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    • 1. 发明申请
    • INFRARED LIGHT SENSOR HAVING A HIGH SIGNAL VOLTAGE AND A HIGH SIGNAL/NOISE RATIO
    • 具有高信号电压和高信号/噪声比的红外光传感器
    • US20120132807A1
    • 2012-05-31
    • US13264908
    • 2010-04-16
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • G01J5/10
    • G01J5/34G01J5/08G01J5/0846
    • An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
    • 一种用于红外光检测器(1)的红外光传感器,包括基板膜部分(2)和至少两个传感器芯片(7至10),它们在基板膜部分(2)上彼此紧固并且每个 包括由热敏材料制成并与基底电极(12)和头部电极(13)电接触的层元件(11),并且被布置成使得在每个情况下在头部电极之间存在电压差 (11)被红外线照射时,各层元件(11)的基极(13)和基极(12) 和连接线(14〜16),用于两个相邻布置的传感器芯片(7至10),耦合线将一个传感器芯片(7至9)的头部电极(13)和基极(12) )以使得传感器芯片(7至10)的层元件(11)连接在串联电路中,该串联电路具有一个基极电极 (17)和其另一端的头电极(18)中的一个,串联电路的总电压差可以抽头作为层元件(11)的各个电压差之和, 。
    • 2. 发明授权
    • Infrared light sensor having a high signal voltage and a high signal/noise ratio
    • 红外光传感器具有高信号电压和高信噪比
    • US08963087B2
    • 2015-02-24
    • US13264908
    • 2010-04-16
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • G01J5/34G01J5/08
    • G01J5/34G01J5/08G01J5/0846
    • An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
    • 一种用于红外光检测器(1)的红外光传感器,包括基板膜部分(2)和至少两个传感器芯片(7至10),它们在基板膜部分(2)上彼此紧固并且每个 包括由热敏材料制成并与基底电极(12)和头部电极(13)电接触的层元件(11),并且被布置成使得在每个情况下在头部电极之间存在电压差 (11)被红外线照射时,各层元件(11)的基极(13)和基极(12) 和连接线(14〜16),用于两个相邻布置的传感器芯片(7至10),耦合线将一个传感器芯片(7至9)的头部电极(13)和基极(12) )以使得传感器芯片(7至10)的层元件(11)连接在串联电路中,该串联电路具有一个基极电极 (17)和其另一端的头电极(18)中的一个,串联电路的总电压差可以抽头作为层元件(11)的各个电压差之和, 。
    • 4. 发明申请
    • Method and apparatus for output driver calibration
    • 输出驱动器校准的方法和装置
    • US20070263459A1
    • 2007-11-15
    • US11432421
    • 2006-05-10
    • Kang KimJeffrey Wright
    • Kang KimJeffrey Wright
    • G11C7/00
    • G11C7/1051G11C7/1069G11C29/02G11C29/022G11C29/028G11C29/50008G11C2207/2254
    • An output driver calibration circuit determines calibration values for configuring adjustable impedance output drivers. Output drivers are calibrated by generating a first variable count in response to comparing a reference voltage to a first voltage at a calibration terminal when an external load is connected. A first pull-up impedance circuit is varied in response to a first variable count and varying an impedance in a second variable pull-up impedance circuit in response to the first variable count. A second variable count is generated responsive to comparing the reference voltage to a second voltage at a reference node between the second variable pull-up impedance circuit and a serially connected to a variable pull-down impedance circuit. The impedance to the variable pull-down impedance circuit is varied in response to the second variable count. The first and second variable counts for configuring the output drivers are output when a steady state is achieved.
    • 输出驱动器校准电路确定用于配置可调阻抗输出驱动器的校准值。 当外部负载连接时,响应于将参考电压与校准端子处的第一电压进行比较,产生第一变量计数来校准输出驱动器。 第一上拉阻抗电路响应于第一可变计数而变化,并响应于第一可变计数改变第二可变上拉阻抗电路中的阻抗。 响应于将参考电压与第二可变上拉阻抗电路与串联连接到可变下拉阻抗电路的参考节点处的第二电压进行比较而产生第二可变计数。 可变下拉阻抗电路的阻抗响应于第二可变计数而变化。 当实现稳定状态时,输出用于配置输出驱动器的第一个和第二个变量计数。
    • 6. 发明申请
    • APPARATUS HAVING A SCREENED STRUCTURE FOR DETECTING THERMAL RADIATION
    • 具有用于检测热辐射的筛选结构的装置
    • US20110024628A1
    • 2011-02-03
    • US12808745
    • 2008-07-30
    • Jeffrey Wright
    • Jeffrey Wright
    • H01L31/0203
    • G01J5/04G01J5/0285G01J5/045H01L27/14618H01L2924/0002H01L2924/00
    • An apparatus for detecting radiation has a substrate, a protective housing fitting on the substrate, which has an electrically conductive material and a top facing away from the substrate, and that has an aperture therein. A stack is fitted on the substrate inside the protective housing and includes at least one detector substrate having at least one thermal detector element thereon that converts incoming thermal radiation into an electrical signal, at least one circuit carrier having at least one read circuit for reading out the electrical signal, and at least one cover that covers the detector element. The detector substrate is located between the circuit substrate and the cover. The detector substrate and the cover are arranged on each other such that the detector element of the detector substrate and the cover have at least one first stack cavity of the stack therebetween, the stack cavity being defined by the detector support and the cover. The circuit substrate and the detector substrate are arranged on each other such that the detector substrate and the circuit substrate have at least one second stack cavity therebetween, the second stack cavity being defined by the circuit substrate and the detector substrate. At least one of the first stack cavity and the second stack cavity is evacuated. The stack top that faces the substrate is accessible from outside of the protective housing.
    • 用于检测辐射的装置具有衬底,衬底上的保护壳体配件,其具有导电材料和背离衬底的顶部,并且其中具有孔。 堆叠被安装在保护壳体内的衬底上,并且包括至少一个检测器衬底,其上具有至少一个热检测器元件,其将进入的热辐射转换成电信号,至少一个电路载体具有至少一个用于读出的读取电路 电信号和覆盖检测器元件的至少一个盖。 检测器基板位于电路基板和盖子之间。 检测器基板和盖彼此布置,使得检测器基板和盖的检测器元件具有其间的堆叠的至少一个第一堆叠空腔,堆叠腔由检测器支撑件和盖限定。 电路基板和检测器基板彼此布置,使得检测器基板和电路基板之间具有至少一个第二堆叠空腔,第二堆叠腔由电路基板和检测器基板限定。 将第一堆叠腔和第二堆叠腔中的至少一个排空。 面向基板的堆叠顶部可从保护外壳的外部进入。
    • 8. 发明授权
    • Memory device and method having multiple address, data and command buses
    • 具有多个地址,数据和命令总线的存储器件和方法
    • US07283418B2
    • 2007-10-16
    • US11190270
    • 2005-07-26
    • James CullumJeffrey Wright
    • James CullumJeffrey Wright
    • G11C8/00
    • G11C8/12G11C7/1012G11C11/408G11C11/4096G11C2207/107
    • A dynamic random access memory (“DRAM”) device includes a pair of internal address buses that are selectively coupled to an external address bus by an address multiplexer, and a pair of internal data buses that are selectively coupled to an external data bus by a data multiplexer. The DRAM device also includes a bank multiplexer for each bank of memory cells that selectively couples one of the internal address buses and one of the internal data buses to the respective bank of memory cells. Select signals generated by a command decoder cause the multiplexers to select alternate internal address and data buses responsive to each memory command received by the command decoder.
    • 动态随机存取存储器(“DRAM”)器件包括一对内部地址总线,其通过地址多路复用器选择性地耦合到外部地址总线,以及一对内部数据总线,其通过以下方式选择性地耦合到外部数据总线 数据多路复用器。 DRAM设备还包括用于每一组存储器单元的存储体多路复用器,其将内部地址总线和内部数据总线中的一个选择性地耦合到相应存储单元组。 选择由命令解码器产生的信号使得多路复用器响应于命令解码器接收的每个存储器命令来选择备用的内部地址和数据总线。