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1. 发明申请

US20080023719A1 Light Emitting Devices with Improved Light Extraction Efficiency 有权
标题翻译：具有提高光提取效率的发光装置
公开(公告)号：US20080023719A1
公开(公告)日：2008-01-31
申请号：US11868903
申请日：2007-10-08
申请人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
发明人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
摘要翻译：提供了具有提高光提取效率的发光器件。发光器件具有包括有源区的半导体层的一叠层。叠层结合到透明光学元件上。

2. 发明申请

US20050032257A1 Method of forming light emitting devices with improved light extraction efficiency 有权
标题翻译：形成具有改进的光提取效率的发光器件的方法
公开(公告)号：US20050032257A1
公开(公告)日：2005-02-10
申请号：US10938237
申请日：2004-09-10
申请人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
发明人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
IPC分类号： H01L33/20 , H01L33/40 , H01L33/58 , H01L21/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： A method of bonding a transparent optical element to a light emitting device having a stack of layers including semiconductor layers comprising an active region is provided. The method includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the stack together. In one embodiment, the method also includes disposing a layer of a transparent bonding material between the stack and the optical element. The bonding method can be applied to a premade optical element or to a block of optical element material which is later formed or shaped into an optical element such as a lens or an optical concentrator.
摘要翻译：提供了一种将透明光学元件结合到具有包括包括有源区域的半导体层的层叠层的发光器件的方法。该方法包括升高光学元件和叠层的温度并施加压力以将光学元件和叠层压在一起。在一个实施例中，该方法还包括在叠层和光学元件之间设置透明粘结材料层。接合方法可以应用于预制光学元件或稍后形成或成形为诸如透镜或聚光器的光学元件的光学元件材料块。

3. 发明申请

US20070045653A1 Selective filtering of wavelength-converted semiconductor light emitting devices 失效
标题翻译：波长转换半导体发光器件的选择滤波
公开(公告)号：US20070045653A1
公开(公告)日：2007-03-01
申请号：US11400057
申请日：2006-04-07
申请人： Michael Krames , Gerd Mueller , Regina Mueller-Mach
发明人： Michael Krames , Gerd Mueller , Regina Mueller-Mach
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/50 , H01L2224/14
摘要： A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.
摘要翻译：一种结构包括半导体发光器件，其包括设置在n型区域和p型区域之间的发光层。发光层发射第一峰值波长的第一光。吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。

4. 发明申请

US20050269582A1 Luminescent ceramic for a light emitting device 有权
标题翻译：用于发光器件的发光陶瓷
公开(公告)号：US20050269582A1
公开(公告)日：2005-12-08
申请号：US10861172
申请日：2004-06-03
申请人： Gerd Mueller , Regina Mueller-Mach , Michael Krames , Peter Schmidt , Hans-Helmut Bechtel , Joerg Meyer , Jan de Graaf , Theo Kop
发明人： Gerd Mueller , Regina Mueller-Mach , Michael Krames , Peter Schmidt , Hans-Helmut Bechtel , Joerg Meyer , Jan de Graaf , Theo Kop
IPC分类号： C04B35/44 , C04B35/547 , C04B35/584 , C04B35/597 , C04B35/645 , H01L33/50 , H01L33/58 , H01L33/64 , H01L29/22
CPC分类号： H01L33/502 , C04B35/44 , C04B35/547 , C04B35/584 , C04B35/597 , C04B35/6268 , C04B35/64 , C04B35/645 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3286 , C04B2235/6027 , C04B2235/662 , C09K11/7774 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/50 , H01L33/501 , H01L33/505 , H01L33/508 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L33/641 , H01L33/644 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0075 , H01L2924/00
摘要： A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
摘要翻译：包括设置在n型区域和p型区域之间的发光层的半导体发光器件与设置在由发光层发射的光的路径中的陶瓷层组合。陶瓷层由磷光体等波长转换材料构成或包含波长转换材料。根据本发明的实施例的发光陶瓷层可以比现有技术的荧光体层更坚固并且对温度不太敏感。此外，发光陶瓷可能表现出更少的散射，因此可以提高现有技术荧光体层的转换效率。

5. 发明授权

US08740413B1 System and method for providing color light sources in proximity to predetermined wavelength conversion structures 有权
标题翻译：用于在预定波长转换结构附近提供彩色光源的系统和方法
公开(公告)号：US08740413B1
公开(公告)日：2014-06-03
申请号：US13328978
申请日：2011-12-16
申请人： Michael Krames , Troy Trottier , Frank Steranka , William Houck , Arpan Chakraborty
发明人： Michael Krames , Troy Trottier , Frank Steranka , William Houck , Arpan Chakraborty
IPC分类号： F21V9/00 , F21V9/16 , F21V21/00 , H01J63/04 , H01L33/00
CPC分类号： H01L33/504 , F21K9/00 , F21K9/232 , F21V29/70 , F21Y2105/10 , F21Y2105/12 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L27/156 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.
摘要翻译：光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分第二辐射源。

6. 发明申请

US20060105478A1 Bonding an optical element to a light emitting device 有权
标题翻译：将光学元件结合到发光器件
公开(公告)号：US20060105478A1
公开(公告)日：2006-05-18
申请号：US10987241
申请日：2004-11-12
申请人： Michael Camras , William Imler , Franklin Wall , Frank Steranka , Michael Krames , Helena Ticha , Ladislav Tichy
发明人： Michael Camras , William Imler , Franklin Wall , Frank Steranka , Michael Krames , Helena Ticha , Ladislav Tichy
IPC分类号： H01L21/00
CPC分类号： H05B33/0857 , H01L25/0753 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.
摘要翻译：设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。或者，可以使用多个光学元件。光学元件或LED管芯可以用波长转换材料的涂层覆盖。在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

7. 发明申请

US20070131961A1 AlInGaP LED Having Reduced Temperature Dependence 有权
标题翻译：具有降低温度依赖性的AlInGaP LED
公开(公告)号：US20070131961A1
公开(公告)日：2007-06-14
申请号：US11672003
申请日：2007-02-06
申请人： Michael Krames , Nathan Gardner , Frank Steranka
发明人： Michael Krames , Nathan Gardner , Frank Steranka
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/30 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.
摘要翻译：为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

8. 发明申请

US20060220031A1 A1lnGaP LED having reduced temperature dependence 有权
标题翻译： AlInGaP LED具有降低的温度依赖性
公开(公告)号：US20060220031A1
公开(公告)日：2006-10-05
申请号：US11100080
申请日：2005-04-05
申请人： Michael Krames , Nathan Gardner , Frank Steranka
发明人： Michael Krames , Nathan Gardner , Frank Steranka
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.
摘要翻译：为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

9. 发明申请

US20070145384A1 III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region 有权
标题翻译：具有双异质结构发光区域的III型氮化物发光器件
公开(公告)号：US20070145384A1
公开(公告)日：2007-06-28
申请号：US11682276
申请日：2007-03-05
申请人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
发明人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要翻译：在器件中，III族氮化物发光层设置在n型区域和p型区域之间。设置在n型区域和发光层之间的第一间隔层被掺杂到掺杂剂浓度为6×10 18 cm -3和5×10 6 19厘米-3 -3。设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到掺杂剂浓度小于6×10 -3 -3 -3倍 >。

10. 发明申请

US20050224826A1 Optical system for light emitting diodes 失效
标题翻译：发光二极管光学系统
公开(公告)号：US20050224826A1
公开(公告)日：2005-10-13
申请号：US10804314
申请日：2004-03-19
申请人： Matthijs Keuper , Michael Krames , Gerd Mueller
发明人： Matthijs Keuper , Michael Krames , Gerd Mueller
IPC分类号： G03B21/00 , G02F1/13357 , G03B21/14 , H01L33/00 , H01L33/16 , H01L33/32 , H01L33/44
CPC分类号： H04N9/3152 , H01L33/0004 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/44 , H01L33/507 , H01L33/60
摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.
摘要翻译：发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。波长转换材料例如设置在出射表面上。即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。如果需要，可以在分束器和微显示器之间设置集中器元件。

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