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1. 发明申请

WO2008038863A1 NOVEL ORGANOSILANE POLYMER, HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM COMPRISING THE ORGANOSILANE POLYMER, AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION 审中-公开
标题翻译：新型有机硅聚合物，用于包含有机硅聚合物的耐下胶膜的HARDMASK组合物，以及使用HARDMASK组合物生产半导体集成电路装置的方法
公开(公告)号：WO2008038863A1
公开(公告)日：2008-04-03
申请号：PCT/KR2006/005915
申请日：2006-12-31
申请人： CHEIL INDUSTRIES INC. , YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , OH, Chang Il
发明人： YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , OH, Chang Il
IPC分类号： G03F7/004
CPC分类号： G03F7/11 , C08G77/04 , G03F7/0752 , G03F7/091
摘要： A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises: (a) an organosilane polymer prepared by reacting polycondensation products of hydrolysates of compounds represented by Formulae 1, 2 and 3: [RO] 3 Si-Ar (1) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group), [RO] 3 Si-H (2) (wherein R is methyl or ethyl), and [RO] 3 Si-R' (3) (wherein R is methyl or ethyl and R'is substituted or unsubstituted cyclic or acyclic alkyl) with ethyl vinyl ether of Formula 4: CH 2 CHOCH 2 CH 3 (4) in the presence of an acid catalyst; (b) a solvent; and (c) a crosslinking catalyst.
摘要翻译：提供了用于加工抗蚀剂下层膜的硬掩模组合物。硬掩模组合物包括：（a）通过使由式1,2和3表示的化合物的水解产物的缩聚产物：[RO 3] Si-Ar（1）（其中R是甲基或乙基，Ar是含芳环的官能团），[RO 3] Si-H（2）（其中R是甲基或乙基）和[RO 3] （3）（其中R是甲基或乙基，R 1是取代或未取代的环状或非环状烷基）与式4的乙基乙烯基醚：CH 2 CH 2 2（3）在酸催化剂存在下，（b）溶剂; 和（c）交联催化剂。

2. 发明申请

WO2007139268A1 ANTIREFLECTIVE HARDMASK COMPOSITION 审中-公开
标题翻译：抗反射组合物
公开(公告)号：WO2007139268A1
公开(公告)日：2007-12-06
申请号：PCT/KR2006/005906
申请日：2006-12-29
申请人： CHEIL INDUSTRIES INC. , YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , LEE, Jin Kuk , OH, Chang Il , KIM, Min Soo , HYUNG, Kyung Hee , NAM, Irina
发明人： YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , LEE, Jin Kuk , OH, Chang Il , KIM, Min Soo , HYUNG, Kyung Hee , NAM, Irina
IPC分类号： G03F7/004
CPC分类号： G03F7/091
摘要： Disclosed is a hardmask composition having antireflective properties useful for a lithographic process. The hardmask composition provides excellent optical properties, superior mechanical properties and high etch selectivity. In addition, the hardmask composition can be easily applied by a spin-on coating technique. Advantageously, the hardmask composition is suitable for a short- wavelength lithographic process and has a minimum residual acid content.
摘要翻译：公开了具有抗平滑印刷工艺有用的抗反射性能的硬掩模组合物。硬掩模组合物提供优异的光学性能，优异的机械性能和高蚀刻选择性。此外，硬掩模组合物可以通过旋涂技术容易地应用。有利地，硬掩模组合物适用于短波长光刻工艺，并具有最小的残留酸含量。

3. 发明申请

WO2007105859A1 ORGANOSILANE POLYMERS, HARDMASK COMPOSITIONS INCLUDING THE SAME AND METHODS OF PRODUCING SEMICONDUCTOR DEVICES USING ORGANOSILANE HARDMASK COMPOSITIONS 审中-公开
标题翻译：有机聚合物，包括它们的HARDMASK组合物和使用有机硅复合材料制备半导体器件的方法
公开(公告)号：WO2007105859A1
公开(公告)日：2007-09-20
申请号：PCT/KR2007/000003
申请日：2007-01-15
申请人： CHEIL INDUSTRIES INC. , YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , LEE, Jin Kuk , OH, Chang Il , KIM, Min Soo , YOON, Kyong Ho , NAM, Irina
发明人： YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , LEE, Jin Kuk , OH, Chang Il , KIM, Min Soo , YOON, Kyong Ho , NAM, Irina
IPC分类号： C08G77/00 , C08G77/02 , C08G77/08 , C08G77/06
CPC分类号： H01L21/31144 , C08G77/20 , G03F7/0752 , G03F7/091 , H01L21/3121
摘要： Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including (a) at least one compound of Formula (I) Si(OR 1 )(OR 2 )(OR 3 )R 4 wherein R 1 , R 2 and R 3 may each independently be an alkyl group, and R 4 may be -(CH 2 ) n R 5 , wherein R 5 may be an aryl or a substituted aryl, and n may be O or a positive integer; and (b) at least one compound of Formula (II) Si(OR 6 )(OR 7 )(OR 8 )R 9 wherein R 6 , R 7 and R 8 may each independently an alkyl group or an aryl group; and R 9 may be an alkyl group. Also provided are hardmask compositions including an organosilane compound according to an embodiment of the invention, or a hydrolysis product thereof. Methods of producing semiconductor devices using a hardmask compostion according to an embodiment of the invention, and semiconductor devices produced therefrom, are also provided.
摘要翻译：根据本发明的一些实施方案，提供了通过使有机硅烷化合物反应制备的有机硅烷聚合物，所述有机硅烷化合物包括（a）至少一种式（I）Si（OR 1）2（OR 2）（OR 3）R 4其中R 1，R 2和R 2， R 3可以各自独立地为烷基，R 4可以是 - （CH 2）n R 5 其中R 5可以是芳基或取代的芳基，n可以是O或正整数; 和（b）至少一种式（II）的化合物Si（OR 6）（OR 7）（OR 8）（OR 8）其中R 6，R 7和R 8可各自独立地为烷基或芳基; R 9可以是烷基。还提供了包含根据本发明实施方案的有机硅烷化合物或其水解产物的硬掩模组合物。还提供了使用根据本发明的实施例的硬掩模组合的半导体器件的制造方法以及由其制造的半导体器件。

4. 发明申请

WO2008018664A1 HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开
标题翻译：用于电阻膜的HARDMASK组合物和使用其制造半导体集成电路装置的方法
公开(公告)号：WO2008018664A1
公开(公告)日：2008-02-14
申请号：PCT/KR2006/005916
申请日：2006-12-31
申请人： CHEIL INDUSTRIES INC. , YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , KIM, Mi Young , KOH, Sang Ran , UH, Dong Sun , KIM, Jong Seob , KIM, Do Hyun
发明人： YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , KIM, Mi Young , KOH, Sang Ran , UH, Dong Sun , KIM, Jong Seob , KIM, Do Hyun
IPC分类号： H01L21/027
CPC分类号： H01L21/31144 , C08G77/04 , C09D183/04 , H01L21/0276
摘要： Disclosed is a hardmask composition for processing a resist underlayer film. The hardmask composition comprises: (a) an organosilane polymer having alkoxy groups prepared from a compound represented by [RO] 3 Si-R' (1) (wherein R is methyl or ethyl and R' is substituted or unsubstituted cyclic or acyclic alkyl), or an organosilane polymer having alkoxy groups prepared from the compound of Formula 1 and a compound represented by [RO] 3 Si-Ar (2) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group); and (b) a solvent. The hardmask composition has excellent film characteristics. In addition, the hardmask composition exhibits excellent hardmask characteristics, thus allowing a good pattern to be effectively transferred to a material layer. Particularly, the hardmask composition is highly stable during storage. Further disclosed is a method for producing a semiconductor integrated circuit device using the hardmask composition.
摘要翻译：公开了用于加工抗蚀剂下层膜的硬掩模组合物。硬掩模组合物包括：（a）由由[RO] 3 Si-R'（1）表示的化合物制备的具有烷氧基的有机硅烷聚合物（其中R是甲基或乙基，R'被取代或未取代的环状或非环状烷基）或具有由式1化合物制备的烷氧基的有机硅烷聚合物和由[RO] 3 Si-Ar（2）表示的化合物（其中R是甲基或乙基和Ar是含芳环的官能团）; 和（b）溶剂。硬掩模组合物具有优异的膜特性。此外，硬掩模组合物表现出优异的硬掩模特性，因此允许将良好的图案有效地转移到材料层。特别地，硬掩模组合物在储存期间高度稳定。另外公开了使用该硬掩模组合物制造半导体集成电路器件的方法。

5. 发明申请

WO2008063016A1 HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS 审中-公开
标题翻译：用于加工电阻膜的HARDMASK组合物，使用HARDMASK组合物生产半导体集成电路器件的方法以及由该工艺生产的半导体集成电路器件
公开(公告)号：WO2008063016A1
公开(公告)日：2008-05-29
申请号：PCT/KR2007/005894
申请日：2007-11-21
申请人： CHEIL INDUSTRIES INC. , KIM, Mi Young , KIM, Sang Kyun , LIM, Sang Hak , KOH, Sang Ran , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
发明人： KIM, Mi Young , KIM, Sang Kyun , LIM, Sang Hak , KOH, Sang Ran , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
IPC分类号： G03F7/004
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122
摘要： A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises an organosilane polymer and a solvent or a mixture of solvents wherein the organosilane polymer is prepared in the presence of an acid catalyst by polycondensation of hjdroly sates of compounds represented by Formulae 1, 2 and 3: ([R)1O]3S-X (1) wherein X is a C6-C30 functional group containing at least one substituted or unsubstituted aromatic ring and R1 is a C1-C6 alkyl group; [R2O]3S-R 3 (2) wherein R2 is a C1-C6 alkyl group and R3 is a C1-C12 alkyl group; and [R4O]3S-Y-S[OR 5]3 (3) wherein R4 and R5 are each independently a C1-C6 alkyl group, and Y is a linking group selected from the group consisting of aromatic rings, substituted or unsubstituted, linear or branched C1-C20 alkylene groups, C1-C20 alkylene groups containing an aromatic ring, a heterocyclic ring, an urea group or an isocyanurate group in the backbone and C2-C20 hydrocarbon groups containing at least one multiple bond. The hardmask composition exhibits excellent film characteristics and good storage stability and allows transferring a good pattern to a material layer due to its satisfactory hardmask characteristics. In addition, the hardmask composition has improved etch resistance against O 2 plasma gas upon subsequent etching for patterning. The hardmask composition can be used to form a highly hjdrophilic thin film, thus being effective in improving the interfacial compatibility of the thin film with an overlying antireflective coating. Further provided is a process for producing a semiconductor integrated circuit device using the hardmask composition.
摘要翻译：提供了用于加工抗蚀剂下层膜的硬掩模组合物。所述硬掩模组合物包含有机硅烷聚合物和溶剂或溶剂混合物，其中有机硅烷聚合物是在酸催化剂存在下通过由式1,2和3表示的化合物的共聚物缩聚制备的：（[R] 10] 3S-X（1）其中X是含有至少一个取代或未取代的芳环的C 6 -C 30官能团，R 1是C 1 -C 6烷基; [R2O] 3S-R 3（2）其中R2是C1-C6烷基，R3是C1-C12烷基; 和[R 40] 3S-YS [OR 5] 3（3）其中R 4和R 5各自独立地为C 1 -C 6烷基，Y为选自以下的连接基团：芳环，取代或未取代的直链或支链C1-C20亚烷基，含有芳香环，杂环，脲基或异氰脲酸酯基的C1-C20亚烷基和含有至少一个多重键的C 2 -C 20烃基。硬掩模组合物表现出优异的膜特性和良好的储存稳定性，并且由于其令人满意的硬掩模特性，可以将良好的图案转印到材料层。此外，随后的图案化蚀刻，硬掩模组合物具有改善的对O 2等离子体气体的耐蚀刻性。硬掩模组合物可以用于形成高亲水性薄膜，因此有效地改善薄膜与上覆抗反射涂层的界面相容性。还提供了使用硬掩模组合物制造半导体集成电路器件的方法。

6. 发明申请

WO2010071255A1 HARDMASK COMPOSITION WITH IMPROVED STORAGE STABILITY FOR FORMING RESIST UNDERLAYER FILM 审中-公开
标题翻译：具有改进的存储稳定性的HARDMASK组合物形成电阻膜
公开(公告)号：WO2010071255A1
公开(公告)日：2010-06-24
申请号：PCT/KR2008/007895
申请日：2008-12-31
申请人： CHEIL INDUSTRIES INC. , KOH, Sang Ran , KIM, Sang Kyun , LIM, Sang Hak , KIM, Mi Young , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
发明人： KOH, Sang Ran , KIM, Sang Kyun , LIM, Sang Hak , KIM, Mi Young , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
IPC分类号： G03F7/075
CPC分类号： G03F7/0752 , C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
摘要： Disclosed is a hardmask composition for forming a resist underlayer film. The hardmask composition comprises (A) an organosilane polymer and (B) at least one stabilizer. The hardmask composition is very stable during storage and allows a good pattern to be transferred to a material layer due to its excellent hardmask properties.
摘要翻译：公开了用于形成抗蚀剂下层膜的硬掩模组合物。硬掩模组合物包含（A）有机硅烷聚合物和（B）至少一种稳定剂。硬掩模组合物在储存期间非常稳定，并且由于其优异的硬掩模性质而允许将良好的图案转移到材料层。

7. 发明公开

EP2004726A1 ORGANOSILANE POLYMERS, HARDMASK COMPOSITIONS INCLUDING THE SAME AND METHODS OF PRODUCING SEMICONDUCTOR DEVICES USING ORGANOSILANE HARDMASK COMPOSITIONS 审中-公开
标题翻译： ORGANOSILANPOLYMERE，含硅的硬掩模组合物及其制造方法半导体器件使用有机硅烷HART MASK组合物
公开(公告)号：EP2004726A1
公开(公告)日：2008-12-24
申请号：EP07700795.3
申请日：2007-01-15
申请人： Cheil Industries Inc.
发明人： YOON, Hui Chan , KIM, Sang Kyun , LIM, Sang Hak , UH, Dong Sun , KIM, Jong Seob , LEE, Jin Kuk , OH, Chang Il , KIM, Min Soo , YOON, Kyong Ho , NAM, Irina
IPC分类号： C08G77/00 , C08G77/02 , C08G77/08 , C08G77/06
CPC分类号： H01L21/31144 , C08G77/20 , G03F7/0752 , G03F7/091 , H01L21/3121
摘要： Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including (a) at least one compound of Formula I Si(OR 1 )(OR 2 )(OR 3 )R 4 (I) wherein R 1 , R 2 and R 3 may each independently be an alkyl group, and R 4 may be -(CH 2 ) n R 5 , wherein R 5 may be an aryl or a substituted aryl, and n may be 0 or a positive integer; and (b) at least one compound of Formula II Si(OR 6 )(OR 7 )(OR 8 )R 9 (II) wherein R 6 , R 7 and R 8 may each independently an alkyl group or an aryl group; and R 9 may be an alkyl group. Also provided are hardmask compositions including an organosilane compound according to an embodiment of the invention, or a hydrolysis product thereof. Methods of producing semiconductor devices using a hardmask compostion according to an embodiment of the invention, and semiconductor devices produced therefrom, are also provided.

8. 发明授权

EP2095188B1 HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS 有权
标题翻译：要处理的HART MASK抗蚀剂组合物下层膜，工艺用于生产集成的半导体组件中使用硬掩模及构成MADE半导体集成电路部件的制造方法
公开(公告)号：EP2095188B1
公开(公告)日：2017-02-22
申请号：EP07834200.3
申请日：2007-11-21
申请人： CHEIL INDUSTRIES INC.
发明人： KIM, Mi Young , KIM, Sang Kyun , LIM, Sang Hak , KOH, Sang Ran , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
IPC分类号： G03F7/004
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122

9. 发明公开

EP2095188A1 HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS 有权
标题翻译：要处理的HART MASK抗蚀剂组合物下层膜，工艺用于生产集成的半导体组件中使用硬掩模及构成MADE半导体集成电路部件的制造方法
公开(公告)号：EP2095188A1
公开(公告)日：2009-09-02
申请号：EP07834200.3
申请日：2007-11-21
申请人： Cheil Industries Inc.
发明人： KIM, Mi Young , KIM, Sang Kyun , LIM, Sang Hak , KOH, Sang Ran , YUN, Hui Chan , KIM, Do Hyeon , UH, Dong Seon , KIM, Jong Seob
IPC分类号： G03F7/004
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122
摘要： A hardmask composition for processing a resist underlayer film is provided. The hardmask composition comprises an organosilane polymer and a solvent or a mixture of solvents wherein the organosilane polymer is prepared in the presence of an acid catalyst by polycondensation of hjdroly sates of compounds represented by Formulae 1, 2 and 3: ([R)1O]3S-X (1) wherein X is a C6-C30 functional group containing at least one substituted or unsubstituted aromatic ring and R1 is a C1-C6 alkyl group; [R2O]3S-R 3 (2) wherein R2 is a C1-C6 alkyl group and R3 is a C1-C12 alkyl group; and [R4O]3S-Y-S[OR 5]3 (3) wherein R4 and R5 are each independently a C1-C6 alkyl group, and Y is a linking group selected from the group consisting of aromatic rings, substituted or unsubstituted, linear or branched C1-C20 alkylene groups, C1-C20 alkylene groups containing an aromatic ring, a heterocyclic ring, an urea group or an isocyanurate group in the backbone and C2-C20 hydrocarbon groups containing at least one multiple bond. The hardmask composition exhibits excellent film characteristics and good storage stability and allows transferring a good pattern to a material layer due to its satisfactory hardmask characteristics. In addition, the hardmask composition has improved etch resistance against O 2 plasma gas upon subsequent etching for patterning. The hardmask composition can be used to form a highly hjdrophilic thin film, thus being effective in improving the interfacial compatibility of the thin film with an overlying antireflective coating. Further provided is a process for producing a semiconductor integrated circuit device using the hardmask composition.

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