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    • 1. 发明授权
    • Method for dry etching of transition metals
    • 过渡金属的干蚀刻方法
    • US5814238A
    • 1998-09-29
    • US542149
    • 1995-10-12
    • Carol I. H. AshbyAlbert G. BacaPeter EsherickJohn E. ParmeterDennis J. RiegerRandy J. Shul
    • Carol I. H. AshbyAlbert G. BacaPeter EsherickJohn E. ParmeterDennis J. RiegerRandy J. Shul
    • C23F4/00H01L21/3213B44C1/22C03C15/00C23F1/00
    • C23F4/00H01L21/32136
    • A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.
    • 一种干法蚀刻过渡金属的方法。 过渡金属(或过渡金属合金如硅化物)在基板上的干蚀刻方法包括在过渡金属附近提供至少一种含氮或磷的pi受体配体,并蚀刻过渡金属 以形成挥发性过渡金属/π-受体配体复合物。 干蚀刻可以在诸如反应离子蚀刻(RIE)系统,下游等离子体蚀刻系统(等离子体余辉),化学辅助离子束蚀刻(CAIBE)系统等等的等离子体蚀刻系统中进行。 干蚀刻也可以通过直接从配体源气体(例如由一氧化氮产生的亚硝酰基配体)或与激发的粒子例如光子,电子,离子,原子或分子的接触产生直接受体配体来进行。 在本发明的一些优选实施方案中,中间反应物种如羰基或卤化物配体用于与过渡金属的初始化学反应,其中中间反应物种至少部分被pi受体配体替代 形成挥发性过渡金属/π-受体配体复合物。