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    • 7. 发明申请
    • NEAR FIELD EXPOSURE MASK, METHOD OF FORMING RESIST PATTERN USING THE MASK, AND METHOD OF PRODUCING DEVICE
    • 近场曝光掩模,使用掩模形成电阻图案的方法,以及制造装置的方法
    • WO2008047733A1
    • 2008-04-24
    • PCT/JP2007/070015
    • 2007-10-05
    • CANON KABUSHIKI KAISHAITO, ToshikiMIZUTANI, NatsuhikoTERAO, Akira
    • ITO, ToshikiMIZUTANI, NatsuhikoTERAO, Akira
    • G03F1/14G03F7/20
    • G03F7/2014B82Y10/00G03F1/50G03F7/70325
    • Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix 10; a light shielding layer 12 @formed above the transparent mask matrix 10 and containing silicon; a reflective layer 11 formed between the transparent mask matrix 10 and the light shielding layer 12; and an opening pattern provided in the reflective layer 11 and the light shielding layer 12 and being less in size than an exposure wavelength É (nm), wherein the reflectance at an interface between the transparent mask matrix 10 and the reflective layer 11 is higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.
    • 提供一种能够抑制曝光时的掩模的发热的近场曝光掩模,并且还可以抑制每个镜头的抗蚀剂图案的尺寸的变化,以及使用其的抗蚀剂图案形成方法。 近场曝光掩模包括透明掩模矩阵10; 形成在透明掩模矩阵10上方并含有硅的遮光层12; 形成在透明掩模矩阵10和遮光层12之间的反射层11; 以及设置在反射层11和遮光层12中并且尺寸小于曝光波长É(nm)的开口图案,其中透明掩模矩阵10和反射层11之间的界面处的反射率高于 在透明掩模矩阵和形成在透明掩模矩阵上的遮光层之间的界面处的反射率,并且包含在透明掩模矩阵和遮光层之间没有反射层的近场曝光掩模的硅。
    • 8. 发明申请
    • NEAR-FIELD EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD USING THE SAME
    • 近场曝光方法及使用其的装置制造方法
    • WO2006004177A1
    • 2006-01-12
    • PCT/JP2005/012528
    • 2005-06-30
    • CANON KABUSHIKI KAISHAMIZUTANI, NatsuhikoKURODA, Ryo
    • MIZUTANI, NatsuhikoKURODA, Ryo
    • H01L21/027
    • G03F7/7035B82Y10/00G03F7/70325
    • Disclosed is a near-field exposure method including a process of bringing a light blocking film with a plurality of small openings each having an opening width not greater than a wavelength of exposure light, into close contact with a photoresist layer provided on a surface of a substrate, and a process of projecting exposure light from an exposure light source to the light blocking film to transfer an opening pattern of the light blocking film to the photoresist layer, wherein, on the basis of a correlation between (a) a distance from a node of a standing wave to be produced in the photoresist layer to the light blocking film and (b) a light intensity distribution of near-field light to be produced in the photoresist layer adjacent the light blocking film, the distance from the standing wave node to the light blocking film is determined so as to provide a desired light intensity distribution.
    • 公开了一种近场曝光方法,包括使具有不大于曝光光的波长的开口宽度的多个小开口的遮光膜与设置在曝光光的表面上的光致抗蚀剂层紧密接触的工艺 以及将曝光光源的曝光光投射到遮光膜以将遮光膜的开口图案转印到光致抗蚀剂层的处理,其中,基于(a)距离 在光致抗蚀剂层中产生的阻挡膜的驻波的节点和(b)在与阻光膜相邻的光致抗蚀剂层中要产生的近场光的光强度分布,与驻波结点的距离 确定遮光膜以提供期望的光强度分布。
    • 9. 发明申请
    • NEAR-FIELD EXPOSURE METHOD AND APPARATUS, NEAR-FIELD EXPOSURE MASK, AND DEVICE MANUFACTURING METHOD
    • 近场曝光方法和装置,近场曝光掩模和装置制造方法
    • WO2005015311A2
    • 2005-02-17
    • PCT/JP2004/011648
    • 2004-08-06
    • CANON KABUSHIKI KAISHAMIZUTANI, Natsuhiko
    • MIZUTANI, Natsuhiko
    • G03F7/00
    • G03F7/7035B82Y10/00G03F1/50G03F7/703G03F7/70325
    • Disclosed is a near-field exposure method and apparatus, a near-field exposure mask, and a device manufacturing method, wherein exposure is carried out on the basis of near field light. Specifically, the near-field exposure method disclosed is arranged so that a pressure difference is applied to between a front face and a rear face of an elastically deformable exposure mask to cause deformation of the exposure mask in accordance with a substrate to be exposed and to cause the exposure mask surface to follow a surface irregularity state of the substrate such that these surfaces are closely contacted to each other, for exposure based on near field light. The pressure difference applied to between the front and rear faces of the exposure mask is set at a predetermnined pressure difference corresponding to surface roughness of the substrate to be exposed.
    • 公开了近场曝光方法和装置,近场曝光掩模和装置制造方法,其中基于近场光进行曝光。 具体地说,所公开的近场曝光方法被布置成在可弹性变形的曝光掩模的正面和背面之间施加压力差,以使曝光掩模根据待曝光的基板而变形,并且 使得曝光掩模表面遵循基板的表面不规则状态,使得这些表面彼此紧密接触,用于基于近场光的曝光。 施加到曝光掩模的前表面和后表面之间的压力差设定为对应于待曝光的基板的表面粗糙度的预定压差。