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    • 2. 发明申请
    • LARGE-AREA PIXEL FOR USE IN AN IMAGE SENSOR
    • 用于图像传感器的大面积像素
    • WO2006012761A1
    • 2006-02-09
    • PCT/CH2005/000417
    • 2005-07-18
    • CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SABÜTTGEN, BernhardLUSTENBERGER, FelixSEITZ, Peter
    • BÜTTGEN, BernhardLUSTENBERGER, FelixSEITZ, Peter
    • H01L27/146
    • H01L27/14812H01L27/14603
    • A pixel for detecting incident radiation (In) over a large area with high sensitivity and low power consumption. The pixel comprises a semiconductor substrate (1), covered by a thin insulating layer (2), on top of which a dendritic or arborescent gate structure (3) is arranged. The dendritic gate (3) is electrically connected at two or more contacts (C1, C2) with voltage sources, leading to the flow of a current and a position-dependent potential distribution in the gate (3). Due to the use of arborescent structures and various materials (31, 32), the pixel can be optimized for a certain application, in particular in terms of the electric field distribution, the RC time constant, the power consumption and the spectral sensitivity. Due to its compact size, the photo sensor can be arranged in linear or two-dimensional manner for the realization of line and area sensors.
    • 用于在高灵敏度和低功耗的大面积上检测入射辐射(In)的像素。 像素包括被薄绝缘层(2)覆盖的半导体衬底(1),其上布置有树枝状或碳化的栅极结构(3)。 树枝状栅极(3)在两个或更多个触点(C1,C2)处与电压源电连接,导致栅极(3)中的电流和位置相关电位分布的流动。 由于使用散射结构和各种材料(31,32),像素可以针对特定应用进行优化,特别是在电场分布,RC时间常数,功耗和光谱灵敏度方面。 由于其紧凑的尺寸,光传感器可以以线性或二维方式布置以实现线和面传感器。
    • 3. 发明申请
    • PHOTO SENSOR WITH PINNED PHOTODIODE AND SUB-LINEAR RESPONSE
    • 带有照明光电的照片传感器和子线路响应
    • WO2007115415A1
    • 2007-10-18
    • PCT/CH2007/000093
    • 2007-02-23
    • CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SASEITZ, PeterLUSTENBERGER, Felix
    • SEITZ, PeterLUSTENBERGER, Felix
    • H04N3/15
    • H04N5/35518
    • A photo sensor exhibiting low noise, low smear, low dark current and high dynamic range consists of a pinned (or buried) photodiode (PPD) with associated transfer gate (TG), a reset circuit (3) and a device (SL) with sub-linear voltage-to-current characteristic. The exposure cycle is started by reverse biasing the buried photodiode to its pinning potential and by setting the transfer gate (TG) to a non-zero skimming potential. Photo-generated charge carriers start to fill the buried photodiode; if illumination intensity is high, excessive photocharges are flowing over the transfer gate (TG) to the sensing node. Because of the sub-linear device (SL) connected to the sensing node, the voltage at the sensing node is a sub-linear function of the illumination intensity, and hence the dynamic range of the pixel is increased. The voltage at the sensing node (Se) is read four times, namely before exposure, with the spilled-over photocharge, after reset, and after the photocharge in the buried photodiode has been transferred to the sensing node. This allows correlated multiple sampling techniques to be employed for eliminating reset noise. Because of its compact size, the photo sensor can be employed in one- and two-dimensional image sensors fabricated with industry-standard CMOS or CCD technologies.
    • 具有低噪声,低污迹,低暗电流和高动态范围的光电传感器包括具有相关传输门(TG)的固定(或掩埋)光电二极管(PPD),复位电路(3)和器件(SL) 亚线性电压 - 电流特性。 通过将掩埋光电二极管反向偏置到其钉扎电位并通过将传输栅极(TG)设置为非零撇取电位来开始曝光周期。 光电荷载体开始填充埋地光电二极管; 如果照明强度高,则过多的光电荷在传输门(TG)上流向感测节点。 由于连接到感测节点的子线性器件(SL),感测节点处的电压是照明强度的亚线性函数,因此像素的动态范围增加。 在感测节点(Se)处的电压读取四次,即在曝光之前,溢出光电荷,复位之后,以及在埋入光电二极管中的光电荷已被传送到感测节点之后。 这允许采用相关的多重采样技术来消除复位噪声。 由于其紧凑的尺寸,光电传感器可用于采用工业标准CMOS或CCD技术制造的一维和二维图像传感器。
    • 4. 发明申请
    • HIGHLY SENSITIVE SOLID-STATE IMAGE SENSOR
    • 高灵敏度的固态图像传感器
    • WO2006034599A1
    • 2006-04-06
    • PCT/CH2005/000554
    • 2005-09-26
    • CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SASEITZ, PeterLUSTENBERGER, Felix
    • SEITZ, PeterLUSTENBERGER, Felix
    • H04N3/15
    • H04N5/3575
    • A solid-state image sensor (1) with very high sensitivity approaching the single-photon limit is realized with three modular building blocks: (a) a pixel (2.11, 2.12, …) with a photo-site, intermediate photo-charge storage capability as used for correlated double sampling, and an electronic circuit for signal buffering or amplification, (b) a column or row signal line (3.1) to which a plurality of such pixels (2.11, 2.21, …) is connected using transistor switches, incorporating a low-pass filter (30.1), and (c) a readout circuit (4) to which the row signal lines (3.1, 3.2, …) are connected, consisting of a plurality of analog amplifiers (41.1, 41.2, …) with an analog multiplexer (42). Photo-generated signals are read out and the reset level is subtracted either in the analog or in the digital domain, to implement a correlated-double-sampling method.
    • 具有接近单光子极限的非常高灵敏度的固态图像传感器(1)通过三个模块化构建块实现:(a)具有光电位,中间光电荷存储能力的像素(2.11,2.12) 和用于信号缓冲或放大的电子电路,(b)使用晶体管开关连接多个这样的像素(2.11,2.21)的列或行信号线(3.1) 低通滤波器(30.1)和(c)连接行信号线(3.1,3.2)的读出电路(4),由多个具有模拟多路复用器的模拟放大器(41.1,41.2)组成, (42)。 读出光产生的信号,并在模拟或数字域中减去复位电平,以实现相关双采样方法。