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1. 发明申请

WO2006104233A1 FREQUENCY TUNABLE OSCILLATOR 审中-公开
标题翻译：频率调节振荡器
公开(公告)号：WO2006104233A1
公开(公告)日：2006-10-05
申请号：PCT/JP2006/306992
申请日：2006-03-27
申请人： CANON KABUSHIKI KAISHA , SEKIGUCHI, Ryota , OUCHI, Toshihiko
发明人： SEKIGUCHI, Ryota , OUCHI, Toshihiko
IPC分类号： H03B7/14
CPC分类号： H03B5/1847 , H01P7/088 , H03B7/143 , H03B2200/0022
摘要： There is provided a frequency tunable oscillator that has less degradation of oscillation characteristics due to a parasitic reactance component or the like without mounting therein a lumped constant element such as a variable capacitance element. The frequency tunable oscillator includes a negative resistance element and a resonator which together form a feedback circuit. The frequency tunable oscillator further includes in at least a part of the feedback circuit, a distributed constant material so configured as to have a distributed constant such that an electrical length in the resonator is modulated, and a modification means for externally modifying the distributed constant material, wherein the oscillation frequency can be varied through the external modification by the modification means.
摘要翻译：提供了一种频率可调振荡器，由于寄生电抗分量等而具有较少的振荡特性劣化，而不会在其中安装诸如可变电容元件的集总常数元件。频率可调谐振荡器包括一个形成反馈电路的负电阻元件和谐振器。频率可调谐振荡器还包括在反馈电路的至少一部分中，分布常数材料被配置为具有分布常数，使得谐振器中的电长度被调制，以及用于外部修改分布常数材料的修改装置，其中可以通过修改装置的外部修改来改变振荡频率。

2. 发明申请

WO2009028715A1 LASER DEVICE 审中-公开
标题翻译：激光装置
公开(公告)号：WO2009028715A1
公开(公告)日：2009-03-05
申请号：PCT/JP2008/065788
申请日：2008-08-27
申请人： CANON KABUSHIKI KAISHA , SEKIGUCHI, Ryota
发明人： SEKIGUCHI, Ryota
IPC分类号： H01S1/02 , H01S5/227 , H01S5/34 , H01S5/10
CPC分类号： H01S1/02 , B82Y20/00 , H01S5/1046 , H01S5/20 , H01S5/3402
摘要： Provided is a long wavelength laser of which the operating point is stabilized and the laser oscillation is stabilized. The long wavelength laser comprises a resistor element provided to a portion where the surface current is maximum in a surface plasmon waveguide to stabilize a potential difference between a first cladding and a second cladding in the surface plasmon waveguide.
摘要翻译：提供了工作点稳定并且激光振荡稳定的长波长激光器。长波长激光器包括设置在表面等离子体激元波导中表面电流最大的部分的电阻元件，以稳定表面等离子体波导中的第一包层和第二包层之间的电位差。

3. 发明申请

WO2015129910A2 OSCILLATION ELEMENT AND OSCILLATOR USING THE SAME 审中-公开
标题翻译：使用振动元件和振荡器
公开(公告)号：WO2015129910A2
公开(公告)日：2015-09-03
申请号：PCT/JP2015/056025
申请日：2015-02-24
申请人： CANON KABUSHIKI KAISHA
发明人： SEKIGUCHI, Ryota
IPC分类号： H03H7/01
CPC分类号： H03B7/12 , H03B7/08 , H03B9/12 , H03H7/0123 , H03H7/1741 , H03H7/383 , H03H11/52
摘要： An oscillation element that oscillates an electromagnetic wave includes a negative resistance element and a resonator including a first conductor and a second conductor, in which the negative resistance element and the resonator are arranged on a substrate, the negative resistance element is electrically connected to the first conductor and the second conductor, the first conductor and the second conductor are capacitively coupled to each other, and when a capacitance between the first conductor and the second conductor is set as C, an inductance of the first conductor and the second conductor is set as L 1 , a speed of the oscillated electromagnetic wave in vacuum is set as C 0 , a relative dielectric constant of the substrate is set as ε r , and a diagonal line length of the substrate is set as d, a series resonant frequency f 1 of the resonator satisfies f 1 = 1/{2π√(L 1 C)}, and f 1 0 /[d√ {(1+ ε r )/2}].
摘要翻译：振荡电磁波的振荡元件包括负电阻元件和包括第一导体和第二导体的谐振器，其中负电阻元件和谐振器布置在基板上，负电阻元件电连接到第一导体和第二导体，第一导体和第二导体彼此电容耦合，并且当第一导体和第二导体之间的电容被设置为C时，第一导体和第二导体的电感被设置为 L1，将真空中的振荡电磁波的速度设定为C0，将基板的相对介电常数设为εr，将基板的对角线长度设为d，共振器的串联谐振频率f1满足 f1 = 1 / {2π√（L1C）}，f1

4. 发明申请

WO2014136698A1 IMAGE FORMING APPARATUS AND IMAGING SYSTEM 审中-公开
标题翻译：图像形成装置和成像系统
公开(公告)号：WO2014136698A1
公开(公告)日：2014-09-12
申请号：PCT/JP2014/055200
申请日：2014-02-25
申请人： CANON KABUSHIKI KAISHA
发明人： SEKIGUCHI, Ryota , OUCHI, Toshihiko
IPC分类号： G01S17/89 , G01S7/491 , G01N21/00 , G01N22/00
CPC分类号： H04N5/357 , G01N21/3581 , G01N22/02 , G01S7/4914 , G01S17/89 , H01L27/14609 , H01L27/14643 , H04N5/3745
摘要： Provided by the present invention is an image forming apparatus wherein a signal to noise ratio is improved without reducing a video rate of a real-time moving image. The image forming apparatus comprises: a pixel 101 having an electromagnetic wave detecting element 111 configured to detect an electromagnetic wave; a switch 110 configured to read out a signal from the pixel; a signal generating unit 102 configured to generate a signal 114 having a predetermined period, wherein the pixel is connected to a transmission line 103 for supplying, to the pixel, the signal having the predetermined period, and to a scanning line 106 and 107 for reading out the signal from the pixel through the switch, and the pixel has a frequency converting element 113 configured to convert a frequency of a detection signal of the electromagnetic wave detecting element, using the signal having the predetermined period.
摘要翻译：本发明提供一种在不降低实时运动图像的视频速率的情况下提高信噪比的图像形成装置。图像形成装置包括：具有电磁波检测元件111的像素101，被配置为检测电磁波; 被配置为从像素读出信号的开关110; 信号生成单元102，其被配置为生成具有预定周期的信号114，其中该像素连接到用于向像素提供具有预定周期的信号的传输线103以及用于读取的扫描线106和107 通过开关从像素输出信号，并且像素具有频率转换元件113，其被配置为使用具有预定周期的信号来转换电磁波检测元件的检测信号的频率。

5. 发明申请

WO2008075795A1 ELECTRICALLY TUNABLE TERAHERTZ LASER OSCILLATION DEVICE 审中-公开
标题翻译：电动可调TERAHERTZ激光振荡装置
公开(公告)号：WO2008075795A1
公开(公告)日：2008-06-26
申请号：PCT/JP2007/075234
申请日：2007-12-20
申请人： CANON KABUSHIKI KAISHA , SEKIGUCHI, Ryota , OUCHI, Toshihiko
发明人： SEKIGUCHI, Ryota , OUCHI, Toshihiko
IPC分类号： H01S1/02 , H01S5/0625 , H01S5/34 , H01S5/227 , H01S5/30
CPC分类号： H01S1/02 , B82Y20/00 , H01S5/06255 , H01S5/06256 , H01S5/2213 , H01S5/227 , H01S5/3027 , H01S5/3031 , H01S5/3402 , H01S5/3422
摘要： To provide an oscillation device having a long oscillation wavelength (THz) in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium (103) having a gain with respect to an electromagnetic wave to be oscillated, cavity structures (104, 105) for resonating the electromagnetic wave, and energy injection means (121, 122A) and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium (102, 112) and a second magnetic permittivity medium (101, 111) each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means (122B) is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.
摘要翻译：为了提供具有波长可变宽度相对较宽且波长扫描速率相对较高的长振荡波长（THz）的振荡装置。本发明公开了一种振荡装置，包括：相对于要振荡的电磁波具有增益的增益介质（103），用于谐振电磁波的腔结构（104,105），以及能量注入装置（121,122A），并用于注入泵浦能量进入增益介质。增益介质夹在第一负介电常数介质（102,112）和第二介电常数介质（101,111）之间，每个介质的介电常数相对于电磁波的实部为负值。为第一负介电常数介质和第二负介电常数介质中的至少一个提供电场施加装置（122B）以施加用于改变在与增益介质的边界部分处形成的耗尽区的电场。

6. 发明申请

WO2015098073A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2015098073A1
公开(公告)日：2015-07-02
申请号：PCT/JP2014/006359
申请日：2014-12-22
申请人： CANON KABUSHIKI KAISHA
发明人： SEKIGUCHI, Ryota , OUCHI, Toshihiko
IPC分类号： H01L27/144 , G01N21/3581 , H01L31/108 , H01L31/112 , H01L31/18 , H01L29/872 , H01L27/07
CPC分类号： H01L31/1123 , G01J1/44 , G01J2001/4446 , G01N21/3581 , H01L27/0629 , H01L27/1463 , H01L27/14649 , H01L27/14689 , H01L29/66143 , H01L29/872 , H01L31/1085 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.
摘要翻译：半导体器件包括硅衬底和布置在硅衬底上的检测元件和p型和n型MOS晶体管，其中检测元件包括半导体层，电极和设置在其间的肖特基势垒，半导体层位于具有与p型或n型MOS晶体管的源极或漏极中的杂质扩散层相同的组成和高度的层的正上方，硅衬底中具有相同组成的区域，以及在硅衬底中刚好在p型MOS晶体管或n型MOS晶体管的栅极氧化膜的下方或硅衬底中的具有相同组成和高度的区域中的沟道区的高度，位于p型和n型MOS晶体管之间的场氧化膜的正下方的区域。

7. 发明申请

WO2011027672A1 OSCILLATION CIRCUIT HAVING NEGATIVE DIFFERENTIAL RESISTANCE ELEMENT AND OSCILLATOR USING THE OSCILLATION CIRCUIT 审中-公开
标题翻译：使用振荡电路的具有负差分电阻元件和振荡器的振荡电路
公开(公告)号：WO2011027672A1
公开(公告)日：2011-03-10
申请号：PCT/JP2010/064037
申请日：2010-08-13
申请人： CANON KABUSHIKI KAISHA , KOYAMA, Yasushi , SEKIGUCHI, Ryota
发明人： KOYAMA, Yasushi , SEKIGUCHI, Ryota
IPC分类号： H03B7/08
CPC分类号： H03B7/08
摘要： An oscillation circuit including: a negative resistance element; a resonance circuit connected to the negative resistance element; and a stabilization circuit connected in parallel with the negative resistance element to suppress parasitic oscillation, wherein the stabilization circuit includes a variable shunt resistor and a adjusting device for adjusting the shunt resistor.
摘要翻译：一种振荡电路，包括：负电阻元件; 连接到负电阻元件的谐振电路; 以及与所述负电阻元件并联连接以抑制寄生振荡的稳定电路，其中所述稳定电路包括可变分流电阻器和用于调节所述分流电阻器的调节装置。

8. 发明申请

WO2010109841A1 OSCILLATOR 审中-公开
标题翻译：振荡器
公开(公告)号：WO2010109841A1
公开(公告)日：2010-09-30
申请号：PCT/JP2010/002019
申请日：2010-03-23
申请人： CANON KABUSHIKI KAISHA , KOYAMA, Yasushi , SEKIGUCHI, Ryota
发明人： KOYAMA, Yasushi , SEKIGUCHI, Ryota
IPC分类号： H03B7/14
CPC分类号： H03B7/08 , H03B7/14
摘要： An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.
摘要翻译：振荡器包括谐振器部分，其被构造成使得电介质插入在第一和第二导体之间，并且使得第一和第二导体电连接到谐振隧穿二极管，电容器部分被构造成使得电介质插入在第一和第二导体之间导体，被配置为将谐振器部分和电容器部分彼此并联地电连接的线路部分和被配置为将第一和第二导体彼此电连接的电阻部分。谐振器部分的第一位置和电容器部分的第二位置通过线路部分彼此连接，使得第一位置和第二位置在大于波长的波长范围内彼此基本上电等价谐振器部分谐振的电磁波。

9. 发明申请

WO2007029758A2 SENSOR DEVICE 审中-公开
标题翻译：传感器装置
公开(公告)号：WO2007029758A2
公开(公告)日：2007-03-15
申请号：PCT/JP2006/317697
申请日：2006-08-31
申请人： CANON KABUSHIKI KAISHA , SEKIGUCHI, Ryota , HANDA, Yoichiro , OUCHI, Toshihiko
发明人： SEKIGUCHI, Ryota , HANDA, Yoichiro , OUCHI, Toshihiko
IPC分类号： G01N21/55 , G01N21/35
CPC分类号： G01N21/553 , G01N21/3577 , G01N21/3581
摘要： It has been requested to enhance sensitivity of a surface plasmon resonance sensor in a frequency region from a millimeter wave band to a terahertz band, from 30 GHz to 30 THz. Then, the present invention provides a sensor whose sensitivity is further improved by an analyte holding portion being equipped with a semiconductor and a medium.
摘要翻译：已经要求在从30GHz到30THz的从毫米波段到太赫兹波段的频率区域中提高表面等离子体共振传感器的灵敏度。然后，本发明提供了一种传感器，其灵敏度通过配备有半导体和介质的分析物保持部分进一步提高。

10. 发明申请

WO2013008687A1 DIODE ELEMENT AND DETECTING DEVICE 审中-公开
标题翻译：二极体元件和检测器件
公开(公告)号：WO2013008687A1
公开(公告)日：2013-01-17
申请号：PCT/JP2012/067020
申请日：2012-06-27
申请人： CANON KABUSHIKI KAISHA , SEKIGUCHI, Ryota , KOTO, Makoto
发明人： SEKIGUCHI, Ryota , KOTO, Makoto
IPC分类号： H01L31/108 , H01L31/0224 , H01L29/872 , H01L29/06
CPC分类号： H01L29/872 , H01L27/14 , H01L27/14612 , H01L27/14643 , H01L29/0619 , H01L29/456 , H01L31/022408 , H01L31/108
摘要： Provided is a diode element, a detecting device, and the like which solve problems of a conventional lateral diode element. In the conventional element, a semiconductor interface appears in current path between two electrodes on a surface thereof, and thus noise caused by the interface is large. The diode element includes: a first-conductive-type low carrier concentration layer (103); a first-conductive-type high carrier concentration layer (102); and a Schottky electrode (104) and an ohmic electrode (105) which are formed on a semiconductor surface. The low carrier layer (103) has a carrier concentration that is lower than that of the high carrier layer (102). The diode element includes a first-conductive-type impurity introducing region (106) formed below the ohmic electrode (105), and includes a second-conductive-type impurity introducing region (107) so as not to be in electrical contact with the Schottky electrode (104) on the semiconductor surface between the Schottky electrode (104) and the ohmic electrode (105). The second-conductive-type region (107) is in contact with the first-conductive-type region (106).
摘要翻译：提供了解决常规横向二极管元件的问题的二极管元件，检测装置等。在常规元件中，半导体界面出现在其表面上的两个电极之间的电流路径中，因此由界面引起的噪声大。二极管元件包括：第一导电型低载流子浓度层（103）; 第一导电型高载流子浓度层（102）; 以及形成在半导体表面上的肖特基电极（104）和欧姆电极（105）。低载体层（103）的载流子浓度低于高载流子层（102）的载流子浓度。二极管元件包括形成在欧姆电极（105）下方的第一导电型杂质引入区（106），并且包括第二导电型杂质导入区（107），以便不与肖特基在肖特基电极（104）和欧姆电极（105）之间的半导体表面上的电极（104）。第二导电型区域（107）与第一导电型区域（106）接触。

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