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1. 发明公开

EP2197034A2 Field effect transistor and display apparatus 有权
标题翻译： Feldeffekttransistor和Anzeigevorrichtung
公开(公告)号：EP2197034A2
公开(公告)日：2010-06-16
申请号：EP09014995.6
申请日：2009-12-03
申请人： Canon Kabushiki Kaisha
发明人： Ueda, Miki , Iwasaki, Tatsuya , Itagaki, Naho , Goyal, Amita
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78696
摘要： A field-effect transistor provided with at least a semiconductor layer (11) and a gate electrode (15) disposed over the above-described semiconductor layer (11) with a gate insulating film (12) therebetween, wherein the above-described semiconductor layer (11) includes a first amorphous oxide semiconductor layer (11a) having at least one element selected from the group of Zn and In, and a second amorphous oxide semiconductor layer (11b) having at least one element selected from the group of Ge and Si and at least one element selected from the group of Zn and In. The composition of the above-described first amorphous oxide semiconductor layer (11a) is different from the composition of the above-described second amorphous oxide semiconductor layer (11b).
摘要翻译：一种场效应晶体管，在其间具有设置在上述半导体层（11）上的至少半导体层（11）和栅电极（15），其间具有栅极绝缘膜（12），其中上述半导体层（11）包括具有选自Zn和In中的至少一种元素的第一非晶氧化物半导体层（11a）和具有选自Ge和Si中的至少一种元素的第二非晶氧化物半导体层（11b）和选自Zn和In的至少一种元素。上述第一非晶氧化物半导体层（11a）的组成与上述第二非晶氧化物半导体层（11b）的组成不同。

2. 发明公开

EP3174191A1 ULTRASONIC MOTOR WITH ANNULAR PIEZOELECTRIC VIBRATOR FOR OPTICAL APPARATUS 有权
标题翻译：带环形压电振子的超声波电机在光学仪器中的应用
公开(公告)号：EP3174191A1
公开(公告)日：2017-05-31
申请号：EP16002384.2
申请日：2016-11-11
申请人： Canon Kabushiki Kaisha
发明人： Uebayashi, Akira , Furuta, Tatsuo , Ueda, Miki , Tanaka, Hidenori , Koyama, Shinya , Miura, Kaoru , Kimura, Atsushi , Fujita, Satoshi
IPC分类号： H02N2/16 , H01L41/187 , G02B7/10
CPC分类号： H02N2/04 , G02B7/08 , G02B7/102 , H01L41/1871 , H02N2/062 , H02N2/163
摘要： Provided is an ultrasonic motor including an annular vibrator and an annular moving member that is brought into pressure-contact with the vibrator. The vibrator includes an annular vibrating plate and an annular piezoelectric element. The piezoelectric element includes an annular lead-free piezoelectric ceramic piece, a common electrode arranged on one surface of the piezoelectric ceramic piece, and a plurality of electrodes arranged on the other surface of the piezoelectric ceramic piece. The plurality of electrodes include two drive phase electrodes, one or more non-drive phase electrodes, and one or more detection phase electrodes. A second surface of the vibrating plate includes a plurality of groove regions extending radially, and the depths of the groove regions change in a circumferential direction along a curve obtained by superimposing one or more sine waves on one another. The ultrasonic motor exhibits a sufficient drive speed while suppressing generation of an unnecessary vibration wave.
摘要翻译：本发明提供一种超声波马达，该超声波马达具备环状的振子以及与该振子压接的环状的移动部件。振动器包括环形振动板和环形压电元件。压电元件包括环形无铅压电陶瓷片，布置在压电陶瓷片的一个表面上的公共电极以及布置在压电陶瓷片的另一个表面上的多个电极。多个电极包括两个驱动相电极，一个或多个非驱动相电极以及一个或多个检测相电极。振动板的第二表面包括多个径向延伸的凹槽区域，并且凹槽区域的深度沿着通过将一个或多个正弦波彼此叠加而获得的曲线在圆周方向上改变。超声波马达在抑制不必要的振动波的产生的同时表现出足够的驱动速度。

3. 发明授权

EP2197034B1 Field effect transistor and display apparatus 有权
标题翻译：场效应晶体管和显示装置
公开(公告)号：EP2197034B1
公开(公告)日：2012-09-19
申请号：EP09014995.6
申请日：2009-12-03
申请人： Canon Kabushiki Kaisha
发明人： Ueda, Miki , Iwasaki, Tatsuya , Itagaki, Naho , Goyal, Amita
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78696

4. 发明公开

EP2197034A3 Field effect transistor and display apparatus 有权
标题翻译：场效应晶体管及显示装置
公开(公告)号：EP2197034A3
公开(公告)日：2010-06-30
申请号：EP09014995.6
申请日：2009-12-03
申请人： Canon Kabushiki Kaisha
发明人： Ueda, Miki , Iwasaki, Tatsuya , Itagaki, Naho , Goyal, Amita
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78696
摘要： A field-effect transistor provided with at least a semiconductor layer (11) and a gate electrode (15) disposed over the above-described semiconductor layer (11) with a gate insulating film (12) therebetween, wherein the above-described semiconductor layer (11) includes a first amorphous oxide semiconductor layer (11a) having at least one element selected from the group of Zn and In, and a second amorphous oxide semiconductor layer (11b) having at least one element selected from the group of Ge and Si and at least one element selected from the group of Zn and In. The composition of the above-described first amorphous oxide semiconductor layer (11a) is different from the composition of the above-described second amorphous oxide semiconductor layer (11b).

5. 发明授权

EP3174191B1 ULTRASONIC MOTOR WITH ANNULAR PIEZOELECTRIC VIBRATOR FOR OPTICAL APPARATUS 有权
公开(公告)号：EP3174191B1
公开(公告)日：2019-03-13
申请号：EP16002384.2
申请日：2016-11-11
申请人： Canon Kabushiki Kaisha
发明人： Uebayashi, Akira , Furuta, Tatsuo , Ueda, Miki , Tanaka, Hidenori , Koyama, Shinya , Miura, Kaoru , Kimura, Atsushi , Fujita, Satoshi
IPC分类号： H02N2/16 , H01L41/187 , G02B7/10

6. 发明公开

EP2423966A1 Field effect transistor and display apparatus 审中-公开
标题翻译： Feldeffekttransistor und Display-Apparat
公开(公告)号：EP2423966A1
公开(公告)日：2012-02-29
申请号：EP11009309.3
申请日：2009-12-03
申请人： CANON KABUSHIKI KAISHA
发明人： Ueda, Miki , Iwasaki, Tatsuya , Itagaki, Naho , Goyal, Amita
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78696
摘要： A field-effect transistor, which is a thin film transistor, comprises: a semiconductor layer (11) as a channel layer; and a gate electrode (15) disposed over the semiconductor layer (11) with a gate insulating film (12) therebetween, wherein the semiconductor layer includes a first amorphous oxide semiconductor layer (11a) comprising Zn and In, the semiconductor layer further comprises a second amorphous oxide semiconductor layer (11b) comprising Zn and In, the composition ratio, Zn/(In + Zn), of Zn contained in the first amorphous oxide semiconductor layer (11a) is smaller than the composition ratio, Zn/(In + Zn), of Zn contained in the second amorphous oxide semiconductor layer (11b), and the first amorphous oxide semiconductor layer is disposed between the gate insulating layer and the second amorphous oxide semiconductor layer.
摘要翻译：作为薄膜晶体管的场效应晶体管包括：作为沟道层的半导体层（11）; 以及设置在所述半导体层（11）上方的栅电极（15），其间具有栅极绝缘膜（12），其中所述半导体层包括包含Zn和In的第一非晶氧化物半导体层（11a），所述半导体层还包括包含Zn和In的第二非晶氧化物半导体层（11b）中，包含在第一非晶氧化物半导体层（11a）中的Zn的组成比Zn /（In + Zn）小于组成比，Zn /（In + Zn），包含在第二非晶氧化物半导体层（11b）中的Zn，并且第一非晶氧化物半导体层设置在栅极绝缘层和第二非晶氧化物半导体层之间。

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