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1. 发明授权

US5814238A Method for dry etching of transition metals 失效
标题翻译：过渡金属的干蚀刻方法
公开(公告)号：US5814238A
公开(公告)日：1998-09-29
申请号：US542149
申请日：1995-10-12
申请人： Carol I. H. Ashby , Albert G. Baca , Peter Esherick , John E. Parmeter , Dennis J. Rieger , Randy J. Shul
发明人： Carol I. H. Ashby , Albert G. Baca , Peter Esherick , John E. Parmeter , Dennis J. Rieger , Randy J. Shul
IPC分类号： C23F4/00 , H01L21/3213 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： C23F4/00 , H01L21/32136
摘要： A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.
摘要翻译：一种干法蚀刻过渡金属的方法。过渡金属（或过渡金属合金如硅化物）在基板上的干蚀刻方法包括在过渡金属附近提供至少一种含氮或磷的pi受体配体，并蚀刻过渡金属以形成挥发性过渡金属/π-受体配体复合物。干蚀刻可以在诸如反应离子蚀刻（RIE）系统，下游等离子体蚀刻系统（等离子体余辉），化学辅助离子束蚀刻（CAIBE）系统等等的等离子体蚀刻系统中进行。干蚀刻也可以通过直接从配体源气体（例如由一氧化氮产生的亚硝酰基配体）或与激发的粒子例如光子，电子，离子，原子或分子的接触产生直接受体配体来进行。在本发明的一些优选实施方案中，中间反应物种如羰基或卤化物配体用于与过渡金属的初始化学反应，其中中间反应物种至少部分被pi受体配体替代形成挥发性过渡金属/π-受体配体复合物。

2. 发明授权

US06592835B1 Silica substrate or portion formed from oxidation of monocrystalline silicon 有权
标题翻译：二氧化硅衬底或由单晶硅的氧化形成的部分
公开(公告)号：US06592835B1
公开(公告)日：2003-07-15
申请号：US09836594
申请日：2001-04-16
申请人： Carolyn M. Matzke , Dennis J. Rieger , Robert V. Ellis
发明人： Carolyn M. Matzke , Dennis J. Rieger , Robert V. Ellis
IPC分类号： C01B3312
CPC分类号： C30B29/06 , C30B33/005
摘要： A method is disclosed for forming an inclusion-free silica substrate using a monocrystalline silicon substrate as the starting material and oxidizing the silicon substrate to convert it entirely to silica. The oxidation process is performed from both major surfaces of the silicon substrate using a conventional high-pressure oxidation system. The resulting product is an amorphous silica substrate which is expected to have superior etching characteristics for microfabrication than conventional fused silica substrates. The present invention can also be used to convert only a portion of a monocrystalline silicon substrate to silica by masking the silicon substrate and locally thinning a portion the silicon substrate prior to converting the silicon portion entirely to silica. In this case, the silica formed by oxidizing the thinned portion of the silicon substrate can be used, for example, as a window to provide optical access through the silicon substrate.
摘要翻译：公开了一种使用单晶硅衬底作为起始材料形成不包含二氧化硅衬底并氧化硅衬底以将其完全转化为二氧化硅的方法。使用常规的高压氧化系统从硅衬底的两个主表面进行氧化处理。所得产物是无定形二氧化硅基质，预期其具有优于常规熔融石英基质的微细加工蚀刻特性。本发明还可用于通过掩蔽硅衬底并将硅衬底全部转化为二氧化硅之前局部变薄硅衬底的一部分，将一部分单晶硅衬底转换成二氧化硅。在这种情况下，通过氧化硅衬底的薄化部分形成的二氧化硅可以用作例如通过硅衬底的光学接近的窗口。

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