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1. 发明申请

US20060121702A1 III-nitride light emitting devices fabricated by substrate removal 有权
公开(公告)号：US20060121702A1
公开(公告)日：2006-06-08
申请号：US11330209
申请日：2006-01-10
申请人： Carrie Coman , Fred Kish , Michael Krames , Paul Martin
发明人： Carrie Coman , Fred Kish , Michael Krames , Paul Martin
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0216 , H01S5/0421 , H01S5/18341 , H01S5/32341
摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.

2. 发明申请

US20060011935A1 Light extraction from a semiconductor light emitting device via chip shaping 有权
标题翻译：通过芯片成形从半导体发光器件进行光提取
公开(公告)号：US20060011935A1
公开(公告)日：2006-01-19
申请号：US11230722
申请日：2005-09-19
申请人： Michael Krames , Fred Kish , Tun Tan
发明人： Michael Krames , Fred Kish , Tun Tan
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
摘要翻译：公开了一种用于设计半导体发光器件的方法，其中侧表面（不平行于外延层的表面）以相对于垂直（垂直于发光有源层的平面）的优选角度形成，以提高光提取效率，提高总光输出效率。选择器件设计以提高效率，而不需要由于成形而过度的有效面积产量损失。因此，这些设计适用于具有改进特性的半导体发光器件的低成本，大批量制造。

3. 发明申请

US20060240585A1 Package-Integrated Thin Film LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US20060240585A1
公开(公告)日：2006-10-26
申请号：US11421350
申请日：2006-05-31
申请人： John Epler , Paul Martin , Michael Krames
发明人： John Epler , Paul Martin , Michael Krames
IPC分类号： H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

4. 发明申请

US20060091409A1 Package-integrated thin film LED 有权
公开(公告)号：US20060091409A1
公开(公告)日：2006-05-04
申请号：US10977294
申请日：2004-10-28
申请人： John Epler , Paul Martin , Michael Krames
发明人： John Epler , Paul Martin , Michael Krames
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

5. 发明申请

US20060163606A1 Photonic crystal light emitting device 有权
标题翻译：光子晶体发光装置
公开(公告)号：US20060163606A1
公开(公告)日：2006-07-27
申请号：US11373636
申请日：2006-03-09
申请人： Jonathan Wierer , Michael Krames , John Epler
发明人： Jonathan Wierer , Michael Krames , John Epler
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译：在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。在与有源区相对的p型区域的表面上形成反射体。在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成在光子晶体下面的p型区域的表面上的反射器。光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

6. 发明申请

US20050205883A1 Photonic crystal light emitting device 审中-公开
标题翻译：光子晶体发光装置
公开(公告)号：US20050205883A1
公开(公告)日：2005-09-22
申请号：US10804810
申请日：2004-03-19
申请人： Jonathan Wierer , Michael Krames , John Epler
发明人： Jonathan Wierer , Michael Krames , John Epler
IPC分类号： H01L33/00 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译：在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。在与有源区相对的p型区域的表面上形成反射体。在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成在光子晶体下面的p型区域的表面上的反射器。光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

7. 发明申请

US20080023719A1 Light Emitting Devices with Improved Light Extraction Efficiency 有权
标题翻译：具有提高光提取效率的发光装置
公开(公告)号：US20080023719A1
公开(公告)日：2008-01-31
申请号：US11868903
申请日：2007-10-08
申请人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
发明人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
摘要翻译：提供了具有提高光提取效率的发光器件。发光器件具有包括有源区的半导体层的一叠层。叠层结合到透明光学元件上。

8. 发明申请

US20070145384A1 III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region 有权
标题翻译：具有双异质结构发光区域的III型氮化物发光器件
公开(公告)号：US20070145384A1
公开(公告)日：2007-06-28
申请号：US11682276
申请日：2007-03-05
申请人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
发明人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要翻译：在器件中，III族氮化物发光层设置在n型区域和p型区域之间。设置在n型区域和发光层之间的第一间隔层被掺杂到掺杂剂浓度为6×10 18 cm -3和5×10 6 19厘米-3 -3。设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到掺杂剂浓度小于6×10 -3 -3 -3倍 >。

9. 发明申请

US20070045653A1 Selective filtering of wavelength-converted semiconductor light emitting devices 失效
标题翻译：波长转换半导体发光器件的选择滤波
公开(公告)号：US20070045653A1
公开(公告)日：2007-03-01
申请号：US11400057
申请日：2006-04-07
申请人： Michael Krames , Gerd Mueller , Regina Mueller-Mach
发明人： Michael Krames , Gerd Mueller , Regina Mueller-Mach
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/50 , H01L2224/14
摘要： A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.
摘要翻译：一种结构包括半导体发光器件，其包括设置在n型区域和p型区域之间的发光层。发光层发射第一峰值波长的第一光。吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。

10. 发明申请

US20060197100A1 Reverse polarization light emitting region for a semiconductor light emitting device 有权
标题翻译：用于半导体发光器件的反向偏振发光区域
公开(公告)号：US20060197100A1
公开(公告)日：2006-09-07
申请号：US11226185
申请日：2005-09-13
申请人： Yu-Chen Shen , Michael Krames , Nathan Gardner
发明人： Yu-Chen Shen , Michael Krames , Nathan Gardner
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/32 , H01L33/16
摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.
摘要翻译：半导体发光器件包括设置在n型区域和p型区域之间的发光层。发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

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