专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010052565A3 METHOD FOR MANUFACTURING A SOLAR CELL WITH A TWO-STAGE DOPING 审中-公开
标题翻译：用于制造具有两级放电的太阳能电池的方法
公开(公告)号：WO2010052565A3
公开(公告)日：2012-04-26
申请号：PCT/IB2009007380
申请日：2009-11-09
申请人： CENTROTHERM PHOTOVOLTAICS AG , ESTURO-BRETON AINHOA , GEIGER MATTHIAS , KELLER STEFFEN , SCHLOSSER REINHOLD , VOYER CATHARINE , MAIER JOHANNES , BRESELGE MARTIN , MUENZER ADOLF , FRIESS TOBIAS , KUEHN TINO
发明人： ESTURO-BRETON AINHOA , GEIGER MATTHIAS , KELLER STEFFEN , SCHLOSSER REINHOLD , VOYER CATHARINE , MAIER JOHANNES , BRESELGE MARTIN , MUENZER ADOLF , FRIESS TOBIAS , KUEHN TINO
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： Method for manufacturing a solar cell with a two-stage doping (88, 89) including the following method steps of forming (14, 48) an oxide layer (82), which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate (80), of forming (16; 50) an opening in the oxide layer (82) in at least one high-doping region (88) by removing (16; 50) the oxide layer (82) in this high-doping region (88), of diffusing (28) the first dopant into the at least one high- doping region (88) of the solar cell substrate (80) through the opening and of diffusing (28) the first dopant into the solar cell substrate (80) through the oxide layer (82), wherein the diffusing-in (28) through the openings and through the oxide layer (82) takes place at the same time in a common diffusion step and the solar cell substrate (80) is diffused (28) in the common diffusion step (28) in an at least partially hydrophilic state.
摘要翻译：一种用于制造具有两级掺杂（88,89）的太阳能电池的方法，包括以下方法步骤：在至少一个部分上形成（14,48）可被第一掺杂剂渗透的氧化物层（82）通过去除（16; 50）氧化物层（16; 50）在至少一个高掺杂区域（88）中在氧化物层（82）中形成（16; 50）开口的太阳能电池基板（80）的表面; 82）在该高掺杂区域（88）中通过开口将第一掺杂剂扩散（28）至太阳能电池基板（80）的至少一个高掺杂区域（88）并扩散（28）第一掺杂剂通过氧化物层（82）进入太阳能电池基板（80），其中通过开口和通过氧化物层（82）的扩散（28）在公共扩散步骤中同时进行，并且太阳能电池基板（80）在共同扩散步骤（28）中以至少部分亲水状态扩散（28）。

2. 发明申请

WO2011107092A2 METHOD FOR DOPING A SEMICONDUCTOR SUBSTRATE, AND SOLAR CELL HAVING TWO-STAGE DOPING 审中-公开
标题翻译：方法用于掺杂半导体衬底太阳电池两级掺杂
公开(公告)号：WO2011107092A2
公开(公告)日：2011-09-09
申请号：PCT/DE2011075033
申请日：2011-03-03
申请人： CENTROTHERM PHOTOVOLTAICS AG , TEPPE ANDREAS , GEIGER MATTHIAS , SCHLOSSER REINHOLD , MUENZER ADOLF , SCHOENE JAN , ISENBERG JOERG , KUEHN TINO , KELLER STEFFEN
发明人： TEPPE ANDREAS , GEIGER MATTHIAS , SCHLOSSER REINHOLD , MUENZER ADOLF , SCHOENE JAN , ISENBERG JOERG , KUEHN TINO , KELLER STEFFEN
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/068 , H01L21/02587 , H01L21/02675 , H01L21/268 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for doping a semiconductor substrate (50), wherein the semiconductor substrate (50) is heated by irradiation (14) with laser radiation (60) and at the same time dopant from a dopant source (54) is diffused (16) into the semiconductor substrate (50) in heated regions (52), and wherein when the semiconductor substrate (50) is heated by the irradiation (14) with laser radiation (60), a surface portion of the semiconductor substrate (50) that is less than 10% of the total surface of all irradiated regions (62) is melted (18) and recrystallized (20). The invention further relates to a solar cell.
摘要翻译：（50）扩散的一种用于与激光辐射（60），而在被加热的区域（52）从在所述半导体衬底中的掺杂剂源（54）的掺杂剂掺杂的半导体衬底（50），其中所述半导体衬底（50）是通过照射（14）加热方法（16），并且其中，在所述加热通过辐照（14）利用激光辐射在半导体基板（50）（60）包括一表面的半导体基片的熔融（20）部分（50）（18）和重结晶是小于10％所有暴露的区域的总面积（62），以及太阳能电池。

3. 发明申请

WO2011085715A3 METHOD FOR CREATING A TWO-STAGE DOPING IN A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：方法培训两级掺杂在半导体衬底
公开(公告)号：WO2011085715A3
公开(公告)日：2012-08-16
申请号：PCT/DE2011000013
申请日：2011-01-11
申请人： CENTROTHERM PHOTOVOLTAICS AG , TEPPE ANDREAS , GEIGER MATTHIAS , SCHLOSSER REINHOLD , ISENBERG JOERG , KUEHN TINO , MUENZER ADOLF , KELLER STEFFEN
发明人： TEPPE ANDREAS , GEIGER MATTHIAS , SCHLOSSER REINHOLD , ISENBERG JOERG , KUEHN TINO , MUENZER ADOLF , KELLER STEFFEN
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for creating a two-stage doping in a semiconductor substrate (80), wherein in a doping area (89) to be provided with the two-stage doping (90, 92), dopant is diffused into the semiconductor substrate (80) by means of heavy diffusion (10) and in this way a high surface concentration of dopant is created, and after the heavy diffusion (10) the semiconductor substrate (80) is locally heated (12) in areas (91) of the two-stage doping (90, 92) to be doped more heavily and an oxide layer (88) is created (16) on the doping area (89).
摘要翻译：成由强扩散来提供形成在半导体衬底（80）的两级掺杂，其中，在所述两级掺杂（90，92）中的一个的方法，杂质区（89）（10）在所述半导体衬底（80）的掺杂剂被扩散，并在这时，形成高表面浓度掺杂剂，强扩散（10）之后在两级掺杂（90，92）在半导体衬底（80）的更强烈的掺杂区域（91）被局部加热（12），并且在杂质区域（89）形成氧化物层（88）（16）。

4. 发明申请

WO2012022329A3 METHOD FOR LOCALLY REMOVING A SURFACE LAYER, AND SOLAR CELL 审中-公开
标题翻译：方法表层及太阳能电池的局部切除
公开(公告)号：WO2012022329A3
公开(公告)日：2012-04-19
申请号：PCT/DE2011075152
申请日：2011-06-28
申请人： CENTROTHERM PHOTOVOLTAICS AG , KUEHN TINO , TEPPE ANDREAS , FRIESS TOBIAS , ESTURO-BRETON AINHOA , KELLER STEFFEN
发明人： KUEHN TINO , TEPPE ANDREAS , FRIESS TOBIAS , ESTURO-BRETON AINHOA , KELLER STEFFEN
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/18
CPC分类号： H01L29/34 , H01L21/268 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for locally removing a surface layer (36) which is applied to a texture (30) of a textured substrate, wherein the texture (30) has a multiplicity of structure elements (32) with structure tips (34) and/or structure edges, having the steps of locally irradiating the texture (30) through the surface layer (36) by means of laser radiation which at least partially penetrates through the surface layer (36) and which is at least partially absorbed by the texture (30), the intensity of which laser radiation is set such that the texture (30) is locally melted by means of the laser radiation and subsequently recrystallized (16), wherein the surface layer (36) is locally opened in the region of the structure tips (34) and/or of the structure edges such that the openings around the structure tips (34) and/or the structure edges after the local irradiation of the texture (30) are completely surrounded by continuous, non-open regions of the surface layer (36), and removing (18) the recrystallized regions (38) of the texture (30) in an etching step by means of an etching medium, wherein the surface layer (36) outside the recrystallized regions (38) is used as an etching mask against the etching medium, and to a solar cell (70).
摘要翻译：一种用于局部去除的表面层（36），其被施加到织构的衬底的织构（30）的过程中，织构（30）包括多个结构元件（32），其具有结构顶部（34）和/或具有结构的边缘，其包括以下步骤通过表面层的装置中的纹理（30）通过该表面层（36）的局部照射（36）至少部分地穿透和从纹理（30）至少部分地吸收激光辐射，其强度被设定为使得所述纹理（30）借助于激光辐射局部熔化和下面（16）中重结晶，其特征在于，使得根据纹理（30）的局部照射到尖端的结构中的开口在结构尖端的区域中的表面层（36）（34）和/或结构边缘局部地打开的（34）和/或围绕的表面层的连续的开放区域边缘结构（36）v 其中，从所述再结晶区域的表面层（36）远（38）用作抗蚀刻介质的蚀刻掩模通过蚀刻介质的装置在蚀刻步骤中的纹理（30）的再结晶区域（38）的包围ollständig，并除去（18），和太阳能电池（70）。

5. 发明申请

WO2011107094A2 SOLAR CELL HAVING DIELECTRIC BACK REFLECTIVE COATING AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译： WITH FOR DIELECTRIC背面反射AND METHOD太阳能电池及其
公开(公告)号：WO2011107094A2
公开(公告)日：2011-09-09
申请号：PCT/DE2011075036
申请日：2011-03-03
申请人： CENTROTHERM PHOTOVOLTAICS AG , MUENZER ADOLF , TEPPE ANDREAS , SCHOENE JAN , SCHLOSSER REINHOLD , KELLER STEFFEN
发明人： MUENZER ADOLF , TEPPE ANDREAS , SCHOENE JAN , SCHLOSSER REINHOLD , KELLER STEFFEN
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/0547 , H01L31/02167 , H01L31/022425 , H01L31/056 , H01L31/068 , H01L31/1804 , H01L31/1864 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a solar cell (70), wherein a layer stack (74, 76) of dielectric layers (74, 76) is applied (14, 16; 54, 56) to a back of a solar cell substrate (72) and the layer stack (74, 75) is heated and is held (20) at temperatures of at least 700°C during a time period of at least 5 minutes. The invention further relates to a solar cell (70).
摘要翻译：层堆叠（74;用于制造太阳能电池（70），其特征在于，在太阳能电池基板（72），介电层的层堆叠（74,76）的背面侧（74，76）施加所述的方法（54，56 14，16）加热75）和用于为至少700℃（20）和太阳能电池（70）的温度，持续至少5分钟保持。

6. 发明申请

WO2010052541A3 OXIDATION AND CLEANING PROCESS FOR SILICON WAFERS 审中-公开
标题翻译：硅晶片的氧化和清洗工艺
公开(公告)号：WO2010052541A3
公开(公告)日：2010-10-07
申请号：PCT/IB2009007310
申请日：2009-11-04
申请人： CT THERM PHOTOVOLTAICS TECHNOL , ESTURO-BRETON AINHOA , KELLER STEFFEN
发明人： ESTURO-BRETON AINHOA , KELLER STEFFEN
IPC分类号： H01L21/306 , H01L21/02 , H01L31/18
CPC分类号： H01L21/306 , H01L21/02052
摘要： Oxidation and cleaning process for silicon wafers, in which the silicon wafers are provided with a silicon oxide layer on at least part of their surface (12; 24), before they are etched in an alkaline etching solution (14;, 26) and they are etched in a solution (16) which contains an acid which oxidises metallic impurities, whereby at least a portion of the silicon oxide layer is exposed unprotected to the etching solution and the acid, and in which the silicon wafers are rinsed in deionised water after the etching processes (18), whereby the at least one unprotected portion of the silicon oxide layer is at least partly left on the silicon wafers and the silicon wafers are dried (20) after rinsing (18; 32).
摘要翻译：硅晶片的氧化和清洁过程，其中硅晶片在它们在碱性蚀刻溶液（14; 26）中蚀刻之前在其表面的至少一部分上提供有氧化硅层（12; 24），并且它们在含有氧化金属杂质的酸的溶液（16）中被蚀刻，由此至少一部分氧化硅层未被保护地暴露于蚀刻溶液和酸，并且其中硅晶片在去离子水中被冲洗蚀刻工艺（18），由此氧化硅层的至少一个未受保护部分至少部分地留在硅晶片上，并且在冲洗（18; 32）之后干燥硅晶片（20）。

7. 发明申请

WO2013084050A2 SOLAR CELL HAVING MULTI-STAGE DOPING, AND METHOD FOR PRODUCING SAID SOLAR CELL 审中-公开
标题翻译：具有多级掺杂的太阳能电池及制造所述太阳能电池的方法
公开(公告)号：WO2013084050A2
公开(公告)日：2013-06-13
申请号：PCT/IB2012002604
申请日：2012-12-05
申请人： CENTROTHERM PHOTOVOLTAICS AG
发明人： ESTURO-BRETON AINHOA , FRIESS TOBIAS , KUEHN TINO , MAIER JOHANNES , BRESELGE MARTIN , KELLER STEFFEN , KOPECEK RADOVAN , PETER KRISTIAN
IPC分类号： H01L31/068
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell (50; 70) having a multi-stage doping. (52a, 52b, 52c, 54; 72a, 72b, 72c) formed from a dopant of a first type, which doping comprises more heavily doped regions (52a, 5-2b, 52c; 72a, 72b, 72c) and more lightly doped regions (54) and at least one contact (56), arranged in the more heavily doped regions (52a, 52b, 52c; 72a, 72b, 72c), for electrically contacting the more heavily doped regions (52a, 52b, 52c; 72a, 72b, 72c), wherein the more heavily doped regions (52a, 52b, 52c; 72a, 72b, 72c) are arranged such that they form a predefined structure, and the at least one contact (56) extends at least in sections beyond the more heavily doped regions (52a, 52b, 52c; 72a, 72b, 72c) and covers a part of the more lightly doped' regions (54), and a method for producing said solar cell.
摘要翻译：一种具有多级掺杂的太阳能电池（50; 70）。（52a，5-2b，52c; 72a，72b，72c）以及更轻度掺杂的第一类掺杂剂形成的第一掺杂区（52a，52b，52c，54; 72a，72b，72c）（52a，52b，52c; 72a，72b，72c）中布置的用于电接触较重掺杂区域（52a，52b，52c; 72a）的区域（54）和至少一个触点（52a，52b，52c; 72a，72b，72c）被布置成使得它们形成预定义的结构，并且所述至少一个触点（56）至少部分地延伸超过（52a，52b，52c; 72a，72b，72c）并覆盖部分较轻掺杂的区域（54），以及制造所述太阳能电池的方法。

8. 发明专利

DE102011056039A1 Solarzelle mit einer mehrstufigen Dotierung sowie Verfahren zu deren Herstellung 未知
公开(公告)号：DE102011056039A1
公开(公告)日：2013-06-06
申请号：DE102011056039
申请日：2011-12-05
申请人： CENTROTHERM PHOTOVOLTAICS AG
发明人： ESTURO-BRETON AINHOA , FRIES TOBIAS , KUEHN TINO , MAIER JOHANNES , BRESELGE MARTIN , KELLER STEFFEN , KOPECEK RADOVAN , PETER KRISTIAN
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
摘要： Solarzelle (50; 70) mit einer aus einem Dotierstoff ersten Typs gebildeten mehrstufigen Dotierung (52a, 52b, 52c, 54; 72a, 72b, 72c) welche stärker dotierte Bereiche (52a, 52b, 52c; 72a, 72b, 72c) und schwächer dotierte Bereiche (54) aufweist sowie wenigstens einem in den stärker dotierten Bereichen (52a, 52b, 52c; 72a, 72b, 72c) angeordneten Kontakt (56) zur elektrischen Kontaktierung der stärker dotierten Bereiche (52a, 52b, 52c; 72a, 72b, 72c), wobei die stärker dotierten Bereiche (52a, 52b, 52c; 72a, 72b, 72c) derart angeordnet sind, sodass sie eine vorgegebene Struktur ausbilden und der wenigstens eine Kontakt (56) sich zumindest abschnittsweise über die stärker dotierten Bereiche (52a, 52b, 52c; 72a, 72b, 72c) hinaus erstreckt und einen Teil der schwächer dotierten Bereiche (54) bedeckt, sowie Verfahren zu deren Herstellung.

9. 发明专利

DE19980447D2 未知
公开(公告)号：DE19980447D2
公开(公告)日：2001-04-12
申请号：DE19980447
申请日：1999-03-14
申请人： KELLER STEFFEN , FATH PETER , WILLEKE GERHARD
发明人： KELLER STEFFEN , FATH PETER , WILLEKE GERHARD
IPC分类号： H01L31/04 , H01L20060101 , H01L21/00 , H01L27/142 , H01L31/0224 , H01L31/0352 , H01L31/05 , H01L31/18

10. 发明专利

DE19912980A1 Solar cell device e.g. for satellite, wrist watch, pocket calculator, portable computer, or mobile telephone 未知
公开(公告)号：DE19912980A1
公开(公告)日：1999-12-30
申请号：DE19912980
申请日：1999-03-15
申请人： KELLER STEFFEN , FATH PETER , WILLEKE GERHARD
发明人： KELLER STEFFEN , FATH PETER , WILLEKE GERHARD
IPC分类号： H01L31/04 , H01L20060101 , H01L21/00 , H01L27/142 , H01L31/0224 , H01L31/0352 , H01L31/05 , H01L31/18
摘要： The solar cell device is assembled from a number of solar sub-cells (2) which are connected in series, formed in a semiconductor wafer (1), with slots (14) formed in the latter for defining the individual solar sub-cells, mechanically coupled together by narrow bridging sections (12) at the wafer edge. An Independent claim for manufacture of a solar cell device is also included.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式