria Van Delden , Sander Jurgen Roosendaal , Kars-Michiel Lenssen
发明人： Mark Thomas Johnson , Alwin Rogier Martijn Verschueren , Martinus Hermanus Wilhelmus Maria Van Delden , Sander Jurgen Roosendaal , Kars-Michiel Lenssen
IPC分类号： G09G3/34
CPC分类号： G09G3/3446 , G09G3/2011 , G09G3/2014 , G09G3/2018 , G09G2300/0426 , G09G2300/0434 , G09G2300/06 , G09G2310/06 , G09G2310/063 , G09G2320/0209 , G09G2320/0233 , G09G2320/0252
摘要： A drive method is provided for a display device using the movement of 5 charged particles with a pixel area, with each pixel having first and second drive electrodes (20,23; 22) and a pixel electrode (26). The method comprises a reset phase to move the particles in each pixel towards the first drive electrode (20,23), a pixel data loading phase, to cause selected particles either to stay in the vicinity of the first drive electrode (20,23) or move towards the 10 pixel electrode (26), and a drive phase to distribute the particles which have moved towards the pixel electrode over the pixel electrode (26). The address phase is line-by-line but can be made short, and the other phases can be carried out in parallel for all pixels, saving time.
摘要翻译：使用具有像素区域的5个带电粒子的移动的显示装置提供驱动方法，每个像素具有第一和第二驱动电极（20,23; 22）和像素电极（26）。该方法包括复位阶段，以将每个像素中的粒子朝向第一驱动电极（20,23）移动像素数据加载阶段，以使选定的粒子停留在第一驱动电极（20,23）附近，或朝向10像素电极（26）移动，以及驱动相以分散已经朝像素电极（26）移动的像素电极的粒子。地址阶段是逐行的，但可以缩短，其他阶段可以并行执行所有像素，从而节省时间。

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