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    • 10. 发明授权
    • Drive circuit for N-channel power MOS transistors of push-pull stages
    • 用于推挽级N沟道功率MOS晶体管的驱动电路
    • US4727465A
    • 1988-02-23
    • US897467
    • 1986-08-18
    • Carlo CiniClaudio DiazziDomenico Rossi
    • Carlo CiniClaudio DiazziDomenico Rossi
    • H03K5/02H03F3/20H03F3/30H03K5/153H03K17/04H03K17/0412H03K17/042H03K17/06H03K17/687H03K19/017H02M3/335
    • H03K17/04206H03K17/04123H03K17/6874H03K19/01714
    • This circuit, for reliably driving a load both in DC and AC mode with a low dissipation, comprises a pair of MOS power transistors, in a push-pull configuration, and a bootstrap circuit including a bootstrap capacitor placed between the source of the upper MOS transistor and a reference voltage point, through a first switch. A second switch is arranged between the supply line and the gate of the upper MOS transistor, while a third switch is arranged between the gate of the upper MOS transistor and the point common to the first switch and the bootstrap capacitor. During DC operation, the switches are open or closed in order to allow for the connection of the gate of the MOS power transistor to the supply voltage. During AC operation, the switches are controlled thereby, alternately the capacitor is charged at the voltage of the reference voltage point and the upper MOS transistor is held at a gate-to-source voltage sufficient to feed the load.
    • 该电路用于可靠地驱动具有低功耗的直流和交流模式的负载,包括一对推挽配置的MOS功率晶体管,以及自举电路,该自举电路包括置于上MOS源之间的自举电容器 晶体管和参考电压点,通过第一开关。 第二开关设置在上MOS晶体管的电源线和栅极之间,而第三开关设置在上MOS晶体管的栅极和第一开关共用的点与自举电容之间。 在直流操作期间,开关是开或关的,以便将MOS功率晶体管的栅极连接到电源电压。 在交流运行期间,由此控制开关,交替地,电容器以参考电压点的电压被充电,并且上MOS晶体管被保持在足以馈送负载的栅极 - 源极电压。