专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO0177774A3 METHOD AND DEVICE FOR AUTOMATIC OPTIMAL LOCATION OF AN OPERATION ON AN INTEGRATED CIRCUIT 审中-公开
标题翻译：用于自动最佳定位在一体化电路上的方法和装置
公开(公告)号：WO0177774A3
公开(公告)日：2002-03-21
申请号：PCT/FR0101048
申请日：2001-04-06
申请人： CENTRE NAT ETD SPATIALES , DESPLATS ROMAIN , BENTEO BRUNO
发明人： DESPLATS ROMAIN , BENTEO BRUNO
IPC分类号： G06F17/50 , G01R31/307 , H01L21/66
CPC分类号： G06F17/5068 , H01J2237/31742
摘要： The invention concerns a method and an installation for automatic optimal location of an intervention procedure on a printed circuit which consists in retrieving polygons accessible from topographical description data and data representing a circuit diagram. The method consists in: determining, for each step, different execution options corresponding respectively to each of the different accessible polygons, and calculating and assigning a rating to each execution option on the basis of the depth of each possible initial polygon relative to the surface of intervention, and accessibility parameters of each possible initial polygon, and in automatically determining the execution option to be used to execute each step of the intervention procedure, by digital optimisation calculation using the ratings assigned to the different execution options of each step of the intervention procedure.
摘要翻译：本发明涉及一种用于在印刷电路上自动最佳定位介入程序的方法和装置，其中包括从地形描述数据和表示电路图的数据中检索多边形。该方法包括：为每个步骤确定分别对应于每个不同可访问的多边形的不同执行选项，以及基于每个可能的初始多边形相对于表面的深度来计算和分配给每个执行选项的评级干预和每个可能的初始多边形的可访问性参数，并且在通过使用分配给干预程序的每个步骤的不同执行选项的评级的数字优化计算来自动确定要用于执行干预过程的每个步骤的执行选项。

2. 发明专利

FR2810158B1 未知
公开(公告)号：FR2810158B1
公开(公告)日：2002-08-30
申请号：FR0007400
申请日：2000-06-09
申请人： CENTRE NAT ETD SPATIALES
发明人： DESPLATS ROMAIN , BENTEO BRUNO
IPC分类号： H01L21/48 , H01L23/538 , H01L23/522

3. 发明专利

AT333145T 未知
公开(公告)号：AT333145T
公开(公告)日：2006-08-15
申请号：AT01947499
申请日：2001-06-06
申请人： CENTRE NAT ETD SPATIALES
发明人： DESPLATS ROMAIN , BENTEO BRUNO
IPC分类号： H01L21/48 , H01L23/538

4. 发明专利

FR2807539B1 未知
公开(公告)号：FR2807539B1
公开(公告)日：2002-06-07
申请号：FR0004647
申请日：2000-04-11
申请人： CENTRE NAT ETD SPATIALES
发明人： DESPLATS ROMAIN , BENTEO BRUNO
IPC分类号： G06F17/50 , G01R31/26
摘要： A process and installation for automatic optimal location of a servicing operation on an integrated circuit. The accessible polygons are retrieved on the basis of topographic descriptive data and data representing the electrical circuit. For each step, different execution options are determined, each corresponding to each of the different accessible polygons, and a rating is calculated and assigned to each execution option as a function of the depth of each possible initial polygon with respect to the access surface, and of accessibility parameters of each possible initial polygon, and the optimal execution option to be used for executing each step of the servicing operation is determined automatically by a numerical optimization calculation using the ratings assigned to the different execution options of each step of the servicing operation.

5. 发明专利

FR2807539A1 未知
公开(公告)号：FR2807539A1
公开(公告)日：2001-10-12
申请号：FR0004647
申请日：2000-04-11
申请人： CENTRE NAT ETD SPATIALES
发明人： DESPLATS ROMAIN , BENTEO BRUNO
IPC分类号： G06F17/50 , G01R31/26
摘要： The invention concerns a method and an installation for automatic optimal location of an intervention procedure on a printed circuit which consists in retrieving polygons accessible from topographical description data and data representing a circuit diagram. The method consists in: determining, for each step, different execution options corresponding respectively to each of the different accessible polygons, and calculating and assigning a rating to each execution option on the basis of the depth of each possible initial polygon relative to the surface of intervention, and accessibility parameters of each possible initial polygon, and in automatically determining the execution option to be used to execute each step of the intervention procedure, by digital optimisation calculation using the ratings assigned to the different execution options of each step of the intervention procedure.

6. 发明专利

FR2792455A1 Method and apparatus for correction of integrated circuit by use of focused ion beam system controlled by temporal variation in detected rate of secondary particles emission 未知
公开(公告)号：FR2792455A1
公开(公告)日：2000-10-20
申请号：FR9904805
申请日：1999-04-16
申请人： CENTRE NAT ETD SPATIALES
发明人： BENTEO BRUNO , DESPLATS ROMAIN
IPC分类号： H01L21/18 , H01L21/20 , H01L21/32
摘要： The method and apparatus is for the conduct of deposition or etching in a correction zone of a layer of conducting material in an integrated circuit mounted on a support (3) by use of a focused ion beam (FIB) generated in a column (2) comprising means for the beam scanning. The process includes an application of a sequence of electric signals to the integrated circuit input which produce erroneous and corrected output signal, a detection of thee rate of secondary particles emission in the measurement zone by a photomultiplier (4) connected to the column (2), an evaluation and recording of the measured temporal profile of the rate of secondary particles emission in an interval corresponding to at least a part of the sequence, and a comparison of the measured temporal profile too a reference profile for the control of operation of deposition or etching. The evaluation of the measured profile is carried out by scanning the measurement zone by the focused ion beam in a window corresponding to that zone, the sampling of the detected rate of secondary particles emission, and by carrying out a set of measurements each giving a digital value stored in an acquisition unit (19). The sampling frequency is greater than 1 MHz, and is of an order of 10 MHz. The sampling frequency is not less than the scanning frequency. The direction of the focused ion beam is substantially perpendicular to the direction of propagation of electric signals in the measurement track, and the scanning window has a width which is less than that of the measurement track. The control includes a possibility of periodical switching of two configurations of the focused ion beam, the first corresponding to the operation of deposition of the operation. The minimum energy of the beam is of an order of 3 keV. The etching operation for cutting a track includes a selection of two measurement zones on opposite sides of the etching zone, and a use of the second measured profile as a reference profile. The etching operation for cutting a track can include a selection of the first measurement zone on the etching zone, and use of the measured profile obtained before the start of etching operation as a reference profile. The deposition operation for connecting two conducting zones includes a selection of first and second measurement zones, and a use of the second measured profile as a reference profile. The process can comprise a preliminary stage of exposition of a conducting zone by etching a dielectric material, and includes an application of a sequence of electric signals producing a predetermined output profile, the detection of the rate of secondary particles emission above the etching zone, the evaluation and storage of measured temporal variations, the comparison of measured to predetermined profiles, and interrupting the operation when the two profiles become similar. The apparatus comprises the means (1) for the generation of the focused ion beam and its application to the surface of the integrated circuit, the means (4) for the detection of the rate of secondary particles emission, the means (9,10) for electric stimulation of integrated circuit by the application of the sequence of electric signals, and the means (19) for the evaluation and storage of measured profiles of the rate of secondary particles emission.

7. 发明专利

DE60121442D1 未知
公开(公告)号：DE60121442D1
公开(公告)日：2006-08-24
申请号：DE60121442
申请日：2001-06-06
申请人： CENTRE NAT ETD SPATIALES
发明人： DESPLATS ROMAIN , BENTEO BRUNO
IPC分类号： H01L23/538 , H01L21/48

8. 发明专利

FR2792077B1 未知
公开(公告)号：FR2792077B1
公开(公告)日：2001-06-29
申请号：FR9904479
申请日：1999-04-09
申请人： CENTRE NAT ETD SPATIALES
发明人： DEPLATS ROMAIN , BENTEO BRUNO
IPC分类号： G01N21/88 , G01N21/956 , G01R31/311 , G02B21/00 , G01R31/26 , H01J37/28 , G01M11/00 , H01L21/00
摘要： The installation for microscopic observation of a semiconductor electronic circuit includes, in a vacuum, a reflection particle interaction microscope and parts for supporting the circuit facing the reflection particle interaction microscope. The installation further includes a reflection optical microscope including optical observation part and elements for illuminating the circuit to be observed, with the illumination elements and the optical observation part on the same side of the circuit and the reflection optical microscope and the reflection particle interaction microscope disposed face-to-face on a common observation axis on respective opposite sides of the circuit.

9. 发明专利

FR2810158A1 Reversal of circuit board inputs and outputs uses additional short conductive strip deposits, and cutting of existing tracks at set points 未知
公开(公告)号：FR2810158A1
公开(公告)日：2001-12-14
申请号：FR0007400
申请日：2000-06-09
申请人： CENTRE NAT ETD SPATIALES
发明人： DESPLATS ROMAIN , BENTEO BRUNO
IPC分类号： H01L21/48 , H01L23/538 , H01L23/522
摘要： A bend (3) is located on a deflected branch (2) of one strip, and a conductive deposit (5) is formed, perpendicular from this bend between the two parallel branches (1,2) of the strip system. An inclined deposit (9) is formed between the perpendicular branch (4) and the parallel branch (1), with breaks (7,8) so as to swap the inputs (EA, EB) and the outputs (SA, SB). The method for producing permutations of inputs and outputs on an integrated circuit includes identifying amongst several parallel branches of conductive strips those which are to be subject to input/output swapping. A bend (3) is located on a deflected branch (2) of one strip, and a conductive deposit (5) is formed, perpendicular from this bend between the two parallel branches (1,2) of the strip system. An inclined deposit (9) is formed between the perpendicular branch (4) and the parallel branch (1), with breaks (7,8) so as to swap the inputs (EA, EB) and the outputs (SA, SB).

10. 发明专利

FR2792077A1 Apparatus for observing silicon plate with semiconductor circuits has two microscopes placed on either side of housing, microscope having camera and light source and being linked to computer 未知
公开(公告)号：FR2792077A1
公开(公告)日：2000-10-13
申请号：FR9904479
申请日：1999-04-09
申请人： CENTRE NAT ETD SPATIALES
发明人： DEPLATS ROMAIN , BENTEO BRUNO
IPC分类号： G01N21/88 , G01N21/956 , G01R31/311 , G02B21/00 , G01R31/26 , H01J37/28 , G01M11/00 , H01L21/00
摘要： Apparatus comprises observation housing (12) with microscopes (14, 16) placed on either side. Housing and microscopes are placed on frame (22). Displacement means (24) ensure displacement of specimen (18) perpendicularly to mutual axis of microscopes. Microscope (14) has camera (30) and light source (32), both placed on same side of specimen. Microscope (14) is linked to computer. An Independent claim is also included for the observation method.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式