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    • 2. 发明申请
    • ROTARY SPEED SENSOR
    • 旋转速率传感器
    • WO2008128728A8
    • 2010-01-28
    • PCT/EP2008003153
    • 2008-04-18
    • EADS DEUTSCHLAND GMBHCONTI TEMIC MICROELECTRONICROSE MATTHIASAIKELE MATTHIASBAUER KARINSEIDEL HELMUT
    • ROSE MATTHIASAIKELE MATTHIASBAUER KARINSEIDEL HELMUT
    • G01C19/56
    • G01C19/5621
    • The invention relates to a rotary speed sensor (100) comprising a tuning fork-shaped oscillator (30) having a first electrically conductive prong (11 a) and a second electrically conductive prong (11 b) located at a distance therefrom, wherein the first prong (11 a) and the second prong (11 b) are connected to each other via a base (12). The rotary speed sensor (100) further comprises a web (21) connecting the base (12) to an electrically conductive substrate (1), and a readout device (20) for detecting vibrations of the oscillator (30), wherein the oscillator (30) has a uniform potential and is electrically insulated from one or more excitation electrodes (14) arranged adjacent to the prongs (11 a, 11 b), in order to allow electrostatic excitation between the prongs (11 a, 11 b) and the excitation electrodes (14). The rotary speed sensor has a simple design and is simple to control and read.
    • 偏航率传感器(100)包括的音叉振荡器(30),具有第一导电插脚(11)和布置在所述第二导电插脚(11 B),其中所述第一齿(11)和所述第二叉头(距离 经由基座12)图11(b)被连接在一起。 此外,旋转速度传感器(100)包括一个腹板(21),该基部(12)与用于检测所述振荡器(30)的振荡的导电基片(1),读出单元(20)连接,所述振荡器(30) 具有均匀的电势和一个或多个相邻的尖头(11,11B),其设置激励电极(14)电绝缘,所述尖齿之间的静电激励(11 A,11 b)和激励电极(14),以 允许。 旋转率传感器构造简单,以驱动和读取。
    • 3. 发明申请
    • METHOD FOR PRODUCING INSULATION STRUCTURES
    • 制造绝缘结构的方法
    • WO2004026759A3
    • 2004-12-23
    • PCT/DE0303049
    • 2003-09-12
    • CONTI TEMIC MICROELECTRONICAIKELE MATTHIASENGELHARDT ALBERTFREY MARCUSHARTMANN BERNHARDSEIDEL HELMUT
    • AIKELE MATTHIASENGELHARDT ALBERTFREY MARCUSHARTMANN BERNHARDSEIDEL HELMUT
    • B81C1/00
    • B81C1/00698B81B2201/0235B81B2203/033B81C2201/0178
    • The invention relates to methods for producing insulation structures for micromechanical sensors according to a monocrystalline surface technique. According to known methods, silicon structures defined by deep trenches are etched and the lower side thereof facing the substrate is exposed by a release etch step. The filling of said trenches with a dielectrically insulating material, such as silicon dioxide, enables the silicon structure to be solidly clutched on three sides. The invention is based on the fact that instead of filling trenches, thin-walled silicon is converted into an electrically non-conductive material. This can be carried out, for example, by means of thermal oxidation of narrow silicon sections previously exposed by trenches. In a minimal configuration, two trenches (holes) must be etched per section with the desired structural depth. The interlying silicon section must be narrow enough to be able to be fully thermally oxidised.
    • 本发明涉及用于制造单晶表面技术中的微机械传感器的绝缘结构的方法。 在已知的方法中,由深沟槽沟槽限定的硅结构通过释放 - 蚀刻步骤被蚀刻并且在其底侧上暴露于衬底。 随后,用诸如二氧化硅的介电绝缘材料填充这些沟槽,导致通过三面单侧开口Umklammerung牢固地锚固具有填充沟槽的硅结构。 本发明的基本思想是将薄壁硅转变成不导电材料而不是填入沟槽中。 这可以例如通过先前由沟槽暴露的窄硅网的热氧化来实现。 在最小配置中,每个条纹的两个沟槽(孔)必须用所需的纹理深度进行蚀刻。 插入的硅棒必须足够窄,才能被热完全氧化。