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1. 发明授权

US07319623B1 Method for isolating a failure site in a wordline in a memory array 有权
标题翻译：隔离存储器阵列中的字线中的故障位置的方法
公开(公告)号：US07319623B1
公开(公告)日：2008-01-15
申请号：US10981026
申请日：2004-11-04
申请人： Caiwen Yuan , Susan Xia Li , Andy Gray
发明人： Caiwen Yuan , Susan Xia Li , Andy Gray
IPC分类号： G11C7/00
CPC分类号： H01L27/1052
摘要： According to one exemplary embodiment, a method for isolating a failure site in a leaky wordline in a memory array includes dividing said leaky wordline into an initial leaky wordline portion and an initial non-leaky wordline portion, where the initial leaky wordline portion has wordline-to-substrate leakage. The initial leaky wordline portion can be determined by using a passive voltage contrast procedure to illuminate the initial leaky wordline portion. The method further includes performing a number of division and identification cycles on the initial leaky wordline portion to determine a final leaky wordline portion. According to this exemplary embodiment, the final leaky wordline portion comprises a predetermined number of memory cells. The method further includes performing a cutting and imaging procedure on the final leaky wordline portion to isolate the failure site.
摘要翻译：根据一个示例性实施例，一种用于隔离存储器阵列中的泄漏字线中的故障位置的方法包括将所述泄漏字线划分为初始泄漏字线部分和初始非泄露字线部分，其中初始泄漏字线部分具有字线 - 到基板泄漏。初始泄漏字线部分可以通过使用被动电压对比程序来确定来照亮初始泄漏字线部分。该方法还包括在初始泄漏字线部分上执行多个分割和识别周期以确定最终的泄漏字线部分。根据该示例性实施例，最终的泄漏字线部分包括预定数量的存储单元。该方法还包括对最终的泄漏字线部分执行切割和成像过程以隔离故障部位。

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