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    • 1. 发明申请
    • DETECTION AND MAKING OF ULTRALOW LEAD CONTAMINATED UV OPTICAL FLUORIDE CRYSTALS FOR < 200 NM LITHOGRAPHY
    • 超导铅污染的紫外光学氟化物晶体的检测和制作<200NM光刻
    • WO2004015453A2
    • 2004-02-19
    • PCT/US2003/022975
    • 2003-07-24
    • CORNING INCORPORATED
    • MAYOLET, Alexandre, MichelTIMOFEEV, Nikolay T.
    • G02B
    • G01N21/64
    • The invention provides a method of detecting sub-ppm lead impurity levels in a below 200 nm transmitting optical calcium fluoride crystal. The method includes providing a below 200 nm wavelength transmitting optical calcium fluoride crystal , providing a fluorescence spectrometer having a light source for producing a 200 to 210 nm selectable wavelength incident radiation and a detector for detecting excited luminescence light in the wavelength range of 210-260 nm produced by the incident radiation, exciting a first luminescence area of the crystal with the 200 to 210 nm selectable wavelength incident radiation and detecting with the detector excited 210 to 260 luminescence light produced from the crystal luminescence area by the 200 to 210 incident radiation to provide a lead ppb impurity level measurement less than 100 ppb. The invention provides for improved manufacturing of below 200 nm wavelength optical elements and optical fluoride crystals such as ultralow lead contaminated calcium fluoride.
    • 本发明提供了在200nm以下的透射光学氟化钙晶体中检测亚ppm铅杂质水平的方法。 该方法包括提供低于200nm的波长透射光学氟化钙晶体,提供具有用于产生200至210nm可选波长入射辐射的光源的荧光光谱仪和用于检测在210-260的波长范围内的激发的发光的检测器 nm,通过入射辐射产生的激光晶体的第一发光区域,以200〜210nm可选波长的入射辐射激发,并用探测器激发210〜260个由晶体发光区域产生的发光,通过200〜210次入射辐射, 提供低于100ppb的铅ppb杂质水平测量。 本发明提供了低于200nm波长的光学元件和氟化物晶体的改进制造,例如超低铅污染的氟化钙。