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1. 发明申请

WO2003041168A1 SILICON ON INSULATOR DEVICE WITH IMPROVED HEAT REMOVAL AND METHOD OF MANUFACTURE 审中-公开
标题翻译：具有改进的热去除的绝缘体装置上的硅和制造方法
公开(公告)号：WO2003041168A1
公开(公告)日：2003-05-15
申请号：PCT/US2002/034860
申请日：2002-10-30
申请人： CREE MICROWAVE, INC.
发明人： DARMAWAN, Johan, Agus
IPC分类号： H01L27/01
CPC分类号： H01L29/78603 , H01L23/3677 , H01L2924/0002 , H01L2924/10158 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device is fabricated in a silicon on insulator “SOI” substrate including a supporting silicon substrate (10), a silicon oxide layer supported by the substrate, and a silicon layer overlying the silicon oxide layer. An electrical component is fabricated in the silicon layer over a portion of the silicon oxide layer (12), and then the substrate opposite from the component is masked and etched. A metal layer (20) is then formed in the portion of the substrate which has been removed by etching with the metal layer providing heat removal from the component. In an alternative embodiment, the silicon oxide layer overlying the portion of the substrate is removed with the metal layer abutting the silicon layer. In fabricating the device, preferential etching is employed to remove the silicon in the substrate with the silicon oxide functioning as an etchant stop. A two step process can be employed including a first oxide etch to etch the bulk of the silicon and then a more selective but slower etch. Then, the exposed silicon oxide can then be removed, as in the alternative embodiment, by a preferential etchant of silicon oxide.
摘要翻译：在包括支撑硅衬底10的硅绝缘体“SOI”衬底，由衬底支撑的氧化硅层和覆盖氧化硅层的硅层上制造半导体器件。在氧化硅层12的一部分上的硅层中制造电气部件，然后对与元件相对的基板进行掩模蚀刻。然后在衬底的部分中形成金属层20，该部分已经通过蚀刻除去金属层，从该部件提供热量去除。在替代实施例中，覆盖衬底部分的氧化硅层被去除，金属层邻接硅层。在制造该器件时，采用优先蚀刻来去除衬底中的硅，氧化硅起蚀刻剂停止的作用。可以采用两步法，包括第一氧化物蚀刻来蚀刻大部分硅，然后进行更多选择性但更慢的蚀刻。然后，如在替代实施例中那样，可以通过优选的氧化硅蚀刻剂去除暴露的氧化硅。

2. 发明公开

EP1446836A1 SILICON ON INSULATOR DEVICE WITH IMPROVED HEAT REMOVAL AND METHOD OF MANUFACTURE 审中-公开
标题翻译：硅绝缘体上的组分具有改进的散热和方法
公开(公告)号：EP1446836A1
公开(公告)日：2004-08-18
申请号：EP02778688.8
申请日：2002-10-30
申请人： Cree Microwave, Inc.
发明人： DARMAWAN, Johan, Agus
IPC分类号： H01L27/01
CPC分类号： H01L29/78603 , H01L23/3677 , H01L2924/0002 , H01L2924/10158 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device is fabricated in a silicon on insulator “SOI” substrate including a supporting silicon substrate (10), a silicon oxide layer supported by the substrate, and a silicon layer overlying the silicon oxide layer. An electrical component is fabricated in the silicon layer over a portion of the silicon oxide layer (12), and then the substrate opposite from the component is masked and etched. A metal layer (20) is then formed in the portion of the substrate which has been removed by etching with the metal layer providing heat removal from the component. In an alternative embodiment, the silicon oxide layer overlying the portion of the substrate is removed with the metal layer abutting the silicon layer. In fabricating the device, preferential etching is employed to remove the silicon in the substrate with the silicon oxide functioning as an etchant stop. A two step process can be employed including a first oxide etch to etch the bulk of the silicon and then a more selective but slower etch. Then, the exposed silicon oxide can then be removed, as in the alternative embodiment, by a preferential etchant of silicon oxide.

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