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1. 发明申请

WO2006101598A3 GROUP III NITRIDE FIELD EFFECT TRANSISTORS 审中-公开
公开(公告)号：WO2006101598A3
公开(公告)日：2006-09-28
申请号：PCT/US2006/003259
申请日：2006-01-30
申请人： CREE, INC. , SMITH, Richard, Peter , SHEPPARD, Scott, T. , SAXLER, Adam, William , WU, Yifeng
发明人： SMITH, Richard, Peter , SHEPPARD, Scott, T. , SAXLER, Adam, William , WU, Yifeng
IPC分类号： H01L29/778 , H01L29/20 , H01L29/207 , H01L29/423
摘要： Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (V DS ) of about 56 volts, a gate to source voltage (V gs ) of from about -8 to about -14 volts and a temperature of about 140 °C for at least about 10 hours.

2. 发明申请

WO2006022872A1 NITRIDE-BASED TRANSISTORS HAVING LATERALLY GROWN ACTIVE REGION AND METHODS OF FABRICATING SAME 审中-公开
标题翻译：具有横向生长活性区域的氮化物晶体管及其制造方法
公开(公告)号：WO2006022872A1
公开(公告)日：2006-03-02
申请号：PCT/US2005/010869
申请日：2005-03-30
申请人： CREE, INC. , SAXLER, Adam, William , SHEPPARD, Scott, T. , SMITH, Richard, Peter
发明人： SAXLER, Adam, William , SHEPPARD, Scott, T. , SMITH, Richard, Peter
IPC分类号： H01L29/778 , H01L21/335 , H01L21/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.
摘要翻译：提供了高电子迁移率晶体管和/或制造高电子迁移率晶体管的方法，其包括具有垂直生长区域，横向生长区域和聚结区域的第一III族氮化物层。 III族氮化物沟道层设置在第一III族氮化物层上，III族氮化物阻挡层设置在III族氮化物沟道层上。漏极接触，源极接触和栅极接触设置在阻挡层上。栅极触点设置在第一III族氮化物层的横向生长区域上的阻挡层的一部分上，并且源极接触和/或漏极接触中的一个的至少一部分设置在屏障的一部分上在第一III族氮化物层的垂直生长区上。

3. 发明申请

WO2004008495A2 NITRIDE-BASED TRANSISTORS AND METHODS OF FABRICATION THEREOF USING NON-ETCHED CONTACT RECESSES 审中-公开
标题翻译：基于氮化物的晶体管及其使用非蚀刻接触继电器的制造方法
公开(公告)号：WO2004008495A2
公开(公告)日：2004-01-22
申请号：PCT/US2003/021895
申请日：2003-07-15
申请人： CREE, INC. , SAXLER, Adam, William , SMITH, Richard, Peter , SHEPPARD, Scott, T.
发明人： SAXLER, Adam, William , SMITH, Richard, Peter , SHEPPARD, Scott, T.
IPC分类号： H01L
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/7787
摘要： Contacts for a nitride based transistor and methods of fabricating such contacts provide a recess through a regrowth process. The contacts are formed in the recess. The regrowth process includes fabricating a first cap layer comprising a Group III-nitride semiconductor material. A mask is fabricated and patterned on the first cap layer. The pattern of the mask corresponds to the pattern of the recesses for the contacts. A second cap layer comprising a Group III-nitride semiconductor material is selectively fabricated (e.g. grown) on the first cap layer utilizing the patterned mask. Additional layers may also be formed on the second cap layer. The mask may be removed to provide recess(es) to the first cap layer, and contact(s) may be formed in the recess(es). Alternatively, the mask may comprise a conductive material upon which a contact may be formed, and may not require removal.
摘要翻译：用于氮化物基晶体管的触点和制造这种触点的方法通过再生长工艺提供凹陷。触点形成在凹部中。再生过程包括制造包含III族氮化物半导体材料的第一盖层。在第一盖层上制造和图案化掩模。掩模的图案对应于用于触点的凹部的图案。使用图案化掩模，在第一盖层上选择性地制造（例如，生长）包含III族氮化物半导体材料的第二盖层。另外的层也可以形成在第二盖层上。可以去除掩模以将凹部提供给第一盖层，并且接触可以形成在凹部中。或者，掩模可以包括导电材料，可以在其上形成接触，并且可以不需要去除。

4. 发明申请

WO2006057686A3 CAP LAYERS AND/OR PASSIVATION LAYERS FOR NITRIDE-BASED TRANSISTORS, TRANSISTOR STRUCTURES AND METHODS OF FABRICATING SAME 审中-公开
公开(公告)号：WO2006057686A3
公开(公告)日：2006-06-01
申请号：PCT/US2005/031272
申请日：2005-08-31
申请人： CREE, INC. , SAXLER, Adam, William , SHEPPARD, Scott , SMITH, Richard, Peter
发明人： SAXLER, Adam, William , SHEPPARD, Scott , SMITH, Richard, Peter
IPC分类号： H01L29/778 , H01L21/335 , H01L21/318
摘要： High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.

5. 发明申请

WO2005117129A1 IMPROVED DIELECTRIC PASSIVATION FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：改进用于半导体器件的电介质钝化
公开(公告)号：WO2005117129A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/017059
申请日：2005-05-16
申请人： CREE, INC. , SMITH, Richard, Peter , SHEPPARD, Scott, T. , PALMOUR, John, Williams
发明人： SMITH, Richard, Peter , SHEPPARD, Scott, T. , PALMOUR, John, Williams
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L23/3192 , H01L29/2003 , H01L29/66462 , H01L31/1085 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is disclosed that includes a layer of Group III nitride semiconductor material that includes at least one surface, a control contact on the surface for controlling the electrical response of the semiconductor material, a dielectric barrier layer covering at least a portion of the one surface adjacent the control contact, the dielectric barrier layer having a bandgap greater than the bandgap of the Group III nitride and a conduction band offset from the conduction band of the Group III nitride, and a dielectric protective layer covering the remainder of the Group III nitride surface.
摘要翻译：公开了一种半导体器件，其包括III族氮化物半导体材料层，其包括至少一个表面，用于控制半导体材料的电响应的表面上的控制触点，覆盖该半导体材料的至少一部分的电介质阻挡层表面相邻于控制触点，电介质阻挡层具有大于III族氮化物的带隙的带隙和从III族氮化物的导带偏移的导带，以及覆盖III族氮化物的其余部分的介电保护层表面。

6. 发明申请

WO2007084465A1 METHODS OF FABRICATING TRANSISTORS INCLUDING SUPPORTED GATE ELECTRODES AND RELATED DEVICES 审中-公开
标题翻译：包括支持的电极和相关器件的晶体管的制作方法
公开(公告)号：WO2007084465A1
公开(公告)日：2007-07-26
申请号：PCT/US2007/001045
申请日：2007-01-16
申请人： CREE, INC. , SMITH, Richard, Peter , SHEPPARD, Scott, Thomas , ALLEN, Scott
发明人： SMITH, Richard, Peter , SHEPPARD, Scott, Thomas , ALLEN, Scott
IPC分类号： H01L21/338 , H01L29/423 , H01L29/778 , H01L21/335
CPC分类号： H01L29/42312 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： Transistors are fabricated by forming a protective layer having an opening extending therethrough on a substrate, and forming a gate electrode in the opening. A first portion of the gate electrode laterally extends on surface portions of the protective layer outside the opening, and a second portion of the gate electrode is spaced apart from the protective layer and laterally extends beyond the first portion. Related devices and fabrication methods are also discussed.
摘要翻译：通过在衬底上形成具有贯穿其中的开口的保护层制造晶体管，并在开口中形成栅电极。栅电极的第一部分横向延伸在开口外侧的保护层的表面部分上，栅电极的第二部分与保护层间隔开并横向延伸超过第一部分。还讨论了相关设备和制造方法。

7. 发明申请

WO2007002860A1 PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES 审中-公开
标题翻译：使用无氢溅射氮化物的宽带带隙半导体器件的钝化
公开(公告)号：WO2007002860A1
公开(公告)日：2007-01-04
申请号：PCT/US2006/025447
申请日：2006-06-28
申请人： CREE, INC. , RING, Zoltan , HAGLEITNER, Helmut , HENNING, Jason, Patrick , MACKENZIE, Andrew , ALLEN, Scott, T. , SHEPPARD, Scott, Thomas , SMITH, Richard, Peter , SRIRAM, Saptharishi , WARD, Allan, III
发明人： RING, Zoltan , HAGLEITNER, Helmut , HENNING, Jason, Patrick , MACKENZIE, Andrew , ALLEN, Scott, T. , SHEPPARD, Scott, Thomas , SMITH, Richard, Peter , SRIRAM, Saptharishi , WARD, Allan, III
IPC分类号： H01L21/314 , H01L21/318
CPC分类号： H01L21/045 , H01L21/3145 , H01L21/318 , H01L21/3185 , H01L29/1608 , H01L29/2003 , H01L29/24
摘要： A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.
摘要翻译：公开了钝化半导体结构及其相关方法。该结构包括碳化硅衬底或层; 在碳化硅衬底上的氧化层，用于降低碳化硅衬底和热氧化层之间的界面密度; 在热氧化层上的第一溅射的非化学计量的氮化硅层，用于减少寄生电容并最小化器件捕获; 在所述第一层上的第二溅射的非化学计量的氮化硅层，用于使所述衬底进一步从所述衬底定位以后的钝化层而不封装所述结构; 在第二溅射层上的溅射化学计量的氮化硅层，用于封装该结构并增强钝化层的氢阻挡性能; 以及用于化学计量氮化硅的化学气相沉积环境阻挡层，用于在封装层上进行步骤覆盖和防裂。

8. 发明申请

WO2003007383A3 ALGAN/GAN HEMTS HAVING A GATE CONTACT ON A GAN BASED CAP SEGMENT AND METHODS OF FABRICATING SAME 审中-公开
公开(公告)号：WO2003007383A3
公开(公告)日：2003-01-23
申请号：PCT/US2002/009398
申请日：2002-03-26
申请人： CREE, INC.
发明人： SMITH, Richard, Peter
IPC分类号： H01L29/778
摘要： High electron mobility transistors (HEMTs) and methods of fabricating HEMTs are provided Devices according to embodiments of the present invention include a gallium nitride (GaN) channel layer and an aluminum gallium nitride (AlGaN) barrier layer on the channel layer. A first ohmic contact is provided on the barrier layer (16) to provide a source electrode (18) and a second ohmic contact is also provided on the barrier layer (16) and is spaced apart from the source electrode (18) to provide a drain electrode (20). A GaN-based cap segment (30) is provided on the barrier layer (16) between the source electrode (18) and the drain electrode (20). The GaN-based cap segment (30) has a first sidewall (31) adjacent and spaced apart from the source electrode (18) and may have a second sidewall (32) adjacent and spaced apart from the drain electrode (20). A non-ohmic contact is provided on the GaN-based cap segment (30) to provide a gate contact (22). The gate contact (22) has a first sidewall (27) which is substantially aligned with the first sidewall (31) of the GaN-based cap segment (30). The gate contact (22) extends only a portion of a distance between the first sidewall (31) and the second sidewall (32) of the GaN-based cap segment (30).

9. 发明授权

EP1817798B2 CAP LAYERS AND/OR PASSIVATION LAYERS FOR NITRIDE-BASED TRANSISTORS, TRANSISTOR STRUCTURES AND METHODS OF FABRICATING SAME 有权
公开(公告)号：EP1817798B2
公开(公告)日：2020-04-22
申请号：EP05797731.6
申请日：2005-08-31
申请人： Cree, Inc.
发明人： SAXLER, Adam, William , SHEPPARD, Scott , SMITH, Richard, Peter
IPC分类号： H01L29/778 , H01L21/335 , H01L21/318

10. 发明授权

EP1897128B1 PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES 有权
公开(公告)号：EP1897128B1
公开(公告)日：2019-11-20
申请号：EP06785888.6
申请日：2006-06-28
申请人： Cree, Inc.
发明人： RING, Zoltan , HAGLEITNER, Helmut , HENNING, Jason, Patrick , MACKENZIE, Andrew , ALLEN, Scott, T. , SHEPPARD, Scott, Thomas , SMITH, Richard, Peter , SRIRAM, Saptharishi , WARD, Allan, III
IPC分类号： H01L21/314 , H01L21/318 , H01L29/24

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