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1. 发明申请

WO2008112064A2 LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES AND METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 审中-公开
标题翻译：具有电流减少结构的发光装置和形成具有减少电流结构的发光装置的方法
公开(公告)号：WO2008112064A2
公开(公告)日：2008-09-18
申请号：PCT/US2008/002140
申请日：2008-02-19
申请人： CREE, INC. , EMERSON, David Todd , HABERERN, Kevin , BERGMANN, Michael John , SLATER, David , DONOFRIO, Matthew , EDMOND, John
发明人： EMERSON, David Todd , HABERERN, Kevin , BERGMANN, Michael John , SLATER, David , DONOFRIO, Matthew , EDMOND, John
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译：发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域或n型半导体层并且与非透明特征对准。导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域地区。

2. 发明申请

WO2006130392A1 DEEP ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATING DEEP ULTRAVIOLET LIGHT EMITTING DEVICES 审中-公开
标题翻译：深层超紫外线发光装置和制造深层超紫外线发光装置的方法
公开(公告)号：WO2006130392A1
公开(公告)日：2006-12-07
申请号：PCT/US2006/019951
申请日：2006-05-23
申请人： CREE, INC. , EMERSON, David Todd , BERGMANN, Michael John , ABARE, Amber , HABERERN, Kevin
发明人： EMERSON, David Todd , BERGMANN, Michael John , ABARE, Amber , HABERERN, Kevin
IPC分类号： H01L33/00 , H01S5/343
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least 4 % are provided. Wall plug efficiencies may be at least 5 % or at least 6 %. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least 2 % are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least 0.4 % are provided. Light emitting devices and method of fabricating light emitting devices having a peak output wavelength of not greater than 350 nm and an output power of at least 5 mW, having a peak outpu wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
摘要翻译：提供发光器件和制造发射波长小于360nm并具有至少4％的插塞效率的发光器件的方法。墙壁插头效率可以至少为5％或至少为6％。还提供了发光器件和制造发射器件的方法，其发射波长小于345nm，壁插头效率至少为2％。提供了发射波长小于330nm，壁塞效率至少为0.4％的发光器件的发光器件和方法。发光器件和制造具有不大于350nm的峰值输出波长和至少5mW的输出功率的发光器件的方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率还提供了在小于约0.35μA/μm2的电流密度下的330nm或更小的峰值输出波长和至少0.3mW的输出功率。半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。

3. 发明申请

WO2011044412A1 MULTI-ROTATION EPITAXIAL GROWTH APPARATUS AND REACTORS INCORPORATING SAME 审中-公开
标题翻译：多元化外延生长装置和反应器
公开(公告)号：WO2011044412A1
公开(公告)日：2011-04-14
申请号：PCT/US2010/051905
申请日：2010-10-08
申请人： CREE, INC. , BERGMANN, Michael John , EMERSON, David Todd , SEIBEL, David Dean
发明人： BERGMANN, Michael John , EMERSON, David Todd , SEIBEL, David Dean
IPC分类号： C30B25/12 , C30B25/02 , C23C16/458
CPC分类号： C23C16/4584 , C30B25/12 , H01L21/68764 , H01L21/68771
摘要： A susceptor apparatus for use in a CVD reactor includes a main platter with a central gear. The main platter has opposite first and second sides, a central recess formed in the second side, and a plurality of circumferentially spaced-apart pockets formed in the first side. The central gear is positioned within the central recess and the satellite platters are individually rotatable within the respective pockets. Each pocket has a peripheral wall with an opening in communication with the central recess. The central gear teeth extend into each of the pockets via the respective wall openings and engage a planet gear associated with each satellite platter. Rotation of the main platter about its rotational axis causes the satellite platters to rotate about their individual rotational axes.
摘要翻译：用于CVD反应器的感受器装置包括具有中心齿轮的主盘片。主盘具有相对的第一和第二侧面，形成在第二侧面的中心凹部和形成在第一侧中的多个周向间隔开的凹部。中央齿轮定位在中央凹部内，并且卫星盘可在相应的凹穴内单独旋转。每个口袋都具有一个具有与中心凹部连通的开口的周壁。中央齿轮齿通过相应的壁开口延伸到每个凹穴中，并与每个卫星盘相关联的行星齿轮啮合。主盘绕其旋转轴的旋转导致卫星盘绕其各自的旋转轴线旋转。

4. 发明申请

WO2006118623A1 LIGHT EMITTING DEVICES WITH ACTIVE LAYERS THAT EXTEND INTO OPENED PITS 审中-公开
标题翻译：具有活动层的发光装置，延伸到开放的胶片中
公开(公告)号：WO2006118623A1
公开(公告)日：2006-11-09
申请号：PCT/US2006/002579
申请日：2006-01-24
申请人： CREE, INC. , EMERSON, David Todd , BERGMANN, Michael John
发明人： EMERSON, David Todd , BERGMANN, Michael John
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/007 , H01L33/32
摘要： Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the plurality of layers of the active region to extend into the pits. In some embodiments, the active region comprises a plurality of quantum wells. The pit opening region may comprise a superlattice structure. The pits may surround their corresponding dislocations and the plurality of layers may extend to the respective dislocations. At least one of the pits of the plurality of pits may originate in a layer disposed between the pit opening layer and a substrate on which the pit opening layer is provided. The active region may be a Group III nitride based active region. Methods of fabricating such devices are also provided.
摘要翻译：发光器件包括包括多个层的有源区和设置有源区的凹坑开口区。凹坑开口区域被配置为将多个凹坑的开口的尺寸扩大到足以使有源区域的多个层延伸到凹坑中的尺寸。在一些实施例中，有源区包括多个量子阱。凹坑开口区域可以包括超晶格结构。凹坑可以围绕其相应的位错，并且多个层可以延伸到相应的位错。多个凹坑中的凹坑中的至少一个可以起源于设置在凹坑开口层和设置凹坑开口层的基底之间的层。有源区可以是基于III族氮化物的有源区。还提供了制造这种装置的方法。

5. 发明申请

WO2006023060A3 GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE 审中-公开
公开(公告)号：WO2006023060A3
公开(公告)日：2006-03-02
申请号：PCT/US2005/022597
申请日：2005-06-24
申请人： CREE, INC. , BERGMANN, Michael John , EMERSON, David Todd
发明人： BERGMANN, Michael John , EMERSON, David Todd
IPC分类号： H01L33/00
摘要： Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

6. 发明申请

WO2012099791A3 LIGHT EMITTING DIODES WITH LOW JUNCTION TEMPERATURE 审中-公开
公开(公告)号：WO2012099791A3
公开(公告)日：2012-07-26
申请号：PCT/US2012/021253
申请日：2012-01-13
申请人： CREE, INC. , BERGMANN, Michael John , WILLIAMS, Christopher D. , SCHNEIDER, Kevin Shawne , HABERERN, Kevin , DONOFRIO, Matthew
发明人： BERGMANN, Michael John , WILLIAMS, Christopher D. , SCHNEIDER, Kevin Shawne , HABERERN, Kevin , DONOFRIO, Matthew
IPC分类号： H01L33/00
摘要： A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.

7. 发明申请

WO2010144252A2 FRONT END SCRIBING OF LIGHT EMITTING DIODE (LED) WAFERS AND RESULTING DEVICES 审中-公开
标题翻译：发光二极管（LED）波形和结果设备的前端切割
公开(公告)号：WO2010144252A2
公开(公告)日：2010-12-16
申请号：PCT/US2010/036101
申请日：2010-05-26
申请人： CREE, INC. , DONOFRIO, Matthew , PARKER, Winston T. , BERGMANN, Michael John , GILMORE, Steven Scott , NORMAN, Jay Thomas , SCHNEIDER, Kevin Shawne
发明人： DONOFRIO, Matthew , PARKER, Winston T. , BERGMANN, Michael John , GILMORE, Steven Scott , NORMAN, Jay Thomas , SCHNEIDER, Kevin Shawne
IPC分类号： H01L33/00 , H01L21/78
CPC分类号： H01L33/0095 , H01L33/0079 , H01L33/22
摘要： A wafer of light emitting diodes (LEDs) is laser scribed to produce a laser scribing cut. Then, the wafer is cleaned, for example by wet etching, to reduce scribe damage. Then, electrical contact layers for the LEDs are formed on the wafer that has been cleaned. Alternatively, the scribing cut may be produced by multiple etches before contact formation. Related LEDs are also described.
摘要翻译：激光刻印发光二极管（LED）晶片以产生激光划线切割。然后，例如通过湿式蚀刻来清洁晶片，以减少刻划损伤。然后，在已经清洁的晶片上形成用于LED的电接触层。或者，划线切割可以在接触形成之前由多次蚀刻产生。还描述了相关的LED。

8. 发明申请

WO2012115860A1 SOLID STATE LIGHT EMITTING DEVICES INCLUDING NONHOMOGENEOUS LUMINOPHORIC PARTICLE SIZE LAYERS 审中-公开
标题翻译：固体发光装置，包括非均质的荧光颗粒尺寸层
公开(公告)号：WO2012115860A1
公开(公告)日：2012-08-30
申请号：PCT/US2012/025534
申请日：2012-02-17
申请人： CREE, INC. , CABALU, Jasper , BERGMANN, Michael John
发明人： CABALU, Jasper , BERGMANN, Michael John
IPC分类号： H01L31/00
CPC分类号： H01J1/63 , H01J1/68 , H01L33/504
摘要： A light emitting device includes an LED and a layer of luminophoric particles, such as phosphor, that are non-homogeneous in size as a function of distance away from the LED. For example, a first layer of relatively large size phosphor particles may be provided between a second layer of relatively small size phosphor particles and the LED. The large particles can provide high brightness and the small particles can reduce angular color temperature variation in emitted light.
摘要翻译：发光器件包括LED和诸如磷光体的发光体颗粒层，其尺寸不同于离开LED的距离的函数。例如，可以在第二层相对较小尺寸的荧光体颗粒和LED之间提供第一层较大尺寸的荧光体颗粒。大颗粒可以提供高亮度，并且小颗粒可以减少发射光中的角色温度变化。

9. 发明申请

WO2011097150A1 GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH MULTIPLE QUANTUM WELL STRUCTURES HAVING VARYING WELL THICKNESSES 审中-公开
标题翻译：第III类基于氮化物的发光二极管结构，具有多个量子阱结构，具有变化良好的厚度
公开(公告)号：WO2011097150A1
公开(公告)日：2011-08-11
申请号：PCT/US2011/023114
申请日：2011-01-31
申请人： CREE, INC. , BERGMANN, Michael John , DRISCOLL, Daniel Carleton , CHAVAN, Ashonita , CANTU-ALEJANDRO, Pablo , IBBETSON, James
发明人： BERGMANN, Michael John , DRISCOLL, Daniel Carleton , CHAVAN, Ashonita , CANTU-ALEJANDRO, Pablo , IBBETSON, James
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/007 , H01L33/06 , H01L33/32
摘要： A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.
摘要翻译： III族氮化物类发光二极管包括p型III族氮化物基半导体层，与p型III族氮化物基半导体层形成PN结的n型III族氮化物基半导体层，以及一组在n型III族氮化物基半导体层上的III族氮化物基有源区。有源区包括多个依次层叠的III族氮化物基阱，包括相应的阱层。多个阱层包括具有第一厚度的第一阱层和具有第二厚度的第二阱层。第二阱层位于P-N结与第一阱层之间，第二厚度大于第一厚度。

10. 发明授权

EP2532033B1 GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH MULTIPLE QUANTUM WELL STRUCTURES HAVING VARYING WELL THICKNESSES 有权转让
标题翻译：具有多种量子阱结构的III族氮化物基发光二极管结构具有各种各样的厚度
公开(公告)号：EP2532033B1
公开(公告)日：2017-08-23
申请号：EP11740222.2
申请日：2011-01-31
申请人： Cree, Inc.
发明人： BERGMANN, Michael John , DRISCOLL, Daniel Carleton , CHAVAN, Ashonita , CANTU-ALEJANDRO, Pablo , IBBETSON, James
IPC分类号： H01L33/04 , H01L33/32 , H01L33/06 , H01L33/00
CPC分类号： H01L33/04 , H01L33/007 , H01L33/06 , H01L33/32

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